Fairchild/ON Semiconductor HUF75332P3

Name: HUF75332P3
Brand: Fairchild/ON Semiconductor
SKU: 2483321-HUF75332P3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: HUF75332P3

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2483321-HUF75332P3

Description:: MOSFET N-CH 55V 60A TO-220AB

ECAD Model:

Datasheet:: TO220B03 Pkg Drawing

Specifications

Fairchild/ON Semiconductor HUF75332P3 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor HUF75332P3.

Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Series
UltraFET™
JESD-609 Code
e0
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
145W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
19m Ω @ 60A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1.3pF @ 25V
Current - Continuous Drain (Id) @ 25°C
60A Tc
Gate Charge (Qg) (Max) @ Vgs
85nC @ 20V
Drain to Source Voltage (Vdss)
55V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
JEDEC-95 Code
TO-220AB
Drain Current-Max (Abs) (ID)
60A
Drain-source On Resistance-Max
0.019Ohm
DS Breakdown Voltage-Min
55V
RoHS Status
Non-RoHS Compliant

Description

HUF75332P3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.3pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [60A] according to its drain current.The DS breakdown voltage should be maintained above 55V to maintain normal operation.To operate this transistor, you will need a 55V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

HUF75332P3 Features
a 55V drain to source voltage (Vdss)

HUF75332P3 Applications
There are a lot of Rochester Electronics, LLC
HUF75332P3 applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

HUF75332P3 More Descriptions

N-Channel UltraFET Power MOSFET 55V, 60A, 19mΩ
Trans MOSFET N-CH 55V 60A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
Power Field-Effect Transistor, 60A I(D), 55V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:60A; On Resistance, Rds(on):0.016ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 ;RoHS Compliant: Yes
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75332.

Product Comparison

The three parts on the right have similar specifications to HUF75332P3.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

RoHS Status

Packaging

Supplier Device Package

Published

View Compare
HUF75332P3

Fairchild/ON Semiconductor

Through Hole

TO-220-3

NO

SILICON

-55°C~175°C TJ

UltraFET™

e0

yes

Obsolete

1 (Unlimited)

3

TIN LEAD

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

unknown

NOT SPECIFIED

R-PSFM-T3

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

145W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

19m Ω @ 60A, 10V

4V @ 250μA

1.3pF @ 25V

60A Tc

85nC @ 20V

55V

10V

±20V

TO-220AB

60A

0.019Ohm

55V

Non-RoHS Compliant

-

-

-

-
HUF75631P3

Fairchild/ON Semiconductor

Through Hole

TO-220-3

NO

SILICON

-55°C~175°C TJ

UltraFET™

e3

yes

Obsolete

1 (Unlimited)

3

MATTE TIN

MOSFET (Metal Oxide)

SINGLE

NOT APPLICABLE

unknown

NOT APPLICABLE

R-PSFM-T3

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

120W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

40m Ω @ 33A, 10V

4V @ 250μA

1.22pF @ 25V

33A Tc

79nC @ 20V

100V

10V

±20V

TO-220AB

33A

0.04Ohm

100V

ROHS3 Compliant

Tube

-

-

HUF75332P3 vs HUF75631P3
HUF75337P3

Fairchild/ON Semiconductor

Through Hole

TO-220-3

-

-

-55°C~175°C TJ

UltraFET™

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

175W Tc

-

-

N-Channel

-

14mOhm @ 75A, 10V

4V @ 250μA

1775pF @ 25V

75A Tc

109nC @ 20V

55V

10V

±20V

-

-

-

-

-

Tube

TO-220-3

2002

HUF75332P3 vs HUF75337P3
HUF75309D3S

Fairchild/ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~175°C TJ

UltraFET™

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

55W Tc

-

-

N-Channel

-

70mOhm @ 19A, 10V

4V @ 250μA

350pF @ 25V

19A Tc

24nC @ 20V

55V

10V

±20V

-

-

-

-

-

Tube

D-Pak

2002

HUF75332P3 vs HUF75309D3S