Vishay Siliconix IRF840

Name: IRF840
Brand: Vishay Siliconix
SKU: 2488250-IRF840
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF840

Manufacturer:: Vishay Siliconix

Ventron No:: 2488250-IRF840

Description:: MOSFET N-CH 500V 8A TO-220AB

ECAD Model:

Datasheet:: IRF840, SiHF840 IRF840

Specifications

Vishay Siliconix IRF840 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF840.

Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
125W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
850m Ω @ 4.8A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1.3pF @ 25V
Current - Continuous Drain (Id) @ 25°C
8A Tc
Gate Charge (Qg) (Max) @ Vgs
63nC @ 10V
Drain to Source Voltage (Vdss)
500V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
JEDEC-95 Code
TO-220AB
Drain Current-Max (Abs) (ID)
8A
Drain-source On Resistance-Max
0.85Ohm
Pulsed Drain Current-Max (IDM)
32A
DS Breakdown Voltage-Min
500V
RoHS Status
Non-RoHS Compliant

Description

IRF840 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1.3pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 8A.A maximum pulsed drain current of 32A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IRF840 Features
based on its rated peak drain current 32A.
a 500V drain to source voltage (Vdss)

IRF840 Applications
There are a lot of Rochester Electronics, LLC
IRF840 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

Product Comparison

The three parts on the right have similar specifications to IRF840.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

RoHS Status

Mount

Number of Pins

Published

Subcategory

Terminal Form

Pin Count

Continuous Drain Current (ID)

Supplier Device Package

Weight

Max Operating Temperature

Min Operating Temperature

Number of Channels

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Threshold Voltage

Gate to Source Voltage (Vgs)

Input Capacitance

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

Voltage - Rated DC

Current Rating

Drain to Source Breakdown Voltage

Lead Free

View Compare
IRF840

Vishay Siliconix

Through Hole

TO-220-3

NO

SILICON

-55°C~150°C TJ

Tube

e0

no

Obsolete

1 (Unlimited)

3

TIN LEAD

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

unknown

NOT SPECIFIED

R-PSFM-T3

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

125W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

850m Ω @ 4.8A, 10V

4V @ 250μA

1.3pF @ 25V

8A Tc

63nC @ 10V

500V

10V

±20V

TO-220AB

8A

0.85Ohm

32A

500V

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF830STRR

Vishay Siliconix

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e0

-

Obsolete

1 (Unlimited)

2

TIN LEAD

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

unknown

NOT SPECIFIED

R-PSSO-G2

Not Qualified

1

SINGLE

3.1W Ta 74W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

1.5 Ω @ 2.7A, 10V

4V @ 250μA

610pF @ 25V

4.5A Tc

38nC @ 10V

500V

10V

±20V

-

-

-

-

500V

Non-RoHS Compliant

Surface Mount

3

2016

FET General Purpose Power

GULL WING

4

4.5A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF840 vs IRF830STRR
IRF820A

Vishay Siliconix

Through Hole

TO-220-3

-

-

-55°C~150°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

-

50W Tc

-

-

N-Channel

-

3Ohm @ 1.5A, 10V

4.5V @ 250μA

340pF @ 25V

2.5A Tc

17nC @ 10V

500V

10V

±30V

-

-

-

-

-

Non-RoHS Compliant

Through Hole

3

2011

-

-

-

2.5A

TO-220AB

6.000006g

150°C

-55°C

1

Single

50W

8.1 ns

12ns

13 ns

16 ns

4.5V

30V

340pF

3Ohm

3 Ω

4.5 V

9.01mm

10.41mm

4.7mm

Unknown

No

-

-

-

-

IRF840 vs IRF820A
IRF840L

Vishay Siliconix

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~150°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

125W Tc

-

-

N-Channel

-

850mOhm @ 4.8A, 10V

4V @ 250μA

1300pF @ 25V

8A Tc

63nC @ 10V

500V

10V

±20V

-

-

-

-

-

Non-RoHS Compliant

Through Hole

3

2016

-

-

-

8A

I2PAK

6.000006g

150°C

-55°C

1

Single

-

14 ns

23ns

20 ns

49 ns

-

20V

1.3nF

850mOhm

850 mΩ

-

9.01mm

10.41mm

4.7mm

-

-

500V

8A

500V

Contains Lead

IRF840 vs IRF840L