Diodes Incorporated FZT692BTA
- Part Number:
- FZT692BTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2845072-FZT692BTA
- Description:
- TRANS NPN 70V 2A SOT-223
- Datasheet:
- FZT692BTA
Diodes Incorporated FZT692BTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FZT692BTA.
- Factory Lead Time13 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- TerminationSMD/SMT
- ECCN CodeEAR99
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Voltage - Rated DC70V
- Max Power Dissipation2W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating1A
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFZT692
- JESD-30 CodeR-PDSO-G4
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product150MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)70V
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 1A 2V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 2A
- Collector Emitter Breakdown Voltage70V
- Transition Frequency150MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage70V
- Collector Base Voltage (VCBO)70V
- Emitter Base Voltage (VEBO)5V
- hFE Min400
- Continuous Collector Current2A
- Height1.65mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FZT692BTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 1A 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 2A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1A.In the part, the transition frequency is 150MHz.This device can take an input voltage of 70V volts before it breaks down.A maximum collector current of 2A volts can be achieved.
FZT692BTA Features
the DC current gain for this device is 150 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
FZT692BTA Applications
There are a lot of Diodes Incorporated
FZT692BTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 1A 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 2A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1A.In the part, the transition frequency is 150MHz.This device can take an input voltage of 70V volts before it breaks down.A maximum collector current of 2A volts can be achieved.
FZT692BTA Features
the DC current gain for this device is 150 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
FZT692BTA Applications
There are a lot of Diodes Incorporated
FZT692BTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FZT692BTA More Descriptions
Power Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
FZT692B Series NPN 2 A 70 V SMT Silicon Medium Power Transistor - SOT-223
Trans GP BJT NPN 70V 2A 3000mW 4-Pin(3 Tab) SOT-223 T/R
Trans Darlington NPN 70V 2A SOT223 | Diodes Inc FZT692BTA
TRANSISTOR, NPN, REEL 1K; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 70V; Transition Frequency ft: -; Power Dissipation Pd: 2W; DC Collector Current: 2A; DC Current Gain hFE: 500hFE; Transistor Case Style: SO
FZT692B Series NPN 2 A 70 V SMT Silicon Medium Power Transistor - SOT-223
Trans GP BJT NPN 70V 2A 3000mW 4-Pin(3 Tab) SOT-223 T/R
Trans Darlington NPN 70V 2A SOT223 | Diodes Inc FZT692BTA
TRANSISTOR, NPN, REEL 1K; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 70V; Transition Frequency ft: -; Power Dissipation Pd: 2W; DC Collector Current: 2A; DC Current Gain hFE: 500hFE; Transistor Case Style: SO
The three parts on the right have similar specifications to FZT692BTA.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeHTS CodeReach Compliance CodePin CountQualification StatusPolarityFrequency - TransitionTerminal FinishConfigurationFrequencyView Compare
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FZT692BTA13 WeeksTinSurface MountSurface MountTO-261-4, TO-261AA37.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4SMD/SMTEAR99HIGH RELIABILITYOther Transistors70V2WDUALGULL WING2601A40FZT692R-PDSO-G41Single2WCOLLECTORSWITCHING150MHzNPNNPN70V2A150 @ 1A 2V100nA500mV @ 200mA, 2A70V150MHz500mV70V70V5V4002A1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free----------
-
--Surface Mount, Through HoleSurface MountTO-261-4, TO-261AA--SILICON-55°C~150°C TJDigi-Reel®2006--Obsolete1 (Unlimited)4-EAR99--100V2WDUALGULL WING-1.5A-FZT604R-PDSO-G41--COLLECTORSWITCHING--NPN - Darlington1.5V1.5A2000 @ 1A 5V10μA1.5V @ 1mA, 1A200V150MHz-100V120V10V-------Non-RoHS CompliantContains Lead8541.29.00.75unknown4Not QualifiedNPN150MHz---
-
--Surface MountSurface MountTO-261-4, TO-261AA-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3-Obsolete1 (Unlimited)4-EAR99--400V2WDUALGULL WING260500mA40FZT658R-PDSO-G41--COLLECTORSWITCHING50MHzNPNNPN500mV500mA40 @ 200mA 10V100nA ICBO500mV @ 10mA, 100mA400V50MHz500mV-400V5V-500mA---No SVHC-RoHS CompliantLead Free8541.29.00.75unknown-Not Qualified--MATTE TINSINGLE-
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-TinSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3noActive1 (Unlimited)4-EAR99--300V2WDUALGULL WING260500mA40FZT657-1Single2WCOLLECTORSWITCHING30MHzNPNNPN300V500mA50 @ 100mA 5V100nA ICBO500mV @ 10mA, 100mA300V30MHz500mV300V300V5V-500mA1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free--------30MHz
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