Infineon Technologies IRF8302MTRPBF

Name: IRF8302MTRPBF
Brand: Infineon Technologies
SKU: 2482866-IRF8302MTRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF8302MTRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2482866-IRF8302MTRPBF

Description:: MOSFET N-CH 30V 31A MX

ECAD Model:

Datasheet:: IRF8302MTRPBF

Specifications

Infineon Technologies IRF8302MTRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF8302MTRPBF.

Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric MX
Number of Pins
7
Transistor Element Material
SILICON
Manufacturer Package Identifier
MG-WDSON-5
Operating Temperature
-40°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2006
JESD-609 Code
e1
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
BOTTOM
JESD-30 Code
R-XBCC-N3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Number of Channels
1
Power Dissipation-Max
2.8W Ta 104W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.8W
Case Connection
DRAIN
Turn On Delay Time
22 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.8m Ω @ 31A, 10V
Vgs(th) (Max) @ Id
2.35V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds
6030pF @ 15V
Current - Continuous Drain (Id) @ 25°C
31A Ta 190A Tc
Gate Charge (Qg) (Max) @ Vgs
53nC @ 4.5V
Rise Time
37ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
15 ns
Turn-Off Delay Time
20 ns
Continuous Drain Current (ID)
31A
Threshold Voltage
1.35V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
250A
Avalanche Energy Rating (Eas)
260 mJ
Max Junction Temperature (Tj)
150°C
Height
700μm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

IRF8302MTRPBF Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 260 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 6030pF @ 15V.This device has a continuous drain current (ID) of [31A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 20 ns.A maximum pulsed drain current of 250A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 22 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 1.35V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

IRF8302MTRPBF Features
the avalanche energy rating (Eas) is 260 mJ
a continuous drain current (ID) of 31A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 250A.
a threshold voltage of 1.35V

IRF8302MTRPBF Applications
There are a lot of Infineon Technologies
IRF8302MTRPBF applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

IRF8302MTRPBF More Descriptions

Mosfet, N-Ch, 30V, 190A, 150Deg C, 104W Rohs Compliant: Yes |Infineon IRF8302MTRPBF
A 30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 31 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
Benefits: RoHS Compliant; Low Profile (less than 0.7 mm); Dual Sided Cooling; Low Conduction Losses; Optimized for High Frequency Switching; Low Package Inductance; Integrated Monolithic Sckottky Diode | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load SyncFET

Product Comparison

The three parts on the right have similar specifications to IRF8302MTRPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Manufacturer Package Identifier

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Terminal Position

JESD-30 Code

Number of Elements

Configuration

Number of Channels

Power Dissipation-Max

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Max Junction Temperature (Tj)

Height

Radiation Hardening

RoHS Status

Supplier Device Package

Drain to Source Voltage (Vdss)

Weight

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Current Rating

Element Configuration

Input Capacitance

Drain to Source Resistance

Rds On Max

Length

Width

Lead Free

Vgs(th) (Max) @ Id:

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

View Compare
IRF8302MTRPBF

Infineon Technologies

12 Weeks

Surface Mount

Surface Mount

DirectFET™ Isometric MX

7

SILICON

MG-WDSON-5

-40°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2006

e1

Active

1 (Unlimited)

3

EAR99

Tin/Silver/Copper (Sn/Ag/Cu)

FET General Purpose Power

MOSFET (Metal Oxide)

BOTTOM

R-XBCC-N3

1

SINGLE WITH BUILT-IN DIODE

1

2.8W Ta 104W Tc

ENHANCEMENT MODE

2.8W

DRAIN

22 ns

N-Channel

SWITCHING

1.8m Ω @ 31A, 10V

2.35V @ 150μA

6030pF @ 15V

31A Ta 190A Tc

53nC @ 4.5V

37ns

4.5V 10V

±20V

15 ns

20 ns

31A

1.35V

20V

30V

250A

260 mJ

150°C

700μm

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF8302MTR1PBF

Infineon Technologies

-

-

Surface Mount

DirectFET™ Isometric MX

-

-

-

-40°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2013

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

2.8W Ta 104W Tc

-

-

-

-

N-Channel

-

1.8mOhm @ 31A, 10V

2.35V @ 150μA

6030pF @ 15V

31A Ta 190A Tc

53nC @ 4.5V

-

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

DIRECTFET™ MX

30V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF8302MTRPBF vs IRF8302MTR1PBF
IRF840L

