Vishay Siliconix IRFIBE30GPBF

Name: IRFIBE30GPBF
Brand: Vishay Siliconix
SKU: 2482957-IRFIBE30GPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFIBE30GPBF

Manufacturer:: Vishay Siliconix

Ventron No:: 2482957-IRFIBE30GPBF

Description:: MOSFET N-CH 800V 2.1A TO220FP

ECAD Model:

Datasheet:: IRFIBE30GPBF

Specifications

Vishay Siliconix IRFIBE30GPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFIBE30GPBF.

Factory Lead Time
8 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Isolated Tab
Number of Pins
3
Supplier Device Package
TO-220-3
Weight
6.000006g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
3Ohm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
35W Tc
Element Configuration
Single
Power Dissipation
35W
Turn On Delay Time
12 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
3Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C
2.1A Tc
Gate Charge (Qg) (Max) @ Vgs
78nC @ 10V
Rise Time
33ns
Drain to Source Voltage (Vdss)
800V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
30 ns
Turn-Off Delay Time
82 ns
Continuous Drain Current (ID)
2.1A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
800V
Input Capacitance
1.3nF
Drain to Source Resistance
3Ohm
Rds On Max
3 Ω
Height
9.8mm
Length
10.63mm
Width
4.83mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRFIBE30GPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1300pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 800V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 800V.As a result of its turn-off delay time, which is 82 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 3Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 12 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.The transistor must receive a 800V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFIBE30GPBF Features
a continuous drain current (ID) of 2.1A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 82 ns
single MOSFETs transistor is 3Ohm
a threshold voltage of 4V
a 800V drain to source voltage (Vdss)

IRFIBE30GPBF Applications
There are a lot of Vishay Siliconix
IRFIBE30GPBF applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

IRFIBE30GPBF More Descriptions

Single N-Channel 800 V 3 Ohms Flange Mount Power Mosfet - TO-220FP
Trans MOSFET N-CH 800V 2.1A 3-Pin(3 Tab) TO-220 Full-Pak
VISHAY IRFIBE30GPBF Power MOSFET, N Channel, 2.1 A, 800 V, 3 ohm, 10 V, 4 V
800V 2.1A 35W 3´Î@10V1.3A 4V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
Transistor Polarity:n Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:2.1A; On Resistance Rds(On):3Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pins Rohs Compliant: No
Power Field-Effect Transistor, 2.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to IRFIBE30GPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Resistance

Max Operating Temperature

Min Operating Temperature

Technology

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Transistor Element Material

Series

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Operating Mode

Case Connection

Transistor Application

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Voltage - Rated DC

Current Rating

View Compare
IRFIBE30GPBF

Vishay Siliconix

8 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack, Isolated Tab

3

TO-220-3

6.000006g

-55°C~150°C TJ

Tube

2014

Active

1 (Unlimited)

3Ohm

150°C

-55°C

MOSFET (Metal Oxide)

1

1

35W Tc

Single

35W

12 ns

N-Channel

3Ohm @ 1.3A, 10V

4V @ 250μA

1300pF @ 25V

2.1A Tc

78nC @ 10V

33ns

800V

10V

±20V

30 ns

82 ns

2.1A

4V

20V

800V

1.3nF

3Ohm

3 Ω

9.8mm

10.63mm

4.83mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFI9540G

Vishay Siliconix

-

Through Hole

Through Hole

TO-220-3 Full Pack, Isolated Tab

3

TO-220-3

6.000006g

-55°C~175°C TJ

Tube

2014

Obsolete

1 (Unlimited)

200MOhm

175°C

-55°C

MOSFET (Metal Oxide)

-

1

48W Tc

Single

-

24 ns

P-Channel

200mOhm @ 6.6A, 10V

4V @ 250μA

1400pF @ 25V

11A Tc

61nC @ 10V

110ns

100V

10V

±20V

86 ns

51 ns

11A

-

20V

-

1.4nF

200mOhm

200 mΩ

9.8mm

10.63mm

4.83mm

-

No

Non-RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFIBE30GPBF vs IRFI9540G
IRFI4905

Infineon Technologies

-

-

Through Hole

TO-220-3 Full Pack

-

-

-

-

Tube

1997

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

1

-

63W Tc

-

-

-

P-Channel

20m Ω @ 22A, 10V

4V @ 250μA

3400pF @ 25V

41A Tc

180nC @ 10V

-

55V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

NO

SILICON

HEXFET®

e3

3

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

ISOLATED

SWITCHING

TO-220AB

41A

0.02Ohm

260A

55V

930 mJ

-

-

IRFIBE30GPBF vs IRFI4905
IRFI630G

Vishay Siliconix

-

Through Hole

Through Hole

TO-220-3 Full Pack, Isolated Tab

3

TO-220-3

6.000006g

-55°C~150°C TJ

Tube

2016

Obsolete

1 (Unlimited)

-

150°C

-55°C

MOSFET (Metal Oxide)

