Vishay Siliconix IRF830A
- Part Number:
- IRF830A
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2850750-IRF830A
- Description:
- MOSFET N-CH 500V 5A TO-220AB
- Datasheet:
- IRF830A
Vishay Siliconix IRF830A technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF830A.
- Factory Lead Time49 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Weight6.000006g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2003
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC500V
- TechnologyMOSFET (Metal Oxide)
- Current Rating5A
- Number of Channels1
- Power Dissipation-Max74W Tc
- Element ConfigurationSingle
- Power Dissipation74W
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs1.4Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id4.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds620pF @ 25V
- Current - Continuous Drain (Id) @ 25°C5A Tc
- Gate Charge (Qg) (Max) @ Vgs24nC @ 10V
- Rise Time21ns
- Drain to Source Voltage (Vdss)500V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)15 ns
- Turn-Off Delay Time21 ns
- Continuous Drain Current (ID)5A
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage500V
- Input Capacitance620pF
- Drain to Source Resistance1.4Ohm
- Rds On Max1.4 Ω
- Height9.01mm
- Length10.41mm
- Width4.7mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRF830A Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 620pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 21 ns.This device has a drain-to-source resistance of 1.4Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF830A Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 1.4Ohm
a 500V drain to source voltage (Vdss)
IRF830A Applications
There are a lot of Vishay Siliconix
IRF830A applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 620pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 21 ns.This device has a drain-to-source resistance of 1.4Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF830A Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 1.4Ohm
a 500V drain to source voltage (Vdss)
IRF830A Applications
There are a lot of Vishay Siliconix
IRF830A applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRF830A More Descriptions
500V 5A SINGLE N-CHANNEL HEXFET POWER MOSFET IN A SOMOSFET N-CH 500V 5A TO-220AB
MOSFET N-CH 500V 5A TO220AB
MOSFET N-CHANNEL 500V
MOSFET N-CH 500V 5A TO220AB
MOSFET N-CHANNEL 500V
The three parts on the right have similar specifications to IRF830A.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRoHS StatusLead FreeSeriesSubcategoryPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)ConfigurationView Compare
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IRF830A49 WeeksThrough HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~150°C TJTube2003Active1 (Unlimited)150°C-55°C500VMOSFET (Metal Oxide)5A174W TcSingle74W10 nsN-Channel1.4Ohm @ 3A, 10V4.5V @ 250μA620pF @ 25V5A Tc24nC @ 10V21ns500V10V±30V15 ns21 ns5A30V500V620pF1.4Ohm1.4 Ω9.01mm10.41mm4.7mmNon-RoHS CompliantContains Lead------
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--Surface MountDirectFET™ Isometric MX-DIRECTFET™ MX--40°C~150°C TJTape & Reel (TR)2013Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--2.8W Ta 104W Tc---N-Channel1.8mOhm @ 31A, 10V2.35V @ 150μA6030pF @ 15V31A Ta 190A Tc53nC @ 4.5V-30V4.5V 10V±20V-------------HEXFET®----
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-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)----55°C~150°C TJTape & Reel (TR)2008Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--2.5W Ta---N-Channel2.7m Ω @ 25A, 10V2.35V @ 100μA5305pF @ 13V25A Ta53nC @ 4.5V-25V4.5V 10V±20V--25A--------RoHS Compliant-HEXFET®FET General Purpose PowerNOT SPECIFIEDNOT SPECIFIEDSingle
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-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3D2PAK1.437803g-55°C~150°C TJTape & Reel (TR)2016Obsolete1 (Unlimited)150°C-55°C-MOSFET (Metal Oxide)-13.1W Ta 125W TcSingle-11 nsN-Channel850mOhm @ 4.8A, 10V4V @ 250μA1018pF @ 25V8A Tc38nC @ 10V23ns500V10V±30V19 ns26 ns8A30V500V1.018nF850mOhm850 mΩ4.83mm10.67mm9.65mmNon-RoHS Compliant------
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