Infineon Technologies IPD068N10N3GBTMA1

IPD068N10N3GBTMA1 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 130 mJ.A device's maximal input capacitance is 4910pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 90A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 360A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (6V 10V).

IPD068N10N3GBTMA1 Features
the avalanche energy rating (Eas) is 130 mJ
based on its rated peak drain current 360A.
a 100V drain to source voltage (Vdss)


IPD068N10N3GBTMA1 Applications
There are a lot of Infineon Technologies
IPD068N10N3GBTMA1 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples