Infineon Technologies IPA030N10N3 G

Name: IPA030N10N3 G
Brand: Infineon Technologies
SKU: 2851620-IPA030N10N3 G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPA030N10N3 G

Manufacturer:: Infineon Technologies

Ventron No:: 2851620-IPA030N10N3 G

Description:: MOSFET N-CH 100V 79A TO220-FP

ECAD Model:

Datasheet:: IPA030N10N3 G

Specifications

Infineon Technologies IPA030N10N3 G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPA030N10N3 G.

Package / Case
PG-TO220-3
Packaging
Tube-packed
FET Type
N Channel
Rds On (Max) @ Id, Vgs
3mΩ @ 79A,10V
Vgs(th) (Max) @ Id
3.5V @ 270uA
Drain to Source Voltage (Vdss)
100V
Continuous Drain Current (Id) @ 25°C
79A Tc
Power Dissipation-Max (Ta=25°C)
41W Tc
RoHS Status
RoHS Compliant

Description

IPA030N10N3 G Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPA030N10N3 G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPA030N10N3 G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

Product Comparison

The three parts on the right have similar specifications to IPA030N10N3 G.

Image

Part Number

Manufacturer

Package / Case

Packaging

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Drain to Source Voltage (Vdss)

Continuous Drain Current (Id) @ 25°C

Power Dissipation-Max (Ta=25°C)

RoHS Status

Factory Lead Time

Mount

Mounting Type

Number of Pins

Transistor Element Material

Operating Temperature

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

Turn On Delay Time

Transistor Application

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Lead Free

Pin Count

Qualification Status

Power Dissipation

View Compare
IPA030N10N3 G

Infineon Technologies

PG-TO220-3

Tube-packed

N Channel

3mΩ @ 79A,10V

3.5V @ 270uA

100V

79A Tc

41W Tc

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPA040N06NXKSA1

Infineon Technologies

TO-220-3 Full Pack

Tube

N-Channel

4m Ω @ 69A, 10V

3.3V @ 50μA

-

-

-

ROHS3 Compliant

13 Weeks

Through Hole

Through Hole

3

SILICON

-55°C~175°C TJ

OptiMOS™

2012

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

1

SINGLE WITH BUILT-IN DIODE

36W Tc

ENHANCEMENT MODE

ISOLATED

14 ns

SWITCHING

Halogen Free

3375pF @ 30V

69A Tc

44nC @ 10V

16ns

6V 10V

±20V

8 ns

33 ns

69A

TO-220AB

20V

60V

0.004Ohm

276A

77 mJ

Lead Free

-

-

-

IPA030N10N3 G vs IPA040N06NXKSA1
IPA029N06NXKSA1

Infineon Technologies

TO-220-3 Full Pack

Tube

N-Channel

2.9m Ω @ 84A, 10V

3.3V @ 75μA

-

-

-

ROHS3 Compliant

13 Weeks

Through Hole

Through Hole

3

SILICON

-55°C~175°C TJ

OptiMOS™

2012

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

1

SINGLE WITH BUILT-IN DIODE

38W Tc

ENHANCEMENT MODE

ISOLATED

16 ns

SWITCHING

Halogen Free

5125pF @ 30V

84A Tc

66nC @ 10V

15ns

6V 10V

±20V

11 ns

30 ns

84A

TO-220AB

20V

60V

0.0029Ohm

-

140 mJ

Lead Free

-

-

-

IPA030N10N3 G vs IPA029N06NXKSA1
IPA032N06N3GXKSA1

Infineon Technologies

TO-220-3 Full Pack

Tube

N-Channel

3.2m Ω @ 80A, 10V

4V @ 118μA

-

-

-

ROHS3 Compliant

13 Weeks

Through Hole

Through Hole

3

SILICON

-55°C~175°C TJ

OptiMOS™

2008

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

1

SINGLE WITH BUILT-IN DIODE

41W Tc

ENHANCEMENT MODE

-

35 ns

SWITCHING

Halogen Free

13000pF @ 30V

84A Tc

165nC @ 10V

120ns

10V

±20V

20 ns

62 ns

84A

TO-220AB

20V

60V

-

-

-

Lead Free

3

Not Qualified

41W

IPA030N10N3 G vs IPA032N06N3GXKSA1