IRF830APBF

Vishay Siliconix IRF830APBF

Part Number:
IRF830APBF
Manufacturer:
Vishay Siliconix
Ventron No:
2479949-IRF830APBF
Description:
MOSFET N-CH 500V 5A TO-220AB
ECAD Model:
Datasheet:
IRF830APBF

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Specifications
Vishay Siliconix IRF830APBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF830APBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-220AB
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2008
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    1.4Ohm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    500V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    5A
  • Number of Elements
    1
  • Number of Channels
    1
  • Voltage
    500V
  • Power Dissipation-Max
    74W Tc
  • Element Configuration
    Single
  • Current
    5A
  • Power Dissipation
    74W
  • Turn On Delay Time
    10 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    1.4Ohm @ 3A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    620pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    5A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    24nC @ 10V
  • Rise Time
    21ns
  • Drain to Source Voltage (Vdss)
    500V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    15 ns
  • Turn-Off Delay Time
    21 ns
  • Continuous Drain Current (ID)
    5A
  • Threshold Voltage
    4.5V
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    500V
  • Input Capacitance
    620pF
  • Recovery Time
    650 ns
  • Drain to Source Resistance
    1.4Ohm
  • Rds On Max
    1.4 Ω
  • Nominal Vgs
    4.5 V
  • Height
    9.01mm
  • Length
    10.41mm
  • Width
    4.7mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRF830APBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 620pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 21 ns.This device has a drain-to-source resistance of 1.4Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In this case, the threshold voltage of the transistor is 4.5V, which means that it will not activate any of its functions when its threshold voltage reaches 4.5V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IRF830APBF Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 1.4Ohm
a threshold voltage of 4.5V
a 500V drain to source voltage (Vdss)


IRF830APBF Applications
There are a lot of Vishay Siliconix
IRF830APBF applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRF830APBF More Descriptions
Single N-Channel 500 V 1.4 Ohms Flange Mount Power Mosfet - TO-220-3
Trans MOSFET N-CH 500V 5A 3-Pin(3 Tab) TO-220AB / MOSFET N-CH 500V 5A TO-220AB
MOSFET N-CH 500V 5A TO-220AB | Siliconix / Vishay IRF830APBF
Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 500V, 5A, To-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V; Msl:- Rohs Compliant: Yes |Vishay IRF830APBF.
MOSFET, N, 500V, 5A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.5V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:5A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.7°C/W; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:74W; Power Dissipation Pd:74W; Pulse Current Idm:20A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Product Comparison
The three parts on the right have similar specifications to IRF830APBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Number of Channels
    Voltage
    Power Dissipation-Max
    Element Configuration
    Current
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Recovery Time
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Series
    Subcategory
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Configuration
    View Compare
  • IRF830APBF
    IRF830APBF
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    6.000006g
    -55°C~150°C TJ
    Tube
    2008
    Active
    1 (Unlimited)
    1.4Ohm
    150°C
    -55°C
    500V
    MOSFET (Metal Oxide)
    5A
    1
    1
    500V
    74W Tc
    Single
    5A
    74W
    10 ns
    N-Channel
    1.4Ohm @ 3A, 10V
    4.5V @ 250μA
    620pF @ 25V
    5A Tc
    24nC @ 10V
    21ns
    500V
    10V
    ±30V
    15 ns
    21 ns
    5A
    4.5V
    30V
    500V
    620pF
    650 ns
    1.4Ohm
    1.4 Ω
    4.5 V
    9.01mm
    10.41mm
    4.7mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
  • IRF8304MTR1PBF
    -
    Surface Mount
    Surface Mount
    DirectFET™ Isometric MX
    7
    DIRECTFET™ MX
    -
    -40°C~150°C TJ
    Tape & Reel (TR)
    2013
    Obsolete
    1 (Unlimited)
    -
    150°C
    -40°C
    -
    MOSFET (Metal Oxide)
    -
    1
    -
    -
    2.8W Ta 100W Tc
    -
    -
    2.8W
    16 ns
    N-Channel
    2.2mOhm @ 28A, 10V
    2.35V @ 100μA
    4700pF @ 15V
    28A Ta 170A Tc
    42nC @ 4.5V
    22ns
    30V
    4.5V 10V
    ±20V
    13 ns
    19 ns
    170A
    -
    20V
    30V
    4.7nF
    -
    3.2mOhm
    2.2 mΩ
    -
    -
    -
    -
    -
    No
    RoHS Compliant
    -
    HEXFET®
    -
    -
    -
    -
  • IRF8302MTR1PBF
    -
    -
    Surface Mount
    DirectFET™ Isometric MX
    -
    DIRECTFET™ MX
    -
    -40°C~150°C TJ
    Tape & Reel (TR)
    2013
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    2.8W Ta 104W Tc
    -
    -
    -
    -
    N-Channel
    1.8mOhm @ 31A, 10V
    2.35V @ 150μA
    6030pF @ 15V
    31A Ta 190A Tc
    53nC @ 4.5V
    -
    30V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    HEXFET®
    -
    -
    -
    -
  • IRF8252TRPBF-1
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    2.5W Ta
    -
    -
    -
    -
    N-Channel
    2.7m Ω @ 25A, 10V
    2.35V @ 100μA
    5305pF @ 13V
    25A Ta
    53nC @ 4.5V
    -
    25V
    4.5V 10V
    ±20V
    -
    -
    25A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    HEXFET®
    FET General Purpose Power
    NOT SPECIFIED
    NOT SPECIFIED
    Single
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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