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IRF40B207

Infineon Technologies IRF40B207

Part Number:
IRF40B207
Manufacturer:
Infineon Technologies
Ventron No:
2481462-IRF40B207
Description:
MOSFET N-CH 40V 95A TO-220AB
ECAD Model:
Datasheet:
IRF40B207

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Specifications
Infineon Technologies IRF40B207 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF40B207.
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®, StrongIRFET™
  • Published
    2013
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Resistance
    4.5mOhm
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Power Dissipation-Max
    83W Tc
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    4.5m Ω @ 57A, 10V
  • Vgs(th) (Max) @ Id
    3.9V @ 50μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2110pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    95A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    68nC @ 10V
  • Drain to Source Voltage (Vdss)
    40V
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    95A
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRF40B207 Description
IRF40B207 is a 40V Single N-Channel StrongIRFET? Power MOSFET in a Lead-Free TO-220AB package. The IRF40B207 is ideal for low-frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. End-applications include cordless power and gardening tools, light electric vehicles, and e-bikes demanding a high level of ruggedness and energy efficiency.

IRF40B207 Features
High-current rating
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100 kHz
Softer body-diode compared to previous silicon generation
Industry-standard through-hole power package
Optimized for broadest availability from distribution partners

IRF40B207 Applications
Brushed Motor drive applications
BLDC Motor drive applications
Battery-powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
IRF40B207 More Descriptions
40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHSInfineon SCT
Single N-Channel 40 V 4.5 mOhm 45 nC HEXFET® Power Mosfet - TO-220-3
MOSFET, 40V, 95A, 4.5 mOhm, 45 nC Qg, TO-220AB, TUBE
Trans MOSFET N-CH Si 40V 95A 3-Pin(3 Tab) TO-220AB Tube
MOSFET, N-CH, 40V, 95A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 95A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0036ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow
Benefits: Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free, RoHS Compliant, Halogen-Free
Product Comparison
The three parts on the right have similar specifications to IRF40B207.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Resistance
    Technology
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    Number of Terminations
    Additional Feature
    Terminal Position
    JESD-30 Code
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Number of Pins
    Subcategory
    Voltage - Rated DC
    Current Rating
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Recovery Time
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    JESD-609 Code
    Terminal Finish
    Terminal Form
    Qualification Status
    View Compare
  • IRF40B207
    IRF40B207
    Infineon Technologies
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3
    -55°C~175°C TJ
    Tube
    HEXFET®, StrongIRFET™
    2013
    Active
    1 (Unlimited)
    EAR99
    4.5mOhm
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    83W Tc
    N-Channel
    4.5m Ω @ 57A, 10V
    3.9V @ 50μA
    2110pF @ 25V
    95A Tc
    68nC @ 10V
    40V
    6V 10V
    ±20V
    95A
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF4104
    IRF4104
    Infineon Technologies
    -
    -
    Through Hole
    TO-220-3
    -55°C~175°C TJ
    Tube
    HEXFET®
    2003
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    140W Tc
    N-Channel
    5.5m Ω @ 75A, 10V
    4V @ 250μA
    3000pF @ 25V
    75A Tc
    100nC @ 10V
    40V
    10V
    ±20V
    -
    Non-RoHS Compliant
    -
    NO
    SILICON
    3
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
    SINGLE
    R-PSFM-T3
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    TO-220AB
    75A
    0.0055Ohm
    470A
    40V
    220 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRF40B207 vs IRF4104
  • IRF4104PBF
    IRF4104PBF
    Infineon Technologies
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3
    -55°C~175°C TJ
    Tube
    HEXFET®
    2003
    Active
    1 (Unlimited)
    EAR99
    5.5MOhm
    MOSFET (Metal Oxide)
    -
    -
    140W Tc
    N-Channel
    5.5m Ω @ 75A, 10V
    4V @ 250μA
    3000pF @ 25V
    75A Tc
    100nC @ 10V
    -
    10V
    ±20V
    75A
    ROHS3 Compliant
    Lead Free
    -
    SILICON
    3
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
    -
    -
    1
    -
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    TO-220AB
    -
    -
    470A
    -
    220 mJ
    3
    FET General Purpose Power
    40V
    75A
    Single
    140W
    16 ns
    130ns
    77 ns
    38 ns
    4V
    20V
    40V
    35 ns
    9.017mm
    10.668mm
    4.826mm
    No SVHC
    No
    -
    -
    -
    -
    IRF40B207 vs IRF4104PBF
  • IRF4905SPBF
    IRF4905SPBF
    Infineon Technologies
    17 Weeks
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -55°C~150°C TJ
    Tube
    HEXFET®
    1997
    Discontinued
    1 (Unlimited)
    EAR99
    -
    MOSFET (Metal Oxide)
    260
    30
    170W Tc
    P-Channel
    20m Ω @ 42A, 10V
    4V @ 250μA
    3500pF @ 25V
    42A Tc
    180nC @ 10V
    55V
    10V
    ±20V
    -
    ROHS3 Compliant
    -
    YES
    SILICON
    2
    HIGH RELIABILITY, AVALANCHE RATED
    SINGLE
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    TO-252
    42A
    0.02Ohm
    280A
    55V
    140 mJ
    -
    Other Transistors
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    e3
    Matte Tin (Sn) - with Nickel (Ni) barrier
    GULL WING
    Not Qualified
    IRF40B207 vs IRF4905SPBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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