Vishay Siliconix IRF840SPBF

Name: IRF840SPBF
Brand: Vishay Siliconix
SKU: 2479884-IRF840SPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF840SPBF

Manufacturer:: Vishay Siliconix

Ventron No:: 2479884-IRF840SPBF

Description:: MOSFET N-CH 500V 8A D2PAK

ECAD Model:

Datasheet:: IRF840SPBF

Specifications

Vishay Siliconix IRF840SPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF840SPBF.

Factory Lead Time
11 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Supplier Device Package
D2PAK
Weight
1.437803g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2009
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
SMD/SMT
Resistance
850mOhm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
3.1W Ta 125W Tc
Element Configuration
Single
Power Dissipation
3.1W
Turn On Delay Time
14 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
850mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C
8A Tc
Gate Charge (Qg) (Max) @ Vgs
63nC @ 10V
Rise Time
23ns
Drain to Source Voltage (Vdss)
500V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
20 ns
Turn-Off Delay Time
49 ns
Continuous Drain Current (ID)
8A
Threshold Voltage
2V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
500V
Dual Supply Voltage
500V
Input Capacitance
1.3nF
Max Junction Temperature (Tj)
150°C
Drain to Source Resistance
850mOhm
Rds On Max
850 mΩ
Nominal Vgs
4 V
Height
5.08mm
Length
10.67mm
Width
9.65mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRF840SPBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 8A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 49 ns.This device has a drain-to-source resistance of 850mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2V, which means that it will not activate any of its functions when its threshold voltage reaches 2V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IRF840SPBF Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 49 ns
single MOSFETs transistor is 850mOhm
a threshold voltage of 2V
a 500V drain to source voltage (Vdss)

IRF840SPBF Applications
There are a lot of Vishay Siliconix
IRF840SPBF applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

IRF840SPBF More Descriptions

Single N-Channel 400 V 0.85 Ohms Surface Mount Power Mosfet - D2PAK
Trans MOSFET N-CH 500V 8A 3-Pin(2 Tab) D2PAK
N Channel Mosfet, 500V, 8A, D2-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:8A; On Resistance Rds(On):0.85Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 8 / Drain-Source Voltage (Vds) V = 500 / ON Resistance (Rds(on)) mOhm = 850 / Gate-Source Voltage V = 20 / Fall Time ns = 20 / Rise Time ns = 23 / Turn-OFF Delay Time ns = 49 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = DDPAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 125

Product Comparison

The three parts on the right have similar specifications to IRF840SPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Termination

Resistance

Max Operating Temperature

Min Operating Temperature

Technology

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Input Capacitance

Max Junction Temperature (Tj)

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Transistor Element Material

JESD-609 Code

Number of Terminations

Terminal Finish

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Configuration

Operating Mode

Case Connection

Transistor Application

DS Breakdown Voltage-Min

Voltage - Rated DC

Current Rating

View Compare
IRF840SPBF

Vishay Siliconix

11 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

D2PAK

1.437803g

-55°C~150°C TJ

Tube

2009

Active

1 (Unlimited)

SMD/SMT

850mOhm

150°C

-55°C

MOSFET (Metal Oxide)

1

1

3.1W Ta 125W Tc

Single

3.1W

14 ns

N-Channel

850mOhm @ 4.8A, 10V

4V @ 250μA

1300pF @ 25V

8A Tc

63nC @ 10V

23ns

500V

10V

±20V

20 ns

49 ns

8A

2V

20V

500V

500V

1.3nF

150°C

850mOhm

850 mΩ

4 V

5.08mm

10.67mm

9.65mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF830STRR

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2016

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

1

-

3.1W Ta 74W Tc

-

-

-

N-Channel

1.5 Ω @ 2.7A, 10V

4V @ 250μA

610pF @ 25V

4.5A Tc

38nC @ 10V

-

500V

10V

±20V

-

-

4.5A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

SILICON

e0

2

TIN LEAD

FET General Purpose Power

SINGLE

GULL WING

NOT SPECIFIED

unknown

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

SINGLE

ENHANCEMENT MODE

DRAIN

SWITCHING

500V

-

-

IRF840SPBF vs IRF830STRR
IRF840LCL

Vishay Siliconix

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

I2PAK

2.387001g

-55°C~150°C TJ

Tube

2016

Obsolete

1 (Unlimited)

-

-

150°C

-55°C

MOSFET (Metal Oxide)

-

1

3.1W Ta 125W Tc

Single

-

12 ns

N-Channel

850mOhm @ 4.8A, 10V

4V @ 250μA

1100pF @ 25V

8A Tc

39nC @ 10V

25ns

500V

10V

±30V

19 ns

27 ns

8A

-

30V

500V

-

1.1nF

-

850mOhm

850 mΩ

-

9.65mm

10.41mm

4.7mm

-

-

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

500V

8A

IRF840SPBF vs IRF840LCL
IRF840L

Vishay Siliconix

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

3

I2PAK

6.000006g

-55°C~150°C TJ

Tube

2016

Obsolete

1 (Unlimited)

-

-

150°C

-55°C

MOSFET (Metal Oxide)

