Infineon Technologies IPD050N03LGATMA1

IPD050N03LGATMA1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 60 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3200pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 50A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 25 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.7 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 30V, it supports dual voltages up to the maximum.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

IPD050N03LGATMA1 Features
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 25 ns


IPD050N03LGATMA1 Applications
There are a lot of Infineon Technologies
IPD050N03LGATMA1 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies