Diodes Incorporated FZT869TA

FZT869TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 1A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 350mV @ 150mA, 6.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 6.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 7A volts.

FZT869TA Features
the DC current gain for this device is 300 @ 1A 1V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 350mV @ 150mA, 6.5A
the emitter base voltage is kept at 6V
the current rating of this device is 6.5A
a transition frequency of 100MHz


FZT869TA Applications
There are a lot of Diodes Incorporated
FZT869TA applications of single BJT transistors.


Inverter
Interface
Driver
Muting