Vishay Siliconix IRFI740GPBF
- Part Number:
- IRFI740GPBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2483186-IRFI740GPBF
- Description:
- MOSFET N-CH 400V 5.4A TO220FP
- Datasheet:
- IRFI740GPBF
Vishay Siliconix IRFI740GPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFI740GPBF.
- Factory Lead Time11 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack, Isolated Tab
- Number of Pins3
- Supplier Device PackageTO-220-3
- Weight6.000006g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2011
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance550mOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max40W Tc
- Element ConfigurationSingle
- Power Dissipation40W
- Turn On Delay Time14 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs550mOhm @ 3.2A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1370pF @ 25V
- Current - Continuous Drain (Id) @ 25°C5.4A Tc
- Gate Charge (Qg) (Max) @ Vgs66nC @ 10V
- Rise Time25ns
- Drain to Source Voltage (Vdss)400V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)24 ns
- Turn-Off Delay Time54 ns
- Continuous Drain Current (ID)5.4A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage400V
- Input Capacitance1.37nF
- Isolation Voltage2.5kV
- Drain to Source Resistance550mOhm
- Rds On Max550 mΩ
- Height9.8mm
- Length10.63mm
- Width4.83mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFI740GPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1370pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 400V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 400V.As a result of its turn-off delay time, which is 54 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 550mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.The transistor must receive a 400V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFI740GPBF Features
a continuous drain current (ID) of 5.4A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 54 ns
single MOSFETs transistor is 550mOhm
a threshold voltage of 4V
a 400V drain to source voltage (Vdss)
IRFI740GPBF Applications
There are a lot of Vishay Siliconix
IRFI740GPBF applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1370pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 400V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 400V.As a result of its turn-off delay time, which is 54 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 550mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.The transistor must receive a 400V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFI740GPBF Features
a continuous drain current (ID) of 5.4A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 54 ns
single MOSFETs transistor is 550mOhm
a threshold voltage of 4V
a 400V drain to source voltage (Vdss)
IRFI740GPBF Applications
There are a lot of Vishay Siliconix
IRFI740GPBF applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IRFI740GPBF More Descriptions
Single N-Channel 400 V 0.55 Ohms Flange Mount Power Mosfet - TO-220FP
Trans MOSFET N-CH 400V 5.4A 3-Pin(3 Tab) TO-220 Full-Pak
400V 5.4A 550m´Î@10V3.2A 40W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:5.4A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:40W; No. Of Pins:3Pins Rohs Compliant: No |Vishay IRFI740GPBF.
Power Field-Effect Transistor, 5.4A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Trans MOSFET N-CH 400V 5.4A 3-Pin(3 Tab) TO-220 Full-Pak
400V 5.4A 550m´Î@10V3.2A 40W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:5.4A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:40W; No. Of Pins:3Pins Rohs Compliant: No |Vishay IRFI740GPBF.
Power Field-Effect Transistor, 5.4A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The three parts on the right have similar specifications to IRFI740GPBF.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceIsolation VoltageDrain to Source ResistanceRds On MaxHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTransistor Element MaterialSeriesJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOperating Temperature (Max)ConfigurationOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Voltage - Rated DCCurrent RatingView Compare
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IRFI740GPBF11 WeeksTinThrough HoleThrough HoleTO-220-3 Full Pack, Isolated Tab3TO-220-36.000006g-55°C~150°C TJTube2011Active1 (Unlimited)550mOhm150°C-55°CMOSFET (Metal Oxide)1140W TcSingle40W14 nsN-Channel550mOhm @ 3.2A, 10V4V @ 250μA1370pF @ 25V5.4A Tc66nC @ 10V25ns400V10V±20V24 ns54 ns5.4A4V20V400V1.37nF2.5kV550mOhm550 mΩ9.8mm10.63mm4.83mmUnknownNoROHS3 CompliantLead Free----------------------------
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--Through HoleThrough HoleTO-220-3 Full Pack, Isolated Tab3TO-220-36.000006g-55°C~175°C TJTube2014Obsolete1 (Unlimited)200MOhm175°C-55°CMOSFET (Metal Oxide)-148W TcSingle-24 nsP-Channel200mOhm @ 6.6A, 10V4V @ 250μA1400pF @ 25V11A Tc61nC @ 10V110ns100V10V±20V86 ns51 ns11A-20V-1.4nF-200mOhm200 mΩ9.8mm10.63mm4.83mm-NoNon-RoHS CompliantLead Free---------------------------
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---Through HoleTO-220-3 Full Pack----Tube1997Obsolete1 (Unlimited)---MOSFET (Metal Oxide)1-29W Tc---P-Channel175m Ω @ 5.4A, 10V4V @ 250μA350pF @ 25V9.5A Tc19nC @ 10V-55V10V±20V---------------Non-RoHS Compliant-NOSILICONHEXFET®e03EAR99Tin/Lead (Sn/Pb)AVALANCHE RATED, HIGH RELIABILITYOther TransistorsSINGLE22530R-PSFM-T3Not Qualified175°CSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEISOLATEDSWITCHINGTO-220AB9.5A0.175Ohm48A55V96 mJ--
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--Through HoleThrough HoleTO-220-3 Full Pack, Isolated Tab3TO-220-36.000006g-55°C~150°C TJTube2016Obsolete1 (Unlimited)-150°C-55°CMOSFET (Metal Oxide)-135W TcSingle32W9.4 nsN-Channel400mOhm @ 3.5A, 10V4V @ 250μA800pF @ 25V5.9A Tc43nC @ 10V28ns200V10V±20V20 ns39 ns5.9A-20V200V800pF-400mOhm400 mΩ9.8mm10.63mm4.83mm-NoNon-RoHS CompliantContains Lead-------------------------250V5.9A
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