Vishay Siliconix IRFI510GPBF

Name: IRFI510GPBF
Brand: Vishay Siliconix
SKU: 2479891-IRFI510GPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFI510GPBF

Manufacturer:: Vishay Siliconix

Ventron No:: 2479891-IRFI510GPBF

Description:: MOSFET N-CH 100V 4.5A TO220FP

ECAD Model:

Datasheet:: IRFI510GPBF

Specifications

Vishay Siliconix IRFI510GPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFI510GPBF.

Factory Lead Time
8 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Isolated Tab
Number of Pins
3
Supplier Device Package
TO-220-3
Weight
6.000006g
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2017
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
27W Tc
Element Configuration
Single
Power Dissipation
27W
Turn On Delay Time
6.9 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
540mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
180pF @ 25V
Current - Continuous Drain (Id) @ 25°C
4.5A Tc
Gate Charge (Qg) (Max) @ Vgs
8.3nC @ 10V
Rise Time
16ns
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
9.4 ns
Turn-Off Delay Time
15 ns
Continuous Drain Current (ID)
4.5A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
180pF
Drain to Source Resistance
540mOhm
Rds On Max
540 mΩ
Nominal Vgs
4 V
Height
9.8mm
Length
10.63mm
Width
4.83mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

IRFI510GPBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 180pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4.5A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 15 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 540mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.9 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.

IRFI510GPBF Features
a continuous drain current (ID) of 4.5A
the turn-off delay time is 15 ns
single MOSFETs transistor is 540mOhm
a threshold voltage of 4V
a 100V drain to source voltage (Vdss)

IRFI510GPBF Applications
There are a lot of Vishay Siliconix
IRFI510GPBF applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

IRFI510GPBF More Descriptions

Trans MOSFET N-CH 100V 4.5A 3-Pin(3 Tab) TO-220 Full-Pak
MOSFET N-CH 100V 4.5A TO220FP | Siliconix / Vishay IRFI510GPBF
Power Field-Effect Transistor, 4.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 100V, 4.5A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.5A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; P

Product Comparison

The three parts on the right have similar specifications to IRFI510GPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Technology

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Input Capacitance

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Resistance

Lead Free

Voltage - Rated DC

Current Rating

Drain to Source Breakdown Voltage

View Compare
IRFI510GPBF

Vishay Siliconix

8 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack, Isolated Tab

3

TO-220-3

6.000006g

-55°C~175°C TJ

Tube

2017

Active

1 (Unlimited)

175°C

-55°C

MOSFET (Metal Oxide)

1

1

27W Tc

Single

27W

6.9 ns

N-Channel

540mOhm @ 2.7A, 10V

4V @ 250μA

180pF @ 25V

4.5A Tc

8.3nC @ 10V

16ns

100V

10V

±20V

9.4 ns

15 ns

4.5A

4V

20V

180pF

540mOhm

540 mΩ

4 V

9.8mm

10.63mm

4.83mm

No SVHC

No

ROHS3 Compliant

-

-

-

-

-

-
IRFI9540G

Vishay Siliconix

-

Through Hole

Through Hole

TO-220-3 Full Pack, Isolated Tab

3

TO-220-3

6.000006g

-55°C~175°C TJ

Tube

2014

Obsolete

1 (Unlimited)

175°C

-55°C

MOSFET (Metal Oxide)

-

1

48W Tc

Single

-

24 ns

P-Channel

200mOhm @ 6.6A, 10V

4V @ 250μA

1400pF @ 25V

11A Tc

61nC @ 10V

110ns

100V

10V

±20V

86 ns

51 ns

11A

-

20V

1.4nF

200mOhm

200 mΩ

-

9.8mm

10.63mm

4.83mm

-

No

Non-RoHS Compliant

200MOhm

Lead Free

-

-

-

IRFI510GPBF vs IRFI9540G
IRFI614G

Vishay Siliconix

-

Through Hole

Through Hole

TO-220-3 Full Pack, Isolated Tab

3

TO-220-3

6.000006g

-55°C~150°C TJ

Tube

2016

Obsolete

1 (Unlimited)

150°C

-55°C

MOSFET (Metal Oxide)

-

1

23W Tc

Single

-

7 ns

N-Channel

2Ohm @ 1.3A, 10V

4V @ 250μA

140pF @ 25V

2.1A Tc

8.2nC @ 10V

7.6ns

250V

10V

±20V

7 ns

16 ns

2.1A

-

20V

140pF

2Ohm

2 Ω

-

9.8mm

10.63mm

4.83mm

-

No

Non-RoHS Compliant

-

Contains Lead

250V

2.1A

-

IRFI510GPBF vs IRFI614G
IRFI630G

Vishay Siliconix

-

Through Hole

Through Hole

TO-220-3 Full Pack, Isolated Tab

3

TO-220-3

6.000006g

-55°C~150°C TJ

Tube

2016

Obsolete

1 (Unlimited)