-

1

125W Tc

Single

-

14 ns

N-Channel

850mOhm @ 4.8A, 10V

4V @ 250μA

1300pF @ 25V

8A Tc

63nC @ 10V

23ns

500V

10V

±20V

20 ns

49 ns

8A

-

20V

500V

-

1.3nF

-

850mOhm

850 mΩ

-

9.01mm

10.41mm

4.7mm

-

-

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

500V

8A

IRF840SPBF vs IRF840L

Certification

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IRF840SPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRF840SPBF DISTI #IRF840SPBF	Vishay Intertechnologies	Trans MOSFET N-CH 500V 8A 3-Pin(2 Tab) D2PAK RoHS: Compliant	619	1 $1.3755 10 $1.158 100 $0.9398 500 $0.7945 1000 $0.7179 2000 $0.6696 5000 $0.6558
IRF840SPBF DISTI #IRF840SPBF	Vishay Siliconix	MOSFET N-CH 500V 8A D2PAK RoHS: Compliant	1260	1 $1.91 50 $1.537 100 $1.3833 500 $1.07588 1000 $0.89145
IRF840SPBF DISTI #IRF840SPBF	Vishay Intertechnologies	Trans MOSFET N-CH 500V 8A 3-Pin(2 Tab) D2PAK RoHS: Compliant	2348	20 $0.8832 400 $0.8256
IRF840SPBF DISTI #IRF840SPBF	Vishay Intertechnologies	Trans MOSFET N-CH 500V 8A 3-Pin(2 Tab) D2PAK RoHS: Compliant	619	9 $1.3677 10 $1.1536 100 $0.9373 500 $0.7931
IRF840SPBF DISTI #IRF840SPBF	Vishay Intertechnologies	Trans MOSFET N-CH 500V 8A 3-Pin(2 Tab) D2PAK RoHS: Compliant	49	8 $3.2003 10 $2.1675
IRF840SPBF DISTI #IRF840SPBF	Vishay Intertechnologies	Trans MOSFET N-CH 500V 8A 3-Pin(2 Tab) D2PAK - Rai RoHS: Not Compliant	9	1 $0.9459 10 $0.8959 25 $0.8929 50 $0.8909 100 $0.7729 500 $0.6839 1000 $0.6819
IRF840SPBF DISTI #IRF840SPBF	Vishay Intertechnologies	Trans MOSFET N-CH 500V 8A 3-Pin(2 Tab) D2PAK - Bul RoHS: Not Compliant	0	1 $1.66 10 $1.39 25 $1.31 50 $1.24 100 $1.16 500 $1.1 1000 $1.05
IRF840SPBF DISTI #IRF840SPBF	Vishay Intertechnologies	N CHANNEL MOSFET, 500V, 8A, D2-PAK, Transistor Po	77	1 $1.66 10 $1.39 25 $1.31 50 $1.24 100 $1.16 500 $1.1 1000 $1.05 2500 $1.02
IRF840SPBF. DISTI #IRF840SPBF.	Vishay Intertechnologies	N CHANNEL MOSFET, 500V, 8A, D2-PAK, Transistor Po	9	1 $1.69 10 $1.42 25 $1.34 50 $1.24 100 $1.16 500 $1.1 1000 $1.05 2500 $1.02
IRF840SPBF DISTI #IRF840SPBF	Vishay Siliconix	MOSFET N-CH 500V 8A D2PAK RoHS: Compliant	0	20 $1.25
IRF840SPBF DISTI #IRF840SPBF	Vishay Intertechnologies	MOSFET N-Chan 500V 8.0 Amp RoHS: Compliant	2162	1 $1.66 10 $1.38 100 $1.07 500 $0.932 1000 $0.772 2000 $0.719 5000 $0.692 10000 $0.666
IRF840S DISTI #IRF840S	Vishay Intertechnologies	MOSFET N-Chan 500V 8.0 Amp RoHS: Not Compliant	0
IRF840SPBF DISTI #IRF840SPBF	Vishay Intertechnologies	Single N-Channel 400 V 0.85 Ohms Surface Mount Pow RoHS: Compliant	147	15 $0.92 400 $0.86
IRF840SPBF DISTI #IRF840SPBF	Vishay Siliconix		23
IRF840SPBF DISTI #IRF840SPBF	Vishay Intertechnologies	MOSFET N-CHANNEL 500V 8A D2PAK, TU	340	50 $1.03 100 $0.802
IRF840SPBF DISTI #IRF840SPBF	Vishay Intertechnologies	MOSFET N-CHANNEL 500V 8A D2PAK, PK	95	5 $1.334 50 $1.03 100 $0.802
IRF840SPBF DISTI #IRF840SPBF	Vishay Intertechnologies	RoHS: Compliant	500
IRF840SPBF DISTI #IRF840SPBF	Vishay Intertechnologies	Trans MOSFET N-CH 500V 8A 3-Pin(2 Tab) D2PAK RoHS: Compliant	49	1 $2.58 10 $1.74
IRF840SPBF DISTI #IRF840SPBF	Vishay Intertechnologies	MOSFETs RoHS: Compliant	619	10 $1.1536 100 $0.9373 500 $0.7931
IRF840SPBF DISTI #IRF840SPBF	Vishay Intertechnologies	MOSFET N-Chan 500V 8.0 Amp RoHS: Compliant	17700	50 $0.927 100 $0.82 250 $0.746 500 $0.73 1000 $0.69

IRF840S~~(10)~~
IRF840~~(46)~~
IRF84~~(54)~~
IRF8~~(69)~~
IRF~~(69)~~

Vishay Siliconix IRF840SPBF

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