Fairchild/ON Semiconductor HUFA76629D3S

Name: HUFA76629D3S
Brand: Fairchild/ON Semiconductor
SKU: 3586656-HUFA76629D3S
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: HUFA76629D3S

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3586656-HUFA76629D3S

Description:: MOSFET N-CH 100V 20A DPAK

ECAD Model:

Datasheet:: HUFA76629D3/D3S

Specifications

Fairchild/ON Semiconductor HUFA76629D3S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor HUFA76629D3S.

Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
UltraFET™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
MATTE TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSSO-G2
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
110W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
52m Ω @ 20A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1.285pF @ 25V
Current - Continuous Drain (Id) @ 25°C
20A Tc
Gate Charge (Qg) (Max) @ Vgs
46nC @ 10V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±16V
JEDEC-95 Code
TO-252AA
Drain Current-Max (Abs) (ID)
20A
Drain-source On Resistance-Max
0.055Ohm
DS Breakdown Voltage-Min
100V
RoHS Status
ROHS3 Compliant

Description

HUFA76629D3S Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.285pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [20A] according to its drain current.The DS breakdown voltage should be maintained above 100V to maintain normal operation.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

HUFA76629D3S Features
a 100V drain to source voltage (Vdss)

HUFA76629D3S Applications
There are a lot of Rochester Electronics, LLC
HUFA76629D3S applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

HUFA76629D3S More Descriptions

MOSFET 20a 100V 0.054 Ohm Logic Level N-Ch
PWR MOS ULTRAFET 100V/20A/0.055 OHMS N-CH LL TO-252AA - Bulk
MOSFET N-CH 100V 20A TO252AA
N-CHANNEL POWER MOSFET
OEMs, CMs ONLY (NO BROKERS)
MISCELLANEOUS MOSFETS;
Contact for details

Product Comparison

The three parts on the right have similar specifications to HUFA76629D3S.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

RoHS Status

Supplier Device Package

Published

View Compare
HUFA76629D3S

Fairchild/ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tube

UltraFET™

e3

yes

Obsolete

1 (Unlimited)

2

MATTE TIN

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

unknown

NOT SPECIFIED

R-PSSO-G2

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

110W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

52m Ω @ 20A, 10V

3V @ 250μA

1.285pF @ 25V

20A Tc

46nC @ 10V

100V

4.5V 10V

±16V

TO-252AA

20A

0.055Ohm

100V

ROHS3 Compliant

-

-

-
HUFA75339S3ST

Fairchild/ON Semiconductor

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tape & Reel (TR)

UltraFET™

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

200W Tc

-

-

N-Channel

-

12mOhm @ 75A, 10V

4V @ 250μA

2000pF @ 25V

75A Tc

130nC @ 20V

55V

10V

±20V

-

-

-

-

-

D2PAK (TO-263AB)

2002

HUFA76629D3S vs HUFA75339S3ST
HUFA75337S3S

Fairchild/ON Semiconductor

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tube

UltraFET™

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

175W Tc

-

-

N-Channel

-

14mOhm @ 75A, 10V

4V @ 250μA

1775pF @ 25V

75A Tc

109nC @ 20V

55V

10V

±20V

-

-

-

-

-

D2PAK (TO-263AB)

2002

HUFA76629D3S vs HUFA75337S3S
HUFA75345G3

Fairchild/ON Semiconductor

Through Hole

TO-247-3

-

-

-55°C~175°C TJ

Tube

UltraFET™

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

325W Tc

-

-

N-Channel

-

7mOhm @ 75A, 10V

4V @ 250μA

4000pF @ 25V

75A Tc

275nC @ 20V

55V

10V

±20V

-

-

-

-

-

TO-247-3

2003

HUFA76629D3S vs HUFA75345G3