150°C

-55°C

MOSFET (Metal Oxide)

-

1

35W Tc

Single

32W

9.4 ns

N-Channel

400mOhm @ 3.5A, 10V

4V @ 250μA

800pF @ 25V

5.9A Tc

43nC @ 10V

28ns

200V

10V

±20V

20 ns

39 ns

5.9A

-

20V

800pF

400mOhm

400 mΩ

-

9.8mm

10.63mm

4.83mm

-

No

Non-RoHS Compliant

-

Contains Lead

250V

5.9A

200V

IRFI510GPBF vs IRFI630G

Certification

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IRFI510GPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFI510GPBF DISTI #IRFI510GPBF	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.5A 3-Pin(3 Tab) TO-220FP RoHS: Compliant	1640	1 $1.9785 10 $1.6798 100 $1.3115 500 $1.1543 1000 $0.9991 2500 $0.9306 5000 $0.8983 10000 $0.8812
IRFI510GPBF DISTI #IRFI510GPBF	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.5A 3-Pin(3 Tab) TO-220FP RoHS: Compliant	280	1 $1.9785 10 $1.6798 100 $1.3115 500 $1.1543 1000 $0.9991 2500 $0.9306 5000 $0.8983 10000 $0.8812
IRFI510GPBF DISTI #IRFI510GPBF	Vishay Siliconix	MOSFET N-CH 100V 4.5A TO220FP RoHS: Compliant	985	1 $2.24 50 $1.8208 100 $1.6452 500 $1.29378 1000 $1.08294
IRFI510GPBF DISTI #IRFI510GPBF	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.5A 3-Pin(3 Tab) TO-220FP RoHS: Compliant	1640	7 $1.9785 10 $1.6798 100 $1.3115 500 $1.1543 1000 $0.9991 2500 $0.9306 5000 $0.8983 10000 $0.8812
IRFI510GPBF DISTI #IRFI510GPBF	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.5A 3-Pin(3 Tab) TO-220FP RoHS: Compliant	280	8 $1.9785 10 $1.6798 100 $1.3115 500 $1.1543 1000 $0.9991 2500 $0.9306 5000 $0.8983 10000 $0.8812
IRFI510GPBF DISTI #IRFI510GPBF	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.5A 3-Pin(3 Tab) TO-220 Fu RoHS: Not Compliant	0	1000 $1.0169 2000 $0.9869 4000 $0.9469 6000 $0.9199 10000 $0.8959
IRFI510GPBF DISTI #IRFI510GPBF	Vishay Intertechnologies	MOSFET, N-CH, 100V, 4.5A, TO-220FP, Transistor Po	925	1 $2.29 10 $1.93 25 $1.79 50 $1.66 100 $1.53 500 $1.36 1000 $1.15 2500 $1.09
IRFI510GPBF DISTI #IRFI510GPBF	Vishay Siliconix	MOSFET N-CH 100V 4.5A TO220FP RoHS: Compliant	0	1000 $1.959 2000 $1.574
IRFI510GPBF DISTI #IRFI510GPBF	Vishay Intertechnologies	IRFI510GPBF N-channel MOSFET Transistor, 4.5 A, RoHS: Compliant	0	1000 $1.458 2000 $1.404
IRFI510GPBF DISTI #IRFI510GPBF	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 844-IRFI510GPBF RoHS: Compliant	908	1 $2.18 10 $1.81 100 $1.4 500 $1.23 1000 $1.02 2500 $0.944 5000 $0.909
IRFI510G DISTI #IRFI510G	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 844-IRFI510GPBF RoHS: Not Compliant	0
IRFI510GPBF DISTI #IRFI510GPBF	Vishay Intertechnologies	MOSFET N-CHANNEL 100V 4.5A TO-220FP, PK	1190	10 $0.946 100 $0.802 250 $0.752 500 $0.685 1000 $0.566
IRFI510GPBF DISTI #IRFI510GPBF	Vishay Intertechnologies	RoHS: Compliant	450
IRFI510GPBF DISTI #IRFI510GPBF	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 844-IRFI510GPBF RoHS: Compliant	0
IRFI510GPBF DISTI #IRFI510GPBF	Vishay Intertechnologies	MOSFET, N-CH, 100V, 4.5A, TO-220FP RoHS: Compliant	925	1 $3.46 10 $2.87 100 $2.22 500 $1.95 1000 $1.62 2500 $1.5 5000 $1.44 10000 $1.39
IRFI510GPBF DISTI #IRFI510GPBF	Vishay Intertechnologies	MOSFET, N-CH, 100V, 4.5A, TO-220FP RoHS: Compliant	1978	5 $0.946 25 $0.677 100 $0.669 250 $0.659 500 $0.651

IRFI510~~(6)~~
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Vishay Siliconix IRFI510GPBF

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