Fairchild/ON Semiconductor FZT649

Name: FZT649
Brand: Fairchild/ON Semiconductor
SKU: 3813397-FZT649
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FZT649

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3813397-FZT649

Description:: TRANS NPN 25V 3A SOT-223

ECAD Model:

Datasheet:: FZT649

Specifications

Fairchild/ON Semiconductor FZT649 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FZT649.

Lifecycle Status
ACTIVE (Last Updated: 13 hours ago)
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
188mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2017
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
25V
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
3A
Frequency
150MHz
Base Part Number
FZT649
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Gain Bandwidth Product
150MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
25V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
25V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
600mV
Max Breakdown Voltage
25V
Collector Base Voltage (VCBO)
35V
Emitter Base Voltage (VEBO)
5V
hFE Min
100
Height
1.7mm
Length
6.7mm
Width
3.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FZT649 Overview
This device has a DC current gain of 100 @ 1A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.A VCE saturation (Max) of 600mV @ 300mA, 3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 25V volts can be used.A maximum collector current of 3A volts is possible.

FZT649 Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 150MHz

FZT649 Applications
There are a lot of ON Semiconductor
FZT649 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

FZT649 More Descriptions

Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
25V 2W 3A 100@1A2V 600mV@3A300mA NPN -55¡Í~ 150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
These devices are designed with high current gain and low saturation voltage with collector currents up to 3 A continuous.
Bipolar Transistor, Npn, 25V; Transistor Polarity:Npn; Collector Emitter Voltage Max:25V; Continuous Collector Current:3A; Power Dissipation:2W; Transistor Mounting:Surface Mount; No. Of Pins:4Pins; Transition Frequency:150Mhz Rohs Compliant: Yes |Onsemi FZT649
TRANSISTOR, BIPOL, NPN, 25V, SOT-223-4; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 25V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 2W; DC Collector Current: 3A; DC Current Gain hFE: 15hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Product Comparison

The three parts on the right have similar specifications to FZT649.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Terminal Form

Current Rating

Frequency

Base Part Number

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

HTS Code

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Transistor Application

Frequency - Transition

Continuous Collector Current

Reach Compliance Code

View Compare
FZT649

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 13 hours ago)

4 Weeks

Surface Mount

Surface Mount

TO-261-4, TO-261AA

4

188mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2017

e3

yes

Active

1 (Unlimited)

4

EAR99

Tin (Sn)

Other Transistors

25V

2W

DUAL

GULL WING

3A

150MHz

FZT649

1

Single

2W

COLLECTOR

150MHz

NPN

NPN

25V

3A

100 @ 1A 2V

100nA ICBO

600mV @ 300mA, 3A

25V

150MHz

600mV

25V

35V

5V

100

1.7mm

6.7mm

3.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
FZT689BTC

Diodes Incorporated

-

-

Surface Mount

Surface Mount

TO-261-4, TO-261AA

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2012

e3

-

Obsolete

1 (Unlimited)

4

EAR99

Matte Tin (Sn)

-

20V

2W

DUAL

GULL WING

3A

-

FZT689

1

-

2W

COLLECTOR

-

NPN

NPN

450mV

3A

400 @ 2A 2V

100nA ICBO

450mV @ 20mA, 3A

20V

150MHz

-

-

20V

5V

-

-

-

-

No SVHC

-

RoHS Compliant

Lead Free

8541.29.00.75

260

40

R-PDSO-G4

Not Qualified

SINGLE

SWITCHING

150MHz

3A

-

FZT649 vs FZT689BTC
FZT696BTC

Diodes Incorporated

-

15 Weeks

Surface Mount

Surface Mount

TO-261-4, TO-261AA

4

7.994566mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2006

e3

no

Active

1 (Unlimited)

4

EAR99

Matte Tin (Sn)

-

180V

2W

DUAL

GULL WING

500mA

-

FZT696

1

-

-

COLLECTOR

-

NPN

NPN

180V

500mA

150 @ 200mA 5V

100nA ICBO

250mV @ 5mA, 200mA

180V

70MHz

200mV

-

180V

5V

-

1.65mm

6.7mm

3.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

260

40

-

-

SINGLE

SWITCHING

70MHz

500mA

-

FZT649 vs FZT696BTC
FZT694BTC

Diodes Incorporated

-

-

Surface Mount

Surface Mount

TO-261-4, TO-261AA

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2012

e3

-

Obsolete

1 (Unlimited)

4

EAR99

MATTE TIN

-

120V

2W

DUAL

GULL WING

1A

-

FZT694

1

-

2W

COLLECTOR

-

NPN

NPN

500mV

1A

150 @ 400mA 2V

100nA ICBO

500mV @ 5mA, 400mA

120V

130MHz

-

-

120V

5V

500

-

-

-

No SVHC

-

RoHS Compliant

Lead Free

8541.29.00.75

260

40

R-PDSO-G4

Not Qualified

SINGLE

SWITCHING

130MHz