Fairchild/ON Semiconductor HUF75639S3ST
- Part Number:
- HUF75639S3ST
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3813701-HUF75639S3ST
- Description:
- MOSFET N-CH 100V 56A D2PAK
- ECAD Model:
-
- Datasheet:
- HUF75639S3ST
Fairchild/ON Semiconductor HUF75639S3ST technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor HUF75639S3ST.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Weight1.31247g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesUltraFET™
- Published2002
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Resistance25mOhm
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Current Rating56A
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max200W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation200W
- Case ConnectionDRAIN
- Turn On Delay Time15 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs25m Ω @ 56A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2000pF @ 25V
- Current - Continuous Drain (Id) @ 25°C56A Tc
- Gate Charge (Qg) (Max) @ Vgs130nC @ 20V
- Rise Time60ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)25 ns
- Turn-Off Delay Time20 ns
- Continuous Drain Current (ID)56A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
HUF75639S3ST Description
HUF75639S3ST is a 100V N-Channel UltraFET Power MOSFET. The N-Channel power MOSFET HUF75639S3ST is manufactured using the innovative UltraFET? process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. The HUF75639S3ST is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
HUF75639S3ST Features
56A, 100V
Temperature Compensated PSPICE? and SABER? Electrical Models
SPICE and SABER Thermal Impedance Models
Peak Current vs Pulse Width Curve
UIS Rating Curve
HUF75639S3ST Applications
AC-DC Merchant Power Supply
Consumer Appliances
DC-DC Merchant Power Supply
Desktop PC
Distribution
HUF75639S3ST is a 100V N-Channel UltraFET Power MOSFET. The N-Channel power MOSFET HUF75639S3ST is manufactured using the innovative UltraFET? process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. The HUF75639S3ST is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
HUF75639S3ST Features
56A, 100V
Temperature Compensated PSPICE? and SABER? Electrical Models
SPICE and SABER Thermal Impedance Models
Peak Current vs Pulse Width Curve
UIS Rating Curve
HUF75639S3ST Applications
AC-DC Merchant Power Supply
Consumer Appliances
DC-DC Merchant Power Supply
Desktop PC
Distribution
HUF75639S3ST More Descriptions
Trans MOSFET N-CH Si 100V 56A 3-Pin(2 Tab) D2PAK T/R / MOSFET N-CH 100V 56A D2PAK
N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ
Transistor,mosfet,n-Channel,100V V(Br)Dss,56A I(D),to-263Ab Rohs Compliant: Yes |Onsemi HUF75639S3ST
N-Channel 100 V 0.025 Ohm UltraFET Power Mosfet - TO-263AB
Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ
Transistor,mosfet,n-Channel,100V V(Br)Dss,56A I(D),to-263Ab Rohs Compliant: Yes |Onsemi HUF75639S3ST
N-Channel 100 V 0.025 Ohm UltraFET Power Mosfet - TO-263AB
Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
The three parts on the right have similar specifications to HUF75639S3ST.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal FormCurrent RatingJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageRadiation HardeningRoHS StatusLead FreeSupplier Device PackageDrain to Source Voltage (Vdss)Surface MountTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Qualification StatusConfigurationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinView Compare
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HUF75639S3STACTIVE (Last Updated: 3 days ago)8 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB31.31247gSILICON-55°C~175°C TJTape & Reel (TR)UltraFET™2002e3yesActive1 (Unlimited)2EAR9925mOhmTin (Sn)FET General Purpose Power100VMOSFET (Metal Oxide)GULL WING56AR-PSSO-G21200W TcSingleENHANCEMENT MODE200WDRAIN15 nsN-ChannelSWITCHING25m Ω @ 56A, 10V4V @ 250μA2000pF @ 25V56A Tc130nC @ 20V60ns10V±20V25 ns20 ns56A20V100VNoROHS3 CompliantLead Free------------- -
---Through HoleTO-220-3----55°C~175°C TJTubeUltraFET™2002--Obsolete1 (Unlimited)------MOSFET (Metal Oxide)----175W Tc-----N-Channel-14mOhm @ 75A, 10V4V @ 250μA1775pF @ 25V75A Tc109nC @ 20V-10V±20V--------TO-220-355V----------
-
---Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--SILICON-55°C~175°C TJTape & Reel (TR)UltraFET™-e3yesObsolete1 (Unlimited)2--MATTE TIN--MOSFET (Metal Oxide)GULL WING-R-PSSO-G21155W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING30m Ω @ 44A, 10V4V @ 250μA1.7pF @ 25V44A Tc108nC @ 20V-10V±20V------ROHS3 Compliant--100VYESSINGLE260unknownNOT SPECIFIEDCOMMERCIALSINGLE WITH BUILT-IN DIODE44A0.03Ohm100V
-
---Through HoleTO-251-3 Short Leads, IPak, TO-251AA--SILICON-55°C~175°C TJTubeUltraFET™--yesObsolete1 (Unlimited)3--NOT SPECIFIED--MOSFET (Metal Oxide)--R-PSIP-T3138W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING92m Ω @ 13A, 10V3V @ 250μA350pF @ 25V12A Tc11.3nC @ 10V-4.5V 10V±16V------ROHS3 Compliant--60VNOSINGLENOT SPECIFIEDunknownNOT SPECIFIEDCOMMERCIALSINGLE WITH BUILT-IN DIODE12A0.117Ohm60V
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