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IRF8707PBF

Infineon Technologies IRF8707PBF

Part Number:
IRF8707PBF
Manufacturer:
Infineon Technologies
Ventron No:
2853941-IRF8707PBF
Description:
MOSFET N-CH 30V 11A 8-SOIC
ECAD Model:
Datasheet:
IRF8707PBF

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Specifications
Infineon Technologies IRF8707PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF8707PBF.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2007
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    11.9MOhm
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Number of Elements
    1
  • Power Dissipation-Max
    2.5W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    6.7 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    11.9m Ω @ 11A, 10V
  • Vgs(th) (Max) @ Id
    2.35V @ 25μA
  • Input Capacitance (Ciss) (Max) @ Vds
    760pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    11A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    9.3nC @ 4.5V
  • Rise Time
    7.9ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    4.4 ns
  • Turn-Off Delay Time
    7.3 ns
  • Continuous Drain Current (ID)
    11A
  • Threshold Voltage
    1.8V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • Dual Supply Voltage
    30V
  • Avalanche Energy Rating (Eas)
    53 mJ
  • Recovery Time
    18 ns
  • Nominal Vgs
    1.8 V
  • Height
    1.5mm
  • Length
    5mm
  • Width
    3.9878mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRF8707PBF Description
The IRF8707PBF is an N-channel Power MOSFET incorporating the latest HEXFET? power MOSFET silicon technology into the industry-standard SO-8 package. The IRF8707PBF has been optimized for parameters that are critical in synchronous buck operation including RDS (ON) and gate charge to reduce both conduction and switching losses. The reduced total losses make the IRF8707PBF ideal for high-efficiency DC-DC converters that power the latest generation of processors.

IRF8707PBF Features
Very Low Gate Charge
Very Low RDS(on) at 4.5V VGS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage and Current
20V VGS Max. Gate Rating
100% tested for Rg
Lead-Free

IRF8707PBF Applications
Control MOSFET of Sync-Buck Converters used for Notebook Processor Power
Control MOSFET for Isolated DC-DC Converters in Networking Systems
IRF8707PBF More Descriptions
IRF8707PBF N-channel MOSFET Transistor,11 A, 30 V, 8-Pin SOIC
Trans MOSFET N-CH Si 30V 11A 8-Pin SOIC Tube
MOSFET, N SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; Charge Qrr @ Tj = 25°C Typ:6.2nC; Current Id Max:11A; Package / Case:SOIC-8; Pulse Current Idm:88A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to IRF8707PBF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    Recovery Time
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Weight
    Max Operating Temperature
    Min Operating Temperature
    Number of Channels
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Voltage - Rated DC
    Current Rating
    View Compare
  • IRF8707PBF
    IRF8707PBF
    Infineon Technologies
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tube
    HEXFET®
    2007
    Discontinued
    1 (Unlimited)
    8
    SMD/SMT
    EAR99
    11.9MOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1
    2.5W Ta
    Single
    ENHANCEMENT MODE
    2.5W
    6.7 ns
    N-Channel
    SWITCHING
    11.9m Ω @ 11A, 10V
    2.35V @ 25μA
    760pF @ 15V
    11A Ta
    9.3nC @ 4.5V
    7.9ns
    4.5V 10V
    ±20V
    4.4 ns
    7.3 ns
    11A
    1.8V
    20V
    30V
    30V
    53 mJ
    18 ns
    1.8 V
    1.5mm
    5mm
    3.9878mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF8302MTR1PBF
    IRF8302MTR1PBF
    Infineon Technologies
    -
    Surface Mount
    DirectFET™ Isometric MX
    -
    -
    -40°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2013
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    2.8W Ta 104W Tc
    -
    -
    -
    -
    N-Channel
    -
    1.8mOhm @ 31A, 10V
    2.35V @ 150μA
    6030pF @ 15V
    31A Ta 190A Tc
    53nC @ 4.5V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    DIRECTFET™ MX
    30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRF8707PBF vs IRF8302MTR1PBF
  • IRF840ASTRR
    IRF840ASTRR
    Vishay Siliconix
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    3.1W Ta 125W Tc
    Single
    -
    -
    11 ns
    N-Channel
    -
    850mOhm @ 4.8A, 10V
    4V @ 250μA
    1018pF @ 25V
    8A Tc
    38nC @ 10V
    23ns
    10V
    ±30V
    19 ns
    26 ns
    8A
    -
    30V
    500V
    -
    -
    -
    -
    4.83mm
    10.67mm
    9.65mm
    -
    -
    Non-RoHS Compliant
    -
    D2PAK
    500V
    1.437803g
    150°C
    -55°C
    1
    1.018nF
    850mOhm
    850 mΩ
    -
    -
    IRF8707PBF vs IRF840ASTRR
  • IRF840L
    IRF840L
    Vishay Siliconix
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    3
    -
    -55°C~150°C TJ
    Tube
    -
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    125W Tc
    Single
    -
    -
    14 ns
    N-Channel
    -
    850mOhm @ 4.8A, 10V
    4V @ 250μA
    1300pF @ 25V
    8A Tc
    63nC @ 10V
    23ns
    10V
    ±20V
    20 ns
    49 ns
    8A
    -
    20V
    500V
    -
    -
    -
    -
    9.01mm
    10.41mm
    4.7mm
    -
    -
    Non-RoHS Compliant
    Contains Lead
    I2PAK
    500V
    6.000006g
    150°C
    -55°C
    1
    1.3nF
    850mOhm
    850 mΩ
    500V
    8A
    IRF8707PBF vs IRF840L
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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