IRF830A

Vishay Siliconix IRF830A

Part Number:
IRF830A
Manufacturer:
Vishay Siliconix
Ventron No:
2850750-IRF830A
Description:
MOSFET N-CH 500V 5A TO-220AB
ECAD Model:
Datasheet:
IRF830A

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Vishay Siliconix IRF830A technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF830A.
  • Factory Lead Time
    49 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-220AB
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2003
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    500V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    5A
  • Number of Channels
    1
  • Power Dissipation-Max
    74W Tc
  • Element Configuration
    Single
  • Power Dissipation
    74W
  • Turn On Delay Time
    10 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    1.4Ohm @ 3A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    620pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    5A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    24nC @ 10V
  • Rise Time
    21ns
  • Drain to Source Voltage (Vdss)
    500V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    15 ns
  • Turn-Off Delay Time
    21 ns
  • Continuous Drain Current (ID)
    5A
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    500V
  • Input Capacitance
    620pF
  • Drain to Source Resistance
    1.4Ohm
  • Rds On Max
    1.4 Ω
  • Height
    9.01mm
  • Length
    10.41mm
  • Width
    4.7mm
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRF830A Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 620pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 21 ns.This device has a drain-to-source resistance of 1.4Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IRF830A Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 1.4Ohm
a 500V drain to source voltage (Vdss)


IRF830A Applications
There are a lot of Vishay Siliconix
IRF830A applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRF830A More Descriptions
500V 5A SINGLE N-CHANNEL HEXFET POWER MOSFET IN A SOMOSFET N-CH 500V 5A TO-220AB
MOSFET N-CH 500V 5A TO220AB
MOSFET N-CHANNEL 500V
Product Comparison
The three parts on the right have similar specifications to IRF830A.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Series
    Subcategory
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Configuration
    View Compare
  • IRF830A
    IRF830A
    49 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    6.000006g
    -55°C~150°C TJ
    Tube
    2003
    Active
    1 (Unlimited)
    150°C
    -55°C
    500V
    MOSFET (Metal Oxide)
    5A
    1
    74W Tc
    Single
    74W
    10 ns
    N-Channel
    1.4Ohm @ 3A, 10V
    4.5V @ 250μA
    620pF @ 25V
    5A Tc
    24nC @ 10V
    21ns
    500V
    10V
    ±30V
    15 ns
    21 ns
    5A
    30V
    500V
    620pF
    1.4Ohm
    1.4 Ω
    9.01mm
    10.41mm
    4.7mm
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
  • IRF8302MTR1PBF
    -
    -
    Surface Mount
    DirectFET™ Isometric MX
    -
    DIRECTFET™ MX
    -
    -40°C~150°C TJ
    Tape & Reel (TR)
    2013
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    2.8W Ta 104W Tc
    -
    -
    -
    N-Channel
    1.8mOhm @ 31A, 10V
    2.35V @ 150μA
    6030pF @ 15V
    31A Ta 190A Tc
    53nC @ 4.5V
    -
    30V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    HEXFET®
    -
    -
    -
    -
  • IRF8252TRPBF-1
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    2.5W Ta
    -
    -
    -
    N-Channel
    2.7m Ω @ 25A, 10V
    2.35V @ 100μA
    5305pF @ 13V
    25A Ta
    53nC @ 4.5V
    -
    25V
    4.5V 10V
    ±20V
    -
    -
    25A
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    HEXFET®
    FET General Purpose Power
    NOT SPECIFIED
    NOT SPECIFIED
    Single
  • IRF840ASTRR
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    D2PAK
    1.437803g
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    -
    MOSFET (Metal Oxide)
    -
    1
    3.1W Ta 125W Tc
    Single
    -
    11 ns
    N-Channel
    850mOhm @ 4.8A, 10V
    4V @ 250μA
    1018pF @ 25V
    8A Tc
    38nC @ 10V
    23ns
    500V
    10V
    ±30V
    19 ns
    26 ns
    8A
    30V
    500V
    1.018nF
    850mOhm
    850 mΩ
    4.83mm
    10.67mm
    9.65mm
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • 09 November 2023

    2N3904 NPN Transistor: Equivalents, Manufacturer, Working Principle and Applications

    Ⅰ. Overview of 2N3904 transistorⅡ. Manufacturer of 2N3904 transistorⅢ. Symbol, footprint and pin configuration of 2N3904 transistorⅣ. What are the features of 2N3904 transistor?Ⅴ. Technical parameters of 2N3904...
  • 10 November 2023

    STM32F405RGT6 Microcontroller Footprint, Power Circuit, Software Development and More

    Ⅰ. What is STM32F405RGT6 microcontroller?Ⅱ. Symbol, footprint and pin configuration of STM32F405RGT6 microcontrollerⅢ. Features of STM32F405RGT6 microcontrollerⅣ. Technical parameters of STM32F405RGT6 microcontrollerⅤ. Power circuit of STM32F405RGT6 microcontrollerⅥ. Dimensions...
  • 10 November 2023

    1N4001 and 1N4148 Diodes: What's the Difference?

    Ⅰ. What is a diode?Ⅱ.Overview of 1N4001 rectifier diodeⅢ. Overview of 1N4148 switching diodeⅣ. 1N4001 vs 1N4148: SymbolⅤ. 1N4001 vs 1N4148: FeaturesⅥ. 1N4001 vs 1N4148: Technical parametersⅦ. 1N4001...
  • 13 November 2023

    Do You Know About the NE555P Timer?

    Ⅰ. NE555P descriptionⅡ. What are the features of NE555P timer?Ⅲ. Symbol, footprint and pin configuration of NE555P timerⅣ. What are the applications of NE555P timer?Ⅴ. Technical parameters of...
  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.