IRF840S

Vishay Siliconix IRF840S

Part Number:
IRF840S
Manufacturer:
Vishay Siliconix
Ventron No:
2488281-IRF840S
Description:
MOSFET N-CH 500V 8A D2PAK
ECAD Model:
Datasheet:
IRF840S

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Specifications
Vishay Siliconix IRF840S technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF840S.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Supplier Device Package
    D2PAK
  • Weight
    1.437803g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2016
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    500V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    8A
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    3.1W Ta 125W Tc
  • Element Configuration
    Single
  • Power Dissipation
    3.1W
  • Turn On Delay Time
    14 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    850mOhm @ 4.8A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1300pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    8A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    63nC @ 10V
  • Rise Time
    23ns
  • Drain to Source Voltage (Vdss)
    500V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    20 ns
  • Turn-Off Delay Time
    49 ns
  • Continuous Drain Current (ID)
    8A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    500V
  • Input Capacitance
    1.3nF
  • Drain to Source Resistance
    850mOhm
  • Rds On Max
    850 mΩ
  • Height
    4.83mm
  • Length
    10.67mm
  • Width
    9.65mm
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRF840S Overview
A device's maximum input capacitance is 1300pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 8A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 49 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 850mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IRF840S Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 49 ns
single MOSFETs transistor is 850mOhm
a 500V drain to source voltage (Vdss)


IRF840S Applications
There are a lot of Vishay Siliconix
IRF840S applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRF840S More Descriptions
Trans MOSFET N-CH 500V 8A 3-Pin (2 Tab) SMD-220
500V 8A SINGLE N-CHANNEL GPP SMB 3.0A 400V ROHS 3KFrench Electronic Distributor since 1988
MOSFET, N D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:8A; Resistance, Rds On:0.85ohm; Case Style:TO-263; Termination Type:SMD; Current, Idm Pulse:32A; Power Dissipation:125W; Power Dissipation on 1 Sq. PCB:3.1W; Power, Pd:125W; SMD Marking:IRF840S; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Voltage, Vds:500V; Voltage, Vds Max:500V; Voltage, Vgs th Max:4V
Product Comparison
The three parts on the right have similar specifications to IRF840S.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Series
    Subcategory
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Configuration
    View Compare
  • IRF840S
    IRF840S
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    D2PAK
    1.437803g
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    500V
    MOSFET (Metal Oxide)
    8A
    1
    1
    3.1W Ta 125W Tc
    Single
    3.1W
    14 ns
    N-Channel
    850mOhm @ 4.8A, 10V
    4V @ 250μA
    1300pF @ 25V
    8A Tc
    63nC @ 10V
    23ns
    500V
    10V
    ±20V
    20 ns
    49 ns
    8A
    20V
    500V
    1.3nF
    850mOhm
    850 mΩ
    4.83mm
    10.67mm
    9.65mm
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
  • IRF8302MTR1PBF
    -
    Surface Mount
    DirectFET™ Isometric MX
    -
    DIRECTFET™ MX
    -
    -40°C~150°C TJ
    Tape & Reel (TR)
    2013
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    2.8W Ta 104W Tc
    -
    -
    -
    N-Channel
    1.8mOhm @ 31A, 10V
    2.35V @ 150μA
    6030pF @ 15V
    31A Ta 190A Tc
    53nC @ 4.5V
    -
    30V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    HEXFET®
    -
    -
    -
    -
  • IRF8252TRPBF-1
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    2.5W Ta
    -
    -
    -
    N-Channel
    2.7m Ω @ 25A, 10V
    2.35V @ 100μA
    5305pF @ 13V
    25A Ta
    53nC @ 4.5V
    -
    25V
    4.5V 10V
    ±20V
    -
    -
    25A
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    HEXFET®
    FET General Purpose Power
    NOT SPECIFIED
    NOT SPECIFIED
    Single
  • IRF840ASTRR
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    D2PAK
    1.437803g
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    -
    MOSFET (Metal Oxide)
    -
    -
    1
    3.1W Ta 125W Tc
    Single
    -
    11 ns
    N-Channel
    850mOhm @ 4.8A, 10V
    4V @ 250μA
    1018pF @ 25V
    8A Tc
    38nC @ 10V
    23ns
    500V
    10V
    ±30V
    19 ns
    26 ns
    8A
    30V
    500V
    1.018nF
    850mOhm
    850 mΩ
    4.83mm
    10.67mm
    9.65mm
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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