Fairchild/ON Semiconductor HUF75842P3

Name: HUF75842P3
Brand: Fairchild/ON Semiconductor
SKU: 2483961-HUF75842P3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: HUF75842P3

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2483961-HUF75842P3

Description:: MOSFET N-CH 150V 43A TO-220AB

ECAD Model:

Datasheet:: TO220B03 Pkg Drawing

Specifications

Fairchild/ON Semiconductor HUF75842P3 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor HUF75842P3.

Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
UltraFET™
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
150V
Technology
MOSFET (Metal Oxide)
Current Rating
43A
Number of Elements
1
Voltage
150V
Power Dissipation-Max
230W Tc
Element Configuration
Single
Current
43A
Operating Mode
ENHANCEMENT MODE
Power Dissipation
230W
Case Connection
DRAIN
Turn On Delay Time
13 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
42m Ω @ 43A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2730pF @ 25V
Current - Continuous Drain (Id) @ 25°C
43A Tc
Gate Charge (Qg) (Max) @ Vgs
175nC @ 20V
Rise Time
53ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
34 ns
Turn-Off Delay Time
47 ns
Continuous Drain Current (ID)
43A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.042Ohm
Drain to Source Breakdown Voltage
150V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

HUF75842P3 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2730pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 43A.With a drain-source breakdown voltage of 150V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 150V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 47 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 13 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.

HUF75842P3 Features
a continuous drain current (ID) of 43A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 47 ns

HUF75842P3 Applications
There are a lot of ON Semiconductor
HUF75842P3 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

HUF75842P3 More Descriptions

N-Channel UltraFET Power MOSFET 150V, 43A, 42mΩ
Trans MOSFET N-CH 150V 43A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
Power Field-Effect Transistor, 43A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Ch Mosfet, 150V, 43A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:43A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Onsemi HUF75842P3

Product Comparison

The three parts on the right have similar specifications to HUF75842P3.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Voltage

Power Dissipation-Max

Element Configuration

Current

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

Surface Mount

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

View Compare
HUF75842P3

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

12 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

UltraFET™

2002

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

FET General Purpose Power

150V

MOSFET (Metal Oxide)

43A

1

150V

230W Tc

Single

43A

ENHANCEMENT MODE

230W

DRAIN

13 ns

N-Channel

SWITCHING

42m Ω @ 43A, 10V

4V @ 250μA

2730pF @ 25V

43A Tc

175nC @ 20V

53ns

10V

±20V

34 ns

47 ns

43A

TO-220AB

20V

0.042Ohm

150V

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-
HUF75337P3

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-220-3

-

-

-55°C~175°C TJ

Tube

UltraFET™

2002

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

175W Tc

-

-

-

-

-

-

N-Channel

-

14mOhm @ 75A, 10V

4V @ 250μA

1775pF @ 25V

75A Tc

109nC @ 20V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

TO-220-3

55V

-

-

-

-

-

-

-

-

-

-

-

HUF75842P3 vs HUF75337P3
HUF75637S3ST

Fairchild/ON Semiconductor

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

UltraFET™

-

e3

yes

Obsolete

1 (Unlimited)

2

-

MATTE TIN

-

-

MOSFET (Metal Oxide)

-

1

-

155W Tc

-

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

30m Ω @ 44A, 10V

4V @ 250μA

1.7pF @ 25V

44A Tc

108nC @ 20V

-

10V

±20V

-

-

-

-

-

0.03Ohm

-

-

ROHS3 Compliant

-

-

100V

YES

SINGLE

GULL WING

260

unknown

NOT SPECIFIED

R-PSSO-G2

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

44A

100V

HUF75842P3 vs HUF75637S3ST
HUF75617D3S

Fairchild/ON Semiconductor

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~175°C TJ

Tube

UltraFET™

2002

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

64W Tc

-

-

-

-

-

-

N-Channel

-

90mOhm @ 16A, 10V

4V @ 250μA

570pF @ 25V

16A Tc

39nC @ 20V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

TO-252AA

100V

-

-

-

-

-

-

-

-

-

-

-

HUF75842P3 vs HUF75617D3S