IRFI740GPBF

Vishay Siliconix IRFI740GPBF

Part Number:
IRFI740GPBF
Manufacturer:
Vishay Siliconix
Ventron No:
2483186-IRFI740GPBF
Description:
MOSFET N-CH 400V 5.4A TO220FP
ECAD Model:
Datasheet:
IRFI740GPBF

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Specifications
Vishay Siliconix IRFI740GPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFI740GPBF.
  • Factory Lead Time
    11 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack, Isolated Tab
  • Number of Pins
    3
  • Supplier Device Package
    TO-220-3
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2011
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    550mOhm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    40W Tc
  • Element Configuration
    Single
  • Power Dissipation
    40W
  • Turn On Delay Time
    14 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    550mOhm @ 3.2A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1370pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    5.4A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    66nC @ 10V
  • Rise Time
    25ns
  • Drain to Source Voltage (Vdss)
    400V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    24 ns
  • Turn-Off Delay Time
    54 ns
  • Continuous Drain Current (ID)
    5.4A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    400V
  • Input Capacitance
    1.37nF
  • Isolation Voltage
    2.5kV
  • Drain to Source Resistance
    550mOhm
  • Rds On Max
    550 mΩ
  • Height
    9.8mm
  • Length
    10.63mm
  • Width
    4.83mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFI740GPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1370pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 400V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 400V.As a result of its turn-off delay time, which is 54 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 550mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.The transistor must receive a 400V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFI740GPBF Features
a continuous drain current (ID) of 5.4A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 54 ns
single MOSFETs transistor is 550mOhm
a threshold voltage of 4V
a 400V drain to source voltage (Vdss)


IRFI740GPBF Applications
There are a lot of Vishay Siliconix
IRFI740GPBF applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IRFI740GPBF More Descriptions
Single N-Channel 400 V 0.55 Ohms Flange Mount Power Mosfet - TO-220FP
Trans MOSFET N-CH 400V 5.4A 3-Pin(3 Tab) TO-220 Full-Pak
400V 5.4A 550m´Î@10V3.2A 40W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:5.4A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:40W; No. Of Pins:3Pins Rohs Compliant: No |Vishay IRFI740GPBF.
Power Field-Effect Transistor, 5.4A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Product Comparison
The three parts on the right have similar specifications to IRFI740GPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Isolation Voltage
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    Series
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Voltage - Rated DC
    Current Rating
    View Compare
  • IRFI740GPBF
    IRFI740GPBF
    11 Weeks
    Tin
    Through Hole
    Through Hole
    TO-220-3 Full Pack, Isolated Tab
    3
    TO-220-3
    6.000006g
    -55°C~150°C TJ
    Tube
    2011
    Active
    1 (Unlimited)
    550mOhm
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1
    40W Tc
    Single
    40W
    14 ns
    N-Channel
    550mOhm @ 3.2A, 10V
    4V @ 250μA
    1370pF @ 25V
    5.4A Tc
    66nC @ 10V
    25ns
    400V
    10V
    ±20V
    24 ns
    54 ns
    5.4A
    4V
    20V
    400V
    1.37nF
    2.5kV
    550mOhm
    550 mΩ
    9.8mm
    10.63mm
    4.83mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFI9540G
    -
    -
    Through Hole
    Through Hole
    TO-220-3 Full Pack, Isolated Tab
    3
    TO-220-3
    6.000006g
    -55°C~175°C TJ
    Tube
    2014
    Obsolete
    1 (Unlimited)
    200MOhm
    175°C
    -55°C
    MOSFET (Metal Oxide)
    -
    1
    48W Tc
    Single
    -
    24 ns
    P-Channel
    200mOhm @ 6.6A, 10V
    4V @ 250μA
    1400pF @ 25V
    11A Tc
    61nC @ 10V
    110ns
    100V
    10V
    ±20V
    86 ns
    51 ns
    11A
    -
    20V
    -
    1.4nF
    -
    200mOhm
    200 mΩ
    9.8mm
    10.63mm
    4.83mm
    -
    No
    Non-RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFI9Z24N
    -
    -
    -
    Through Hole
    TO-220-3 Full Pack
    -
    -
    -
    -
    Tube
    1997
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    1
    -
    29W Tc
    -
    -
    -
    P-Channel
    175m Ω @ 5.4A, 10V
    4V @ 250μA
    350pF @ 25V
    9.5A Tc
    19nC @ 10V
    -
    55V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    NO
    SILICON
    HEXFET®
    e0
    3
    EAR99
    Tin/Lead (Sn/Pb)
    AVALANCHE RATED, HIGH RELIABILITY
    Other Transistors
    SINGLE
    225
    30
    R-PSFM-T3
    Not Qualified
    175°C
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    ISOLATED
    SWITCHING
    TO-220AB
    9.5A
    0.175Ohm
    48A
    55V
    96 mJ
    -
    -
  • IRFI630G
    -
    -
    Through Hole
    Through Hole
    TO-220-3 Full Pack, Isolated Tab
    3
    TO-220-3
    6.000006g
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    -
    150°C
    -55°C
    MOSFET (Metal Oxide)
    -
    1
    35W Tc
    Single
    32W
    9.4 ns
    N-Channel
    400mOhm @ 3.5A, 10V
    4V @ 250μA
    800pF @ 25V
    5.9A Tc
    43nC @ 10V
    28ns
    200V
    10V
    ±20V
    20 ns
    39 ns
    5.9A
    -
    20V
    200V
    800pF
    -
    400mOhm
    400 mΩ
    9.8mm
    10.63mm
    4.83mm
    -
    No
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    250V
    5.9A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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