Diodes Incorporated FZT651TC

FZT651TC Overview
In this device, the DC current gain is 100 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 430mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 300mA, 3A.Maintaining the continuous collector voltage at 3A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).175MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.

FZT651TC Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of 430mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 175MHz


FZT651TC Applications
There are a lot of Diodes Incorporated
FZT651TC applications of single BJT transistors.


Inverter
Interface
Driver
Muting