Infineon Technologies IRF8010PBF
- Part Number:
- IRF8010PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2849472-IRF8010PBF
- Description:
- MOSFET N-CH 100V 80A TO-220AB
- ECAD Model:
-
- Datasheet:
- IRF8010PBF
Infineon Technologies IRF8010PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF8010PBF.
- Factory Lead Time12 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2002
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance15Ohm
- SubcategoryFET General Purpose Power
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Current Rating80A
- Number of Elements1
- Power Dissipation-Max260W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation260W
- Case ConnectionDRAIN
- Turn On Delay Time15 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs15m Ω @ 45A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3830pF @ 25V
- Current - Continuous Drain (Id) @ 25°C80A Tc
- Gate Charge (Qg) (Max) @ Vgs120nC @ 10V
- Rise Time130ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)120 ns
- Turn-Off Delay Time61 ns
- Continuous Drain Current (ID)80A
- Threshold Voltage4V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)75A
- Drain to Source Breakdown Voltage100V
- Dual Supply Voltage100V
- Recovery Time150 ns
- Nominal Vgs4 V
- Height8.763mm
- Length10.5156mm
- Width4.69mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF8010PBF Description
The IRF8010PBF has Low Gate-to-Drain Charge to Reduce and Switching Losses.The device is Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) and Fully Characterized Avalanche Voltage and Current.Typical RDS(on) = 12m?.
IRF8010PBF Applications
High frequency DC-DC converters UPS and Motor Control Lead-Free IRF8010PBF Features
Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current Typical RDS(on) = 12m?
The IRF8010PBF has Low Gate-to-Drain Charge to Reduce and Switching Losses.The device is Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) and Fully Characterized Avalanche Voltage and Current.Typical RDS(on) = 12m?.
IRF8010PBF Applications
High frequency DC-DC converters UPS and Motor Control Lead-Free IRF8010PBF Features
Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current Typical RDS(on) = 12m?
IRF8010PBF More Descriptions
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 12Milliohms;ID 80A;TO-220AB;PD 260W;-55deg
Transistor MOSFET N Channel 100 Volt 80a 3-Pin 3 Tab TO-220AB
Single N-Channel 100 V 15 mOhm 81 nC HEXFET® Power Mosfet - TO-220-3
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Trans MOSFET N-CH 100V 80A 3-Pin(3 Tab) TO-220AB - Rail/Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 260 W
Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 100V, 80A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):15mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:260W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Junction to Case Thermal Resistance A:0.57°C/W; On State resistance @ Vgs = 10V:15ohm; Package / Case:TO-220AB; Power Dissipation Pd:260W; Power Dissipation Pd:260W; Pulse Current Idm:320A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Transistor MOSFET N Channel 100 Volt 80a 3-Pin 3 Tab TO-220AB
Single N-Channel 100 V 15 mOhm 81 nC HEXFET® Power Mosfet - TO-220-3
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Trans MOSFET N-CH 100V 80A 3-Pin(3 Tab) TO-220AB - Rail/Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 260 W
Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 100V, 80A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):15mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:260W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Junction to Case Thermal Resistance A:0.57°C/W; On State resistance @ Vgs = 10V:15ohm; Package / Case:TO-220AB; Power Dissipation Pd:260W; Power Dissipation Pd:260W; Pulse Current Idm:320A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IRF8010PBF.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageDual Supply VoltageRecovery TimeNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageWeightMax Operating TemperatureMin Operating TemperatureNumber of ChannelsDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxView Compare
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IRF8010PBF12 WeeksTinThrough HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeHEXFET®2002Active1 (Unlimited)3EAR9915OhmFET General Purpose Power100VMOSFET (Metal Oxide)80A1260W TcSingleENHANCEMENT MODE260WDRAIN15 nsN-ChannelSWITCHING15m Ω @ 45A, 10V4V @ 250μA3830pF @ 25V80A Tc120nC @ 10V130ns10V±20V120 ns61 ns80A4VTO-220AB20V75A100V100V150 ns4 V8.763mm10.5156mm4.69mmNo SVHCNoROHS3 CompliantLead Free---------- -
--Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~150°C TJTape & Reel (TR)-2016Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)--3.1W Ta 125W TcSingle---11 nsN-Channel-850mOhm @ 4.8A, 10V4V @ 250μA1018pF @ 25V8A Tc38nC @ 10V23ns10V±30V19 ns26 ns8A--30V-500V---4.83mm10.67mm9.65mm--Non-RoHS Compliant-D2PAK1.437803g150°C-55°C1500V1.018nF850mOhm850 mΩ
-
--Through HoleThrough HoleTO-220-33--55°C~150°C TJTube-2011Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)-150W TcSingle-50W-8.1 nsN-Channel-3Ohm @ 1.5A, 10V4.5V @ 250μA340pF @ 25V2.5A Tc17nC @ 10V12ns10V±30V13 ns16 ns2.5A4.5V-30V----4.5 V9.01mm10.41mm4.7mmUnknownNoNon-RoHS Compliant-TO-220AB6.000006g150°C-55°C1500V340pF3Ohm3 Ω
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--Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3--55°C~150°C TJTube-2016Obsolete1 (Unlimited)----500VMOSFET (Metal Oxide)8A-125W TcSingle---14 nsN-Channel-850mOhm @ 4.8A, 10V4V @ 250μA1300pF @ 25V8A Tc63nC @ 10V23ns10V±20V20 ns49 ns8A--20V-500V---9.01mm10.41mm4.7mm--Non-RoHS CompliantContains LeadI2PAK6.000006g150°C-55°C1500V1.3nF850mOhm850 mΩ
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