Infineon Technologies IPA037N08N3 G

Name: IPA037N08N3 G
Brand: Infineon Technologies
SKU: 2481006-IPA037N08N3 G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPA037N08N3 G

Manufacturer:: Infineon Technologies

Ventron No:: 2481006-IPA037N08N3 G

Description:: MOSFET N-CH 80V 75A TO220-3

ECAD Model:

Datasheet:: IPA037N08N3 G

Specifications

Infineon Technologies IPA037N08N3 G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPA037N08N3 G.

Package / Case
PG-TO220-3
Packaging
Tube-packed
RoHS Status
RoHS Compliant

Description

IPA037N08N3 G Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPA037N08N3 G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPA037N08N3 G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

Product Comparison

The three parts on the right have similar specifications to IPA037N08N3 G.

Image

Part Number

Manufacturer

Package / Case

Packaging

RoHS Status

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Drain to Source Voltage (Vdss)

Continuous Drain Current (Id) @ 25°C

Power Dissipation-Max (Ta=25°C)

Factory Lead Time

Mount

Mounting Type

Number of Pins

Transistor Element Material

Operating Temperature

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

Turn On Delay Time

Transistor Application

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain-source On Resistance-Max

Avalanche Energy Rating (Eas)

Lead Free

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Input Capacitance

Drain to Source Resistance

Rds On Max

View Compare
IPA037N08N3 G

Infineon Technologies

PG-TO220-3

Tube-packed

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPA086N10N3 G

Infineon Technologies

PG-TO220-3

Tube-packed

RoHS Compliant

N Channel

8.6mΩ @ 45A,10V

3.5V @ 75uA

100V

45A Tc

37.5W Tc

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IPA037N08N3 G vs IPA086N10N3 G
IPA029N06NXKSA1

Infineon Technologies

TO-220-3 Full Pack

Tube

ROHS3 Compliant

N-Channel

2.9m Ω @ 84A, 10V

3.3V @ 75μA

-

-

-

13 Weeks

Through Hole

Through Hole

3

SILICON

-55°C~175°C TJ

OptiMOS™

2012

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

1

SINGLE WITH BUILT-IN DIODE

38W Tc

ENHANCEMENT MODE

ISOLATED

16 ns

SWITCHING

Halogen Free

5125pF @ 30V

84A Tc

66nC @ 10V

15ns

6V 10V

±20V

11 ns

30 ns

84A

TO-220AB

20V

60V

0.0029Ohm

140 mJ

Lead Free

-

-

-

-

-

-

IPA037N08N3 G vs IPA029N06NXKSA1
IPA041N04NGXKSA1

Infineon Technologies

TO-220-3 Full Pack

Tube

ROHS3 Compliant

N-Channel

4.1mOhm @ 70A, 10V

4V @ 45μA

40V

-

-

13 Weeks

Through Hole

Through Hole

3

-

-55°C~175°C TJ

OptiMOS™

2013

-

-

Active

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

35W Tc

-

-

16 ns

-

Halogen Free

4500pF @ 20V

70A Tc

56nC @ 10V

3.8ns

10V

±20V

4.8 ns

23 ns

70A

-

20V

40V

-

-

Lead Free

PG-TO220-FP

175°C

-55°C

4.5nF

3.5mOhm

4.1 mΩ

IPA037N08N3 G vs IPA041N04NGXKSA1