Vishay Siliconix IRF840S
- Part Number:
- IRF840S
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2488281-IRF840S
- Description:
- MOSFET N-CH 500V 8A D2PAK
- Datasheet:
- IRF840S
Vishay Siliconix IRF840S technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF840S.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Supplier Device PackageD2PAK
- Weight1.437803g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC500V
- TechnologyMOSFET (Metal Oxide)
- Current Rating8A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max3.1W Ta 125W Tc
- Element ConfigurationSingle
- Power Dissipation3.1W
- Turn On Delay Time14 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs850mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1300pF @ 25V
- Current - Continuous Drain (Id) @ 25°C8A Tc
- Gate Charge (Qg) (Max) @ Vgs63nC @ 10V
- Rise Time23ns
- Drain to Source Voltage (Vdss)500V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)20 ns
- Turn-Off Delay Time49 ns
- Continuous Drain Current (ID)8A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage500V
- Input Capacitance1.3nF
- Drain to Source Resistance850mOhm
- Rds On Max850 mΩ
- Height4.83mm
- Length10.67mm
- Width9.65mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRF840S Overview
A device's maximum input capacitance is 1300pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 8A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 49 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 850mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRF840S Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 49 ns
single MOSFETs transistor is 850mOhm
a 500V drain to source voltage (Vdss)
IRF840S Applications
There are a lot of Vishay Siliconix
IRF840S applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 1300pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 8A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 49 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 850mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRF840S Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 49 ns
single MOSFETs transistor is 850mOhm
a 500V drain to source voltage (Vdss)
IRF840S Applications
There are a lot of Vishay Siliconix
IRF840S applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRF840S More Descriptions
Trans MOSFET N-CH 500V 8A 3-Pin (2 Tab) SMD-220
500V 8A SINGLE N-CHANNEL GPP SMB 3.0A 400V ROHS 3KFrench Electronic Distributor since 1988
MOSFET, N D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:8A; Resistance, Rds On:0.85ohm; Case Style:TO-263; Termination Type:SMD; Current, Idm Pulse:32A; Power Dissipation:125W; Power Dissipation on 1 Sq. PCB:3.1W; Power, Pd:125W; SMD Marking:IRF840S; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Voltage, Vds:500V; Voltage, Vds Max:500V; Voltage, Vgs th Max:4V
500V 8A SINGLE N-CHANNEL GPP SMB 3.0A 400V ROHS 3K
MOSFET, N D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:8A; Resistance, Rds On:0.85ohm; Case Style:TO-263; Termination Type:SMD; Current, Idm Pulse:32A; Power Dissipation:125W; Power Dissipation on 1 Sq. PCB:3.1W; Power, Pd:125W; SMD Marking:IRF840S; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Voltage, Vds:500V; Voltage, Vds Max:500V; Voltage, Vgs th Max:4V
The three parts on the right have similar specifications to IRF840S.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRoHS StatusLead FreeSeriesSubcategoryPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)ConfigurationView Compare
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IRF840SSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3D2PAK1.437803g-55°C~150°C TJTube2016Obsolete1 (Unlimited)150°C-55°C500VMOSFET (Metal Oxide)8A113.1W Ta 125W TcSingle3.1W14 nsN-Channel850mOhm @ 4.8A, 10V4V @ 250μA1300pF @ 25V8A Tc63nC @ 10V23ns500V10V±20V20 ns49 ns8A20V500V1.3nF850mOhm850 mΩ4.83mm10.67mm9.65mmNon-RoHS CompliantContains Lead------
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-Surface MountDirectFET™ Isometric MX-DIRECTFET™ MX--40°C~150°C TJTape & Reel (TR)2013Obsolete1 (Unlimited)---MOSFET (Metal Oxide)---2.8W Ta 104W Tc---N-Channel1.8mOhm @ 31A, 10V2.35V @ 150μA6030pF @ 15V31A Ta 190A Tc53nC @ 4.5V-30V4.5V 10V±20V-------------HEXFET®----
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)----55°C~150°C TJTape & Reel (TR)2008Obsolete1 (Unlimited)---MOSFET (Metal Oxide)---2.5W Ta---N-Channel2.7m Ω @ 25A, 10V2.35V @ 100μA5305pF @ 13V25A Ta53nC @ 4.5V-25V4.5V 10V±20V--25A--------RoHS Compliant-HEXFET®FET General Purpose PowerNOT SPECIFIEDNOT SPECIFIEDSingle
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3D2PAK1.437803g-55°C~150°C TJTape & Reel (TR)2016Obsolete1 (Unlimited)150°C-55°C-MOSFET (Metal Oxide)--13.1W Ta 125W TcSingle-11 nsN-Channel850mOhm @ 4.8A, 10V4V @ 250μA1018pF @ 25V8A Tc38nC @ 10V23ns500V10V±30V19 ns26 ns8A30V500V1.018nF850mOhm850 mΩ4.83mm10.67mm9.65mmNon-RoHS Compliant------
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