Vishay Siliconix IRF830APBF
- Part Number:
- IRF830APBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2479949-IRF830APBF
- Description:
- MOSFET N-CH 500V 5A TO-220AB
- Datasheet:
- IRF830APBF
Vishay Siliconix IRF830APBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF830APBF.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Weight6.000006g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2008
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance1.4Ohm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC500V
- TechnologyMOSFET (Metal Oxide)
- Current Rating5A
- Number of Elements1
- Number of Channels1
- Voltage500V
- Power Dissipation-Max74W Tc
- Element ConfigurationSingle
- Current5A
- Power Dissipation74W
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs1.4Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id4.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds620pF @ 25V
- Current - Continuous Drain (Id) @ 25°C5A Tc
- Gate Charge (Qg) (Max) @ Vgs24nC @ 10V
- Rise Time21ns
- Drain to Source Voltage (Vdss)500V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)15 ns
- Turn-Off Delay Time21 ns
- Continuous Drain Current (ID)5A
- Threshold Voltage4.5V
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage500V
- Input Capacitance620pF
- Recovery Time650 ns
- Drain to Source Resistance1.4Ohm
- Rds On Max1.4 Ω
- Nominal Vgs4.5 V
- Height9.01mm
- Length10.41mm
- Width4.7mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF830APBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 620pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 21 ns.This device has a drain-to-source resistance of 1.4Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In this case, the threshold voltage of the transistor is 4.5V, which means that it will not activate any of its functions when its threshold voltage reaches 4.5V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF830APBF Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 1.4Ohm
a threshold voltage of 4.5V
a 500V drain to source voltage (Vdss)
IRF830APBF Applications
There are a lot of Vishay Siliconix
IRF830APBF applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 620pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 21 ns.This device has a drain-to-source resistance of 1.4Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In this case, the threshold voltage of the transistor is 4.5V, which means that it will not activate any of its functions when its threshold voltage reaches 4.5V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF830APBF Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 1.4Ohm
a threshold voltage of 4.5V
a 500V drain to source voltage (Vdss)
IRF830APBF Applications
There are a lot of Vishay Siliconix
IRF830APBF applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRF830APBF More Descriptions
Single N-Channel 500 V 1.4 Ohms Flange Mount Power Mosfet - TO-220-3
Trans MOSFET N-CH 500V 5A 3-Pin(3 Tab) TO-220AB / MOSFET N-CH 500V 5A TO-220AB
MOSFET N-CH 500V 5A TO-220AB | Siliconix / Vishay IRF830APBF
Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 500V, 5A, To-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V; Msl:- Rohs Compliant: Yes |Vishay IRF830APBF.
MOSFET, N, 500V, 5A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.5V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:5A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.7°C/W; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:74W; Power Dissipation Pd:74W; Pulse Current Idm:20A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Trans MOSFET N-CH 500V 5A 3-Pin(3 Tab) TO-220AB / MOSFET N-CH 500V 5A TO-220AB
MOSFET N-CH 500V 5A TO-220AB | Siliconix / Vishay IRF830APBF
Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 500V, 5A, To-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V; Msl:- Rohs Compliant: Yes |Vishay IRF830APBF.
MOSFET, N, 500V, 5A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.5V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:5A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.7°C/W; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:74W; Power Dissipation Pd:74W; Pulse Current Idm:20A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
The three parts on the right have similar specifications to IRF830APBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsVoltagePower Dissipation-MaxElement ConfigurationCurrentPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSeriesSubcategoryPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)ConfigurationView Compare
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IRF830APBF12 WeeksThrough HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~150°C TJTube2008Active1 (Unlimited)1.4Ohm150°C-55°C500VMOSFET (Metal Oxide)5A11500V74W TcSingle5A74W10 nsN-Channel1.4Ohm @ 3A, 10V4.5V @ 250μA620pF @ 25V5A Tc24nC @ 10V21ns500V10V±30V15 ns21 ns5A4.5V30V500V620pF650 ns1.4Ohm1.4 Ω4.5 V9.01mm10.41mm4.7mmUnknownNoROHS3 CompliantLead Free------
-
-Surface MountSurface MountDirectFET™ Isometric MX7DIRECTFET™ MX--40°C~150°C TJTape & Reel (TR)2013Obsolete1 (Unlimited)-150°C-40°C-MOSFET (Metal Oxide)-1--2.8W Ta 100W Tc--2.8W16 nsN-Channel2.2mOhm @ 28A, 10V2.35V @ 100μA4700pF @ 15V28A Ta 170A Tc42nC @ 4.5V22ns30V4.5V 10V±20V13 ns19 ns170A-20V30V4.7nF-3.2mOhm2.2 mΩ-----NoRoHS Compliant-HEXFET®----
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--Surface MountDirectFET™ Isometric MX-DIRECTFET™ MX--40°C~150°C TJTape & Reel (TR)2013Obsolete1 (Unlimited)----MOSFET (Metal Oxide)----2.8W Ta 104W Tc----N-Channel1.8mOhm @ 31A, 10V2.35V @ 150μA6030pF @ 15V31A Ta 190A Tc53nC @ 4.5V-30V4.5V 10V±20V------------------HEXFET®----
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-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)----55°C~150°C TJTape & Reel (TR)2008Obsolete1 (Unlimited)----MOSFET (Metal Oxide)----2.5W Ta----N-Channel2.7m Ω @ 25A, 10V2.35V @ 100μA5305pF @ 13V25A Ta53nC @ 4.5V-25V4.5V 10V±20V--25A-------------RoHS Compliant-HEXFET®FET General Purpose PowerNOT SPECIFIEDNOT SPECIFIEDSingle
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