-

1

35W Tc

Single

32W

9.4 ns

N-Channel

400mOhm @ 3.5A, 10V

4V @ 250μA

800pF @ 25V

5.9A Tc

43nC @ 10V

28ns

200V

10V

±20V

20 ns

39 ns

5.9A

-

20V

200V

800pF

400mOhm

400 mΩ

9.8mm

10.63mm

4.83mm

-

No

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

250V

5.9A

IRFIBE30GPBF vs IRFI630G

Certification

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IRFIBE30GPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFIBE30GPBF DISTI #V99:2348_09218817	Vishay Intertechnologies	Trans MOSFET N-CH 800V 2.1A 3-Pin(3 Tab) TO-220FP RoHS: Compliant	939	1 $2.9617 10 $2.3821 50 $2.2828 100 $1.9515 500 $1.5746 2500 $1.2419 5000 $1.2266
IRFIBE30GPBF DISTI #V36:1790_09218817	Vishay Intertechnologies	Trans MOSFET N-CH 800V 2.1A 3-Pin(3 Tab) TO-220FP RoHS: Compliant	448	1 $2.9617 10 $2.3821 50 $2.2828 100 $1.9515 500 $1.5746 2500 $1.2419 5000 $1.2266
IRFIBE30GPBF DISTI #IRFIBE30GPBF-ND	Vishay Siliconix	MOSFET N-CH 800V 2.1A TO220FP RoHS: Compliant	3413	1 $2.72 10 $2.442 50 $2.3042 100 $1.9632 500 $1.61296 2500 $1.24428 5000 $1.1982
IRFIBE30GPBF DISTI #32383217	Vishay Intertechnologies	Trans MOSFET N-CH 800V 2.1A 3-Pin(3 Tab) TO-220FP RoHS: Compliant	5317	13 $0.8066
IRFIBE30GPBF DISTI #25872738	Vishay Intertechnologies	Trans MOSFET N-CH 800V 2.1A 3-Pin(3 Tab) TO-220FP RoHS: Compliant	939	6 $2.9617
IRFIBE30GPBF DISTI #31395880	Vishay Intertechnologies	Trans MOSFET N-CH 800V 2.1A 3-Pin(3 Tab) TO-220FP RoHS: Compliant	448	6 $2.9617
IRFIBE30GPBF DISTI #IRFIBE30GPBF	Vishay Intertechnologies	Trans MOSFET N-CH 800V 2.1A 3-Pin(3 Tab) TO-220 Fu RoHS: Not Compliant	230	1000 $1.21951 2000 $1.18333 3000 $1.13523 5000 $1.10382 10000 $1.0741
IRFIBE30GPBF DISTI #IRFIBE30GPBF	Vishay Intertechnologies	Trans MOSFET N-CH 800V 2.1A 3-Pin(3 Tab) TO-220 Fu RoHS: Compliant	550	1 $1.5999 10 $1.1207 25 $0.9239 50 $0.8209 100 $0.8079 500 $0.7969 1000 $0.7759
IRFIBE30GPBF DISTI #IRFIBE30GPBF	Vishay Intertechnologies	Transistor MOSFET N-CH 800V 2.1A 3-Pin TO-220 FP ( RoHS: Compliant	0
IRFIBE30GPBF. DISTI #27AC6782	Vishay Intertechnologies	Transistor Polarity:N Channel, Continuous Drain C	230	1 $1.26 2000 $1.22 3000 $1.17 5000 $1.14 10000 $1.11
IRFIBE30GPBF DISTI #	Vishay Intertechnologies	Single N-Channel 800 V 3 Ohms Flange Mount Power M RoHS: Compliant	450	25 $2.29 100 $1.45 250 $1.33 500 $1.24 1000 $1.16
IRFIBE30GPBF DISTI #844-IRFIBE30GPBF	Vishay Intertechnologies	MOSFET N-CH 800V HEXFET MOSFET RoHS: Compliant	619	1 $2.98 10 $2.41 100 $2.17 500 $1.68 1000 $1.4
IRFIBE30G DISTI #844-IRFIBE30G	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 844-IRFIBE30GPBF RoHS: Not Compliant	0
IRFIBE30GPBF DISTI #	Vishay Siliconix		10
IRFIBE30GPBF DISTI #1808330	Vishay Intertechnologies	N CHANNEL , VBRDSS 800 V, RDSON 3000 MO, TU	895	50 $1.64 100 $1.27 500 $1.11 1000 $0.926 2500 $0.862
IRFIBE30GPBF DISTI #	Vishay Intertechnologies	RoHS: Compliant	2500
IRFIBE30GPBF DISTI #1013501	Vishay Intertechnologies	MOSFET, N, TO-220FP RoHS: Compliant	56	1 $4.1 10 $3.68 50 $3.48 100 $2.96 500 $2.44 2500 $1.88 5000 $1.86
IRFIBE30GPBF DISTI #1013501	Vishay Intertechnologies	MOSFET, N, TO-220FP	977	1 $2.59 10 $1.85 100 $1.68 250 $1.49 500 $1.29
IRFIBE30GPBF DISTI #XSFP00000007131	Vishay Siliconix	RoHS: Compliant	350	100 $2.07 350 $1.93
IRFIBE30GPBF DISTI #	Vishay Intertechnologies	MOSFET N-CH 800V HEXFET MOSFET RoHS: Compliant	300	50 $1.53 100 $1.35 250 $1.23 500 $1.2 1000 $1.14

IRFIBE3~~(4)~~
IRFIBE~~(7)~~
IRFIB~~(47)~~
IRFI~~(60)~~
IRF~~(69)~~

Vishay Siliconix IRFIBE30GPBF

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