Vishay Siliconix IRFI620GPBF

Name: IRFI620GPBF
Brand: Vishay Siliconix
SKU: 2483591-IRFI620GPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFI620GPBF

Manufacturer:: Vishay Siliconix

Ventron No:: 2483591-IRFI620GPBF

Description:: MOSFET N-CH 200V 4.1A TO220FP

ECAD Model:

Datasheet:: IRFI620GPBF

Specifications

Vishay Siliconix IRFI620GPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFI620GPBF.

Factory Lead Time
8 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Isolated Tab
Number of Pins
3
Weight
6.000006g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
800mOhm
Terminal Finish
MATTE TIN
Voltage - Rated DC
200V
Technology
MOSFET (Metal Oxide)
Current Rating
4.1A
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
30W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
30W
Turn On Delay Time
7.2 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
800m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
260pF @ 25V
Current - Continuous Drain (Id) @ 25°C
4.1A Tc
Gate Charge (Qg) (Max) @ Vgs
14nC @ 10V
Rise Time
22ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
13 ns
Turn-Off Delay Time
19 ns
Continuous Drain Current (ID)
4.1A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
200V
Dual Supply Voltage
200V
Recovery Time
300 ns
Isolation Voltage
2.5kV
Nominal Vgs
4 V
Height
9.8mm
Length
10.63mm
Width
4.83mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRFI620GPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 260pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 200V.As a result of its turn-off delay time, which is 19 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 7.2 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFI620GPBF Features
a continuous drain current (ID) of 4.1A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 19 ns
a threshold voltage of 4V

IRFI620GPBF Applications
There are a lot of Vishay Siliconix
IRFI620GPBF applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

IRFI620GPBF More Descriptions

Single N-Channel 200 V 0.8 Ohms Flange Mount Power Mosfet - TO-220FP
Trans MOSFET N-CH 200V 4.1A 3-Pin(3 Tab) TO-220 Full-Pak
Pwr MOSFET, 200V Single N-Ch. HEXFET; TO-220 FullPak (ISO)
MOSFET, N, FULLPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.1A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 30W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Isolation Voltage: 2.5kV; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: 16A; Voltage Vds Typ: 200V; Voltage Vgs Rds on Measurement: 10V

Product Comparison

The three parts on the right have similar specifications to IRFI620GPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Voltage - Rated DC

Technology

Current Rating

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Recovery Time

Isolation Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Series

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Case Connection

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Input Capacitance

Drain to Source Resistance

Rds On Max

View Compare
IRFI620GPBF

Vishay Siliconix

8 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack, Isolated Tab

3

6.000006g

SILICON

-55°C~150°C TJ

Tube

2004

e3

yes

Active

1 (Unlimited)

3

EAR99

800mOhm

MATTE TIN

200V

MOSFET (Metal Oxide)

4.1A

3

1

1

30W Tc

Single

ENHANCEMENT MODE

30W

7.2 ns

N-Channel

SWITCHING

800m Ω @ 2.5A, 10V

4V @ 250μA

260pF @ 25V

4.1A Tc

14nC @ 10V

22ns

10V

±20V

13 ns

19 ns

4.1A

4V

TO-220AB

20V

200V

200V

300 ns

2.5kV

4 V

9.8mm

10.63mm

4.83mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFI4905

Infineon Technologies

-

-

Through Hole

TO-220-3 Full Pack

-

-

SILICON

-

Tube

1997

e3

-

Obsolete

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn) - with Nickel (Ni) barrier

-

MOSFET (Metal Oxide)

-

-

1

-

63W Tc

-

ENHANCEMENT MODE

-

-

P-Channel

SWITCHING

20m Ω @ 22A, 10V

4V @ 250μA

3400pF @ 25V

41A Tc

180nC @ 10V

-

10V

±20V

-

-

-

-

TO-220AB

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

NO

HEXFET®

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

ISOLATED

55V

41A

0.02Ohm

260A

55V

930 mJ

-

-

-

-

-

-

IRFI620GPBF vs IRFI4905
IRFI530G

Vishay Siliconix

-

Through Hole

Through Hole

TO-220-3 Full Pack, Isolated Tab

3

6.000006g

-

-55°C~175°C TJ

Tube

2017

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

1

1

42W Tc

Single

-

42W

8.5 ns

N-Channel

-

160mOhm @ 5.8A, 10V

4V @ 250μA

670pF @ 25V

9.7A Tc

33nC @ 10V

28ns

10V

±20V

25 ns

34 ns

9.7A

-

-

20V

-

-

-

-

-

9.8mm

10.63mm

4.83mm

-

No

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

100V

-

-

-

-

-

TO-220-3

175°C

-55°C

670pF

160mOhm

160 mΩ

IRFI620GPBF vs IRFI530G
IRFI630G

Vishay Siliconix

-

Through Hole

Through Hole

TO-220-3 Full Pack, Isolated Tab

3

6.000006g

-

-55°C~150°C TJ

Tube

2016

-

-

Obsolete

1 (Unlimited)

-

-

-

-

250V

MOSFET (Metal Oxide)

5.9A

-

-

1

35W Tc

Single

-

32W

9.4 ns

N-Channel

-

400mOhm @ 3.5A, 10V

4V @ 250μA

800pF @ 25V

5.9A Tc

43nC @ 10V

28ns

10V

±20V

20 ns

39 ns

5.9A

-

-

20V

200V

-

-

-

-

9.8mm

10.63mm

4.83mm

-

No

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

200V

-

-

-

-

-

TO-220-3

150°C

-55°C

800pF

400mOhm

400 mΩ

IRFI620GPBF vs IRFI630G

Certification

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IRFI620GPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFI620GPBF DISTI #IRFI620GPBF	Vishay Intertechnologies	Trans MOSFET N-CH 200V 4.1A 3-Pin(3 Tab) TO-220FP RoHS: Compliant	895	1 $0.9556 10 $0.86 100 $0.774 500 $0.7137 1000 $0.6882
IRFI620GPBF DISTI #IRFI620GPBF	Vishay Siliconix	MOSFET N-CH 200V 4.1A TO220FP RoHS: Compliant	924	1 $1.79 50 $1.434 100 $1.2548 500 $0.9731 1000 $0.76824
IRFI620GPBF DISTI #IRFI620GPBF	Vishay Intertechnologies	Trans MOSFET N-CH 200V 4.1A 3-Pin(3 Tab) TO-220FP RoHS: Compliant	895	9 $0.9529 10 $0.8576 100 $0.7718 500 $0.7043
IRFI620GPBF DISTI #IRFI620GPBF	Vishay Intertechnologies	Trans MOSFET N-CH 200V 4.1A 3-Pin(3 Tab) TO-220 Fu RoHS: Not Compliant	700	1 $0.7639 10 $0.7459 25 $0.7279 50 $0.6999 100 $0.6669 500 $0.6519 1000 $0.6369
IRFI620GPBF. DISTI #IRFI620GPBF.	Vishay Intertechnologies	Transistor Polarity:N Channel, Continuous Drain C	0	1 $1.57 10 $1.3 100 $0.993 500 $0.853 1000 $0.71 5000 $0.701 10000 $0.693
IRFI620GPBF DISTI #IRFI620GPBF	Vishay Intertechnologies	MOSFET, Powr, N-Ch, VDSS200V, RDS(ON) 0.8Ohm, RoHS: Compliant	3722	1 $1.185 25 $1.144 100 $1.044 250 $0.964 500 $0.893
IRFI620GPBF DISTI #IRFI620GPBF	Vishay Intertechnologies	MOSFET N-Chan 200V 4.1 Amp RoHS: Compliant	573	1 $1.57 10 $1.3 100 $0.993 500 $0.853 1000 $0.674 2500 $0.629 5000 $0.598 10000 $0.575
IRFI620G DISTI #IRFI620G	Vishay Intertechnologies	MOSFET N-Chan 200V 4.1 Amp RoHS: Not Compliant	0
IRFI620GPBF DISTI #IRFI620GPBF	International Rectifier	4.1A, 200V, 0.8OHM, N-CHANNEL, SI, POWER, MOSFET,	2255	1 $1.52 377 $0.475 1685 $0.418
IRFI620GPBF DISTI #IRFI620GPBF	Vishay Intertechnologies	TRANS MOSFET N-CH 200V 4A 3-PIN(3 TAB), PK	615	5 $0.802 50 $0.66 100 $0.604 250 $0.566 500 $0.552
IRFI620GPBF DISTI #IRFI620GPBF	International Rectifier	RoHS: Compliant	2700
IRFI620GPBF DISTI #IRFI620GPBF	Vishay Intertechnologies	RoHS: Compliant	950
IRFI620GPBF. DISTI #IRFI620GPBF.	Vishay Intertechnologies	MOSFET, N, FULLPAK RoHS: Compliant	0	1 $2.49 10 $2.06 100 $1.58 500 $1.36 1000 $1.08 2500 $0.996 5000 $0.947 10000 $0.911
IRFI620GPBF DISTI #IRFI620GPBF	Vishay Intertechnologies	MOSFET N-Chan 200V 4.1 Amp RoHS: Compliant	0
IRFI620GPBF DISTI #IRFI620GPBF	Vishay Intertechnologies	Trans MOSFET N-CH 200V 4.1A 3-Pin(3 Tab) TO-220 Fu RoHS: Compliant	895	10 $1.03 100 $0.7718 500 $0.706

IRFI620~~(4)~~
IRFI62~~(9)~~
IRFI6~~(45)~~
IRFI~~(60)~~
IRF~~(69)~~

Vishay Siliconix IRFI620GPBF

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