Vishay Siliconix IRFI840G
- Part Number:
- IRFI840G
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2488447-IRFI840G
- Description:
- MOSFET N-CH 500V 4.6A TO220FP
- Datasheet:
- IRFI840G
Vishay Siliconix IRFI840G technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFI840G.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack, Isolated Tab
- Number of Pins3
- Supplier Device PackageTO-220-3
- Weight6.000006g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max40W Tc
- Element ConfigurationSingle
- Power Dissipation40W
- Turn On Delay Time14 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs850mOhm @ 2.8A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1300pF @ 25V
- Current - Continuous Drain (Id) @ 25°C4.6A Tc
- Gate Charge (Qg) (Max) @ Vgs67nC @ 10V
- Rise Time22ns
- Drain to Source Voltage (Vdss)500V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)21 ns
- Turn-Off Delay Time55 ns
- Continuous Drain Current (ID)4.6A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage500V
- Input Capacitance1.3nF
- Drain to Source Resistance850mOhm
- Rds On Max850 mΩ
- Height9.8mm
- Length10.63mm
- Width4.83mm
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
IRFI840G Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 4.6A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 55 ns.This device has a drain-to-source resistance of 850mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFI840G Features
a continuous drain current (ID) of 4.6A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 55 ns
single MOSFETs transistor is 850mOhm
a 500V drain to source voltage (Vdss)
IRFI840G Applications
There are a lot of Vishay Siliconix
IRFI840G applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 4.6A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 55 ns.This device has a drain-to-source resistance of 850mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFI840G Features
a continuous drain current (ID) of 4.6A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 55 ns
single MOSFETs transistor is 850mOhm
a 500V drain to source voltage (Vdss)
IRFI840G Applications
There are a lot of Vishay Siliconix
IRFI840G applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRFI840G More Descriptions
Trans MOSFET N-CH 500V 4.6A 3-Pin (3 Tab) TO-220 Full-Pak
IRFI840G,500V 4.6A SINGLE N-C HANNEL HEXFET POWER MOSFET IN
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=4.6A)
French Electronic Distributor since 1988
IRFI840G,500V 4.6A SINGLE N-C HANNEL HEXFET POWER MOSFET IN
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=4.6A)
French Electronic Distributor since 1988
The three parts on the right have similar specifications to IRFI840G.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusVoltage - Rated DCCurrent RatingLead FreeView Compare
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IRFI840GThrough HoleThrough HoleTO-220-3 Full Pack, Isolated Tab3TO-220-36.000006g-55°C~150°C TJTube2016Obsolete1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)1140W TcSingle40W14 nsN-Channel850mOhm @ 2.8A, 10V4V @ 250μA1300pF @ 25V4.6A Tc67nC @ 10V22ns500V10V±20V21 ns55 ns4.6A20V500V1.3nF850mOhm850 mΩ9.8mm10.63mm4.83mmNoNon-RoHS Compliant----
-
Through HoleThrough HoleTO-220-3 Full Pack, Isolated Tab3TO-220-36.000006g-55°C~175°C TJTube2009Obsolete1 (Unlimited)175°C-55°CMOSFET (Metal Oxide)-127W TcSingle-11 nsP-Channel500mOhm @ 3.2A, 10V4V @ 250μA270pF @ 25V5.3A Tc12nC @ 10V63ns60V10V±20V31 ns9.6 ns5.3A20V-270pF500mOhm500 mΩ9.8mm10.63mm4.83mmNoNon-RoHS Compliant---
-
Through HoleThrough HoleTO-220-3 Full Pack, Isolated Tab3TO-220-36.000006g-55°C~150°C TJTube2016Obsolete1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)-123W TcSingle-7 nsN-Channel2Ohm @ 1.3A, 10V4V @ 250μA140pF @ 25V2.1A Tc8.2nC @ 10V7.6ns250V10V±20V7 ns16 ns2.1A20V-140pF2Ohm2 Ω9.8mm10.63mm4.83mmNoNon-RoHS Compliant250V2.1AContains Lead
-
Through HoleThrough HoleTO-220-3 Full Pack, Isolated Tab3TO-220-36.000006g-55°C~175°C TJTube2017Obsolete1 (Unlimited)175°C-55°CMOSFET (Metal Oxide)1142W TcSingle42W8.5 nsN-Channel160mOhm @ 5.8A, 10V4V @ 250μA670pF @ 25V9.7A Tc33nC @ 10V28ns100V10V±20V25 ns34 ns9.7A20V-670pF160mOhm160 mΩ9.8mm10.63mm4.83mmNoNon-RoHS Compliant---
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