Infineon Technologies IPD06N03LA G
- Part Number:
- IPD06N03LA G
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2492172-IPD06N03LA G
- Description:
- MOSFET N-CH 25V 50A DPAK
- Datasheet:
- IPD06N03LA
Infineon Technologies IPD06N03LA G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD06N03LA G.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesOptiMOS™
- Published2003
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- Additional FeatureLOGIC LEVEL COMPATIBLE
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count4
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max83W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5.7m Ω @ 30A, 10V
- Vgs(th) (Max) @ Id2V @ 40μA
- Input Capacitance (Ciss) (Max) @ Vds2653pF @ 15V
- Current - Continuous Drain (Id) @ 25°C50A Tc
- Gate Charge (Qg) (Max) @ Vgs22nC @ 5V
- Drain to Source Voltage (Vdss)25V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- JEDEC-95 CodeTO-252AA
- Drain Current-Max (Abs) (ID)50A
- Drain-source On Resistance-Max0.0094Ohm
- Pulsed Drain Current-Max (IDM)350A
- DS Breakdown Voltage-Min25V
- Avalanche Energy Rating (Eas)225 mJ
- RoHS StatusRoHS Compliant
IPD06N03LA G Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 225 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2653pF @ 15V maximal input capacitance.A device can conduct a maximum continuous current of [50A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 350A.The DS breakdown voltage should be maintained above 25V to maintain normal operation.To operate this transistor, you will need a 25V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
IPD06N03LA G Features
the avalanche energy rating (Eas) is 225 mJ
based on its rated peak drain current 350A.
a 25V drain to source voltage (Vdss)
IPD06N03LA G Applications
There are a lot of Infineon Technologies
IPD06N03LA G applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 225 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2653pF @ 15V maximal input capacitance.A device can conduct a maximum continuous current of [50A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 350A.The DS breakdown voltage should be maintained above 25V to maintain normal operation.To operate this transistor, you will need a 25V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
IPD06N03LA G Features
the avalanche energy rating (Eas) is 225 mJ
based on its rated peak drain current 350A.
a 25V drain to source voltage (Vdss)
IPD06N03LA G Applications
There are a lot of Infineon Technologies
IPD06N03LA G applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
The three parts on the right have similar specifications to IPD06N03LA G.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusSupplier Device PackagePbfree CodeView Compare
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IPD06N03LA GSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2003e3Obsolete1 (Unlimited)2EAR99MATTE TINLOGIC LEVEL COMPATIBLEFET General Purpose PowerMOSFET (Metal Oxide)SINGLEGULL WING260compliantNOT SPECIFIED4R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE83W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING5.7m Ω @ 30A, 10V2V @ 40μA2653pF @ 15V50A Tc22nC @ 5V25V4.5V 10V±20VTO-252AA50A0.0094Ohm350A25V225 mJRoHS Compliant---
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Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2008e3Obsolete3 (168 Hours)2EAR99MATTE TINLOGIC LEVEL COMPATIBLEFET General Purpose PowerMOSFET (Metal Oxide)SINGLEGULL WING260compliantNOT SPECIFIED4R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE94W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING5.1m Ω @ 30A, 10V2V @ 50μA3110pF @ 15V50A Tc25nC @ 5V25V4.5V 10V±20VTO-252AA50A0.0084Ohm350A25V300 mJRoHS Compliant--
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~175°C TJTape & Reel (TR)OptiMOS™2008-Discontinued1 (Unlimited)-----MOSFET (Metal Oxide)-------------N-Channel-3.1mOhm @ 30A, 10V2.2V @ 250μA5300pF @ 15V90A Tc51nC @ 10V30V4.5V 10V±20V------ROHS3 CompliantPG-TO252-3-
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Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2008e3Obsolete1 (Unlimited)2EAR99Tin (Sn)--MOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIED4R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE100W TcENHANCEMENT MODEDRAINP-ChannelSWITCHING6.8m Ω @ 70A, 10V2V @ 150μA7720pF @ 15V70A Tc91nC @ 10V30V4.5V 10V±20V-70A0.0068Ohm280A30V149 mJRoHS Compliant-no
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