Vishay Siliconix

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

3

-

-

-55°C~150°C TJ

Tube

-

2016

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

1

125W Tc

-

-

-

14 ns

N-Channel

-

850mOhm @ 4.8A, 10V

4V @ 250μA

1300pF @ 25V

8A Tc

63nC @ 10V

23ns

10V

±20V

20 ns

49 ns

8A

-

20V

500V

-

-

-

9.01mm

-

Non-RoHS Compliant

I2PAK

500V

6.000006g

150°C

-55°C

500V

8A

Single

1.3nF

850mOhm

850 mΩ

10.41mm

4.7mm

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF8302MTRPBF vs IRF840L
IRF820

Vishay Siliconix

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4V @ 250µA

MOSFET (Metal Oxide)

TO-220AB

-

3 Ohm @ 1.5A, 10V

50W (Tc)

Tube

TO-220-3

-55°C ~ 150°C (TJ)

Through Hole

360pF @ 25V

24nC @ 10V

N-Channel

-

500V

2.5A (Tc)

IRF8302MTRPBF vs IRF820

Certification

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Vishay Siliconix

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IRF820

Vishay Siliconix

MOSFET N-CH 500V 2.5A TO-220AB

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IRF8302~~(2)~~
IRF830~~(41)~~
IRF83~~(55)~~
IRF8~~(69)~~
IRF~~(69)~~

Part Number	Manufacturers	Description	Stock	Price
IRF8302MTRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 31A 7-Pin Direct-FET MX T/R RoHS: Compliant	1539	1 $1.7577 10 $1.545 25 $1.5394 100 $1.2565 250 $1.2433 500 $1.1573 1000 $0.985
IRF8302MTRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 30V 31A MX RoHS: Compliant	3246	1 $2.51 10 $2.268 100 $1.8227 500 $1.41766 1000 $1.17464
IRF8302MTRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 30V 31A MX RoHS: Compliant	3246	1 $2.51 10 $2.268 100 $1.8227 500 $1.41766 1000 $1.17464
IRF8302MTRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 30V 31A MX RoHS: Compliant	0	4800 $1.02245
IRF8302MTRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 31A 7-Pin Direct-FET MX T/R RoHS: Compliant	4800	4800 $0.8928 9600 $0.8582
IRF8302MTRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 31A 7-Pin Direct-FET MX T/R RoHS: Compliant	1539	7 $1.7577 10 $1.545 25 $1.5394 100 $1.2565 250 $1.2433 500 $1.1573 1000 $0.985
IRF8302MTRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 31A 7-Pin Direct-FET MX T/R RoHS: Compliant	0	4800 $1.0299 9600 $0.9929 19200 $0.9569 28800 $0.9239 48000 $0.9079
IRF8302MTRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 31A 7-Pin Direct-FET MX T/R RoHS: Compliant	0	4800 $1.1699 9600 $0.9749 19200 $0.8999 28800 $0.8349 48000 $0.7799
IRF8302MTRPBF DISTI #	Infineon Technologies AG	MOSFET 30V N-Channel HEXFET Power MOSFET RoHS: Compliant	10281	1 $2.11 10 $1.79 100 $1.43 500 $1.26 1000 $1.04 2500 $0.966
IRF8302MTRPBF DISTI #	International Rectifier	Power Field-Effect Transistor, 31A I(D), 30V, 0.00 RoHS: Compliant	9600	1 $1.2 25 $1.11 100 $1.07 500 $1.03 1000 $0.97
IRF8302MTRPBF DISTI #	Infineon Technologies AG	MOSFETs	1539	10 $1.545 25 $1.5394 100 $1.2565 250 $1.2433
IRF8302MTRPBF DISTI #	Infineon Technologies AG	MOSFETs	4800	4800 $1.09

Infineon Technologies IRF8302MTRPBF

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