Fairchild/ON Semiconductor HUF75345P3

Name: HUF75345P3
Brand: Fairchild/ON Semiconductor
SKU: 3070447-HUF75345P3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: HUF75345P3

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3070447-HUF75345P3

Description:: MOSFET N-CH 55V 75A TO-220AB

ECAD Model:

Datasheet:: TO220B03 Pkg Drawing

Specifications

Fairchild/ON Semiconductor HUF75345P3 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor HUF75345P3.

Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
UltraFET™
JESD-609 Code
e0
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
325W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
7m Ω @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4pF @ 25V
Current - Continuous Drain (Id) @ 25°C
75A Tc
Gate Charge (Qg) (Max) @ Vgs
275nC @ 20V
Drain to Source Voltage (Vdss)
55V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
JEDEC-95 Code
TO-220AB
Drain Current-Max (Abs) (ID)
75A
Drain-source On Resistance-Max
0.007Ohm
DS Breakdown Voltage-Min
55V
RoHS Status
Non-RoHS Compliant

Description

HUF75345P3 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4pF @ 25V.75A is the drain current of this device, which is the maximum continuous current transistor can carry.To maintain normal operation, the DS breakdown voltage should be kept above 55V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 55V.Using drive voltage (10V) reduces this device's overall power consumption.

HUF75345P3 Features
a 55V drain to source voltage (Vdss)

HUF75345P3 Applications
There are a lot of Rochester Electronics, LLC
HUF75345P3 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

HUF75345P3 More Descriptions

N-Channel 55 V 0.007 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB
N-Channel UltraFET Power MOSFET 55V, 75A, 7mΩ
Trans MOSFET N-CH 55V 75A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
Power Field-Effect Transistor, 75A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:55V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:215W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:7mohm; Package / Case:TO-220AB; Power Dissipation Pd:215W; Power Dissipation Pd:215W; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

Product Comparison

The three parts on the right have similar specifications to HUF75345P3.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

RoHS Status

Supplier Device Package

Published

Terminal Form

Reach Compliance Code

View Compare
HUF75345P3

Fairchild/ON Semiconductor

Through Hole

TO-220-3

NO

SILICON

-55°C~175°C TJ

Tube

UltraFET™

e0

yes

Obsolete

1 (Unlimited)

3

TIN LEAD

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

3

R-PSFM-T3

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

325W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

7m Ω @ 75A, 10V

4V @ 250μA

4pF @ 25V

75A Tc

275nC @ 20V

55V

10V

±20V

TO-220AB

75A

0.007Ohm

55V

Non-RoHS Compliant

-

-

-

-

-
HUF75842S3S

Fairchild/ON Semiconductor

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tube

UltraFET™

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

230W Tc

-

-

N-Channel

-

42mOhm @ 43A, 10V

4V @ 250μA

2730pF @ 25V

43A Tc

175nC @ 20V

150V

10V

±20V

-

-

-

-

-

D2PAK (TO-263AB)

2002

-

-

HUF75345P3 vs HUF75842S3S
HUF75637S3ST

Fairchild/ON Semiconductor

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

UltraFET™

e3

yes

Obsolete

1 (Unlimited)

2

MATTE TIN

MOSFET (Metal Oxide)

SINGLE

260

NOT SPECIFIED

-

R-PSSO-G2

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

155W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

30m Ω @ 44A, 10V

4V @ 250μA

1.7pF @ 25V

44A Tc

108nC @ 20V

100V

10V

±20V

-

44A

0.03Ohm

100V

ROHS3 Compliant

-

-

GULL WING

unknown

HUF75345P3 vs HUF75637S3ST
HUF75617D3S

Fairchild/ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~175°C TJ

Tube

UltraFET™

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

64W Tc

-

-

N-Channel

-

90mOhm @ 16A, 10V

4V @ 250μA

570pF @ 25V

16A Tc

39nC @ 20V

100V

10V

±20V

-

-

-

-

-

TO-252AA

2002

-

-

HUF75345P3 vs HUF75617D3S