Vishay Siliconix IRFIB7N50APBF

Name: IRFIB7N50APBF
Brand: Vishay Siliconix
SKU: 2848842-IRFIB7N50APBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFIB7N50APBF

Manufacturer:: Vishay Siliconix

Ventron No:: 2848842-IRFIB7N50APBF

Description:: MOSFET N-CH 500V 6.6A TO220FP

ECAD Model:

Datasheet:: IRFIB7N50APBF

Specifications

Vishay Siliconix IRFIB7N50APBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFIB7N50APBF.

Factory Lead Time
8 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Isolated Tab
Number of Pins
3
Supplier Device Package
TO-220-3
Weight
6.000006g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2008
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
520MOhm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
500V
Technology
MOSFET (Metal Oxide)
Current Rating
6.6A
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
60W Tc
Element Configuration
Single
Power Dissipation
60W
Turn On Delay Time
14 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
520mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1423pF @ 25V
Current - Continuous Drain (Id) @ 25°C
6.6A Tc
Gate Charge (Qg) (Max) @ Vgs
52nC @ 10V
Rise Time
35ns
Drain to Source Voltage (Vdss)
500V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
28 ns
Turn-Off Delay Time
32 ns
Continuous Drain Current (ID)
6.6A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
500V
Input Capacitance
1.423nF
Drain to Source Resistance
520mOhm
Rds On Max
520 mΩ
Height
9.8mm
Length
10.63mm
Width
4.83mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRFIB7N50APBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1423pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 32 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 520mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFIB7N50APBF Features
a continuous drain current (ID) of 6.6A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 32 ns
single MOSFETs transistor is 520mOhm
a threshold voltage of 4V
a 500V drain to source voltage (Vdss)

IRFIB7N50APBF Applications
There are a lot of Vishay Siliconix
IRFIB7N50APBF applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

IRFIB7N50APBF More Descriptions

Single N-Channel 500 V 520 mOhms Flange Mount Power Mosfet - TO-220FP
Trans MOSFET N-CH 500V 6.6A 3-Pin(3 Tab) TO-220 Full-Pak
Power Field-Effect Transistor, 6.6A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N CH MOSFET, 500V, 6.6A, TO-220FP; Trans; N CH MOSFET, 500V, 6.6A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:6.6A; Drain Source Voltage Vds:500V; On Resistance Rds(on):520mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V
MOSFET, N, 500V, 6.6A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.6A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.52ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 60W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Junction to Case Thermal Resistance A: 2.1°C/W; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: 44A; Termination Type: Through Hole; Voltage Vds: 500V; Voltage Vds Typ: 500V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V

Product Comparison

The three parts on the right have similar specifications to IRFIB7N50APBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Resistance

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Transistor Element Material

Series

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Operating Mode

Case Connection

Transistor Application

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

View Compare
IRFIB7N50APBF

Vishay Siliconix

8 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack, Isolated Tab

3

TO-220-3

6.000006g

-55°C~150°C TJ

Tube

2008

Active

1 (Unlimited)

520MOhm

150°C

-55°C

500V

MOSFET (Metal Oxide)

6.6A

1

1

60W Tc

Single

60W

14 ns

N-Channel

520mOhm @ 4A, 10V

4V @ 250μA

1423pF @ 25V

6.6A Tc

52nC @ 10V

35ns

500V

10V

±30V

28 ns

32 ns

6.6A

4V

30V

500V

1.423nF

520mOhm

520 mΩ

9.8mm

10.63mm

4.83mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFI840GLC

Vishay Siliconix

-

Through Hole

Through Hole

TO-220-3 Full Pack, Isolated Tab

3

TO-220-3

6.000006g

-55°C~150°C TJ

Tube

2016

Obsolete

1 (Unlimited)

-

150°C

-55°C

-

MOSFET (Metal Oxide)

-

1

1

40W Tc

Single

40W

12 ns

N-Channel

850mOhm @ 2.7A, 10V

4V @ 250μA

1100pF @ 25V

4.5A Tc

39nC @ 10V

25ns

500V

10V

±30V

19 ns

27 ns

4.5A

-

30V

-

1.1nF

850mOhm

850 mΩ

9.8mm

10.63mm

4.83mm

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFIB7N50APBF vs IRFI840GLC
IRFI4905

Infineon Technologies

-

-

Through Hole

TO-220-3 Full Pack

-

-

-

-

Tube

1997

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

1

-

63W Tc

-

-

-

P-Channel

20m Ω @ 22A, 10V

4V @ 250μA

3400pF @ 25V

41A Tc

180nC @ 10V

-

55V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

NO

SILICON

HEXFET®

e3

3

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

ISOLATED

SWITCHING

TO-220AB

41A

0.02Ohm

260A

55V

930 mJ

IRFIB7N50APBF vs IRFI4905
IRFI9530G

Vishay Siliconix

-

Through Hole

Through Hole

TO-220-3 Full Pack, Isolated Tab

3

TO-220-3

6.000006g

-55°C~175°C TJ

Tube

2016

Obsolete

1 (Unlimited)

-

175°C

-55°C

-

MOSFET (Metal Oxide)

-

1

1

42W Tc

Single

42W

12 ns

P-Channel

300mOhm @ 4.6A, 10V

4V @ 250μA

860pF @ 25V

7.7A Tc

38nC @ 10V

52ns

100V

10V

±20V

39 ns

31 ns

7.7A

-

20V

-100V

860pF

300mOhm

300 mΩ

9.8mm

10.63mm

4.83mm

-

No

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFIB7N50APBF vs IRFI9530G

Certification

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IRFIB7N50APBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFIB7N50APBF DISTI #IRFIB7N50APBF	Vishay Intertechnologies	Trans MOSFET N-CH 500V 6.6A 3-Pin(3 Tab) TO-220FP RoHS: Compliant	940	1 $2.3017 10 $1.9771 100 $1.5984 500 $1.421 1000 $1.2014 2500 $1.0812 5000 $1.046
IRFIB7N50APBF DISTI #IRFIB7N50APBF	Vishay Siliconix	MOSFET N-CH 500V 6.6A TO220FP RoHS: Compliant	401	1 $3.18 10 $2.868 100 $2.3045
IRFIB7N50APBF DISTI #IRFIB7N50APBF	Vishay Intertechnologies	Trans MOSFET N-CH 500V 6.6A 3-Pin(3 Tab) TO-220FP RoHS: Compliant	940	6 $2.3017 10 $1.9771 100 $1.5984 500 $1.421
IRFIB7N50APBF DISTI #IRFIB7N50APBF	Vishay Intertechnologies	Trans MOSFET N-CH 500V 6.6A 3-Pin(3 Tab) TO-220 Fu RoHS: Compliant	100	1 $2.29 10 $1.89 25 $1.89 50 $1.89 100 $1.49 500 $1.29 1000 $1.09
IRFIB7N50APBF DISTI #IRFIB7N50APBF	Vishay Intertechnologies	Trans MOSFET N-CH 500V 6.6A 3-Pin(3 Tab) TO-220 Fu RoHS: Not Compliant	0	1000 $1.2349 2000 $1.1989 4000 $1.1499 6000 $1.1179 10000 $1.0879
IRFIB7N50APBF DISTI #IRFIB7N50APBF	Vishay Intertechnologies	N CHANNEL MOSFET, 500V, 6.6A, TO-220FP, Transisto	0	1 $2.78 10 $2.31 25 $2.14 50 $1.97 100 $1.85 500 $1.77 1000 $1.69 2500 $1.66
IRFIB7N50APBF DISTI #IRFIB7N50APBF	Vishay Intertechnologies	MOSFET, Power, N-Ch, VDSS 500V, RDS(ON) 0.52Oh RoHS: Compliant	0	1000 $2.83
IRFIB7N50APBF DISTI #IRFIB7N50APBF	Vishay Intertechnologies	MOSFET N-Chan 500V 6.6 Amp RoHS: Compliant	984	1 $2.78 10 $2.31 100 $1.79 500 $1.57 1000 $1.3 2500 $1.21 5000 $1.17
IRFIB7N50A DISTI #IRFIB7N50A	Vishay Intertechnologies	MOSFET N-Chan 500V 6.6 Amp RoHS: Not Compliant	0
IRFIB7N50APBF DISTI #IRFIB7N50APBF	Vishay Intertechnologies	Single N-Channel 500 V 520 mOhms Flange Mount Powe RoHS: Compliant	750	50 $1.84 200 $1.66 400 $1.61
IRFIB7N50APBF DISTI #IRFIB7N50APBF	Vishay Intertechnologies	MOSFET N-CHANNEL 500V 6.6A TO220FP, EA	102	1 $2.26 25 $1.42 100 $1.16 250 $1.09 500 $1.01
IRFIB7N50APBF DISTI #IRFIB7N50APBF	Vishay Intertechnologies	MOSFET N-CHANNEL 500V 6.6A TO220FP, TA	828	25 $1.42 100 $1.16 250 $1.09 500 $1.01
IRFIB7N50APBF DISTI #IRFIB7N50APBF	Vishay Intertechnologies	RoHS: Compliant	150
IRFIB7N50APBF DISTI #IRFIB7N50APBF	Vishay Intertechnologies	N-Ch 500V 6,6A 60W 0,52R TO220-Fullpak RoHS: Compliant	275	25 $0.786 100 $0.706 300 $0.666 500 $0.6415
IRFIB7N50APBF DISTI #IRFIB7N50APBF	Vishay Intertechnologies	N CHANNEL MOSFET, 500V, 6.6A, TO-220FP RoHS: Compliant	0	1000 $5.73 2500 $4.99
IRFIB7N50APBF. DISTI #IRFIB7N50APBF.	Vishay Intertechnologies	RoHS: Compliant	0	1 $4.4 10 $3.66 100 $2.84 500 $2.49 1000 $2.06 2500 $1.92 5000 $1.85 10000 $1.78
IRFIB7N50APBF DISTI #IRFIB7N50APBF	Vishay Intertechnologies	Trans MOSFET N-CH 500V 6.6A 3-Pin(3 Tab) TO-220FP RoHS: Compliant	940	1 $2.2857 10 $1.9814 100 $1.593 500 $1.4553
IRFIB7N50APBF DISTI #IRFIB7N50APBF	Vishay Intertechnologies	MOSFET N-Chan 500V 6.6 Amp RoHS: Compliant	0
IRFIB7N50APBF DISTI #IRFIB7N50APBF	Vishay Intertechnologies	N CHANNEL MOSFET, 500V, 6.6A, TO-220FP RoHS: Compliant	0	1000 $1.93 3000 $1.6

IRFIB7N~~(5)~~
IRFIB7~~(5)~~
IRFIB~~(47)~~
IRFI~~(60)~~
IRF~~(69)~~

Vishay Siliconix IRFIB7N50APBF

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