IRFI840G

Vishay Siliconix IRFI840G

Part Number:
IRFI840G
Manufacturer:
Vishay Siliconix
Ventron No:
2488447-IRFI840G
Description:
MOSFET N-CH 500V 4.6A TO220FP
ECAD Model:
Datasheet:
IRFI840G

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Part Pictures
  • IRFI840G Detail Images
  • IRFI840G Detail Images
  • IRFI840G Detail Images
  • IRFI840G Detail Images
  • IRFI840G Detail Images
  • IRFI840G Detail Images
  • IRFI840G Detail Images
  • IRFI840G Detail Images
Specifications
Vishay Siliconix IRFI840G technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFI840G.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack, Isolated Tab
  • Number of Pins
    3
  • Supplier Device Package
    TO-220-3
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2016
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    40W Tc
  • Element Configuration
    Single
  • Power Dissipation
    40W
  • Turn On Delay Time
    14 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    850mOhm @ 2.8A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1300pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    4.6A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    67nC @ 10V
  • Rise Time
    22ns
  • Drain to Source Voltage (Vdss)
    500V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    21 ns
  • Turn-Off Delay Time
    55 ns
  • Continuous Drain Current (ID)
    4.6A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    500V
  • Input Capacitance
    1.3nF
  • Drain to Source Resistance
    850mOhm
  • Rds On Max
    850 mΩ
  • Height
    9.8mm
  • Length
    10.63mm
  • Width
    4.83mm
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
IRFI840G Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 4.6A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 55 ns.This device has a drain-to-source resistance of 850mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IRFI840G Features
a continuous drain current (ID) of 4.6A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 55 ns
single MOSFETs transistor is 850mOhm
a 500V drain to source voltage (Vdss)


IRFI840G Applications
There are a lot of Vishay Siliconix
IRFI840G applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRFI840G More Descriptions
Trans MOSFET N-CH 500V 4.6A 3-Pin (3 Tab) TO-220 Full-Pak
IRFI840G,500V 4.6A SINGLE N-C HANNEL HEXFET POWER MOSFET IN
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=4.6A)
French Electronic Distributor since 1988
IRFI840G Detail Images
Product Comparison
The three parts on the right have similar specifications to IRFI840G.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Voltage - Rated DC
    Current Rating
    Lead Free
    View Compare
  • IRFI840G
    IRFI840G
    Through Hole
    Through Hole
    TO-220-3 Full Pack, Isolated Tab
    3
    TO-220-3
    6.000006g
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1
    40W Tc
    Single
    40W
    14 ns
    N-Channel
    850mOhm @ 2.8A, 10V
    4V @ 250μA
    1300pF @ 25V
    4.6A Tc
    67nC @ 10V
    22ns
    500V
    10V
    ±20V
    21 ns
    55 ns
    4.6A
    20V
    500V
    1.3nF
    850mOhm
    850 mΩ
    9.8mm
    10.63mm
    4.83mm
    No
    Non-RoHS Compliant
    -
    -
    -
    -
  • IRFI9Z14G
    Through Hole
    Through Hole
    TO-220-3 Full Pack, Isolated Tab
    3
    TO-220-3
    6.000006g
    -55°C~175°C TJ
    Tube
    2009
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    MOSFET (Metal Oxide)
    -
    1
    27W Tc
    Single
    -
    11 ns
    P-Channel
    500mOhm @ 3.2A, 10V
    4V @ 250μA
    270pF @ 25V
    5.3A Tc
    12nC @ 10V
    63ns
    60V
    10V
    ±20V
    31 ns
    9.6 ns
    5.3A
    20V
    -
    270pF
    500mOhm
    500 mΩ
    9.8mm
    10.63mm
    4.83mm
    No
    Non-RoHS Compliant
    -
    -
    -
  • IRFI614G
    Through Hole
    Through Hole
    TO-220-3 Full Pack, Isolated Tab
    3
    TO-220-3
    6.000006g
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    MOSFET (Metal Oxide)
    -
    1
    23W Tc
    Single
    -
    7 ns
    N-Channel
    2Ohm @ 1.3A, 10V
    4V @ 250μA
    140pF @ 25V
    2.1A Tc
    8.2nC @ 10V
    7.6ns
    250V
    10V
    ±20V
    7 ns
    16 ns
    2.1A
    20V
    -
    140pF
    2Ohm
    2 Ω
    9.8mm
    10.63mm
    4.83mm
    No
    Non-RoHS Compliant
    250V
    2.1A
    Contains Lead
  • IRFI530G
    Through Hole
    Through Hole
    TO-220-3 Full Pack, Isolated Tab
    3
    TO-220-3
    6.000006g
    -55°C~175°C TJ
    Tube
    2017
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1
    42W Tc
    Single
    42W
    8.5 ns
    N-Channel
    160mOhm @ 5.8A, 10V
    4V @ 250μA
    670pF @ 25V
    9.7A Tc
    33nC @ 10V
    28ns
    100V
    10V
    ±20V
    25 ns
    34 ns
    9.7A
    20V
    -
    670pF
    160mOhm
    160 mΩ
    9.8mm
    10.63mm
    4.83mm
    No
    Non-RoHS Compliant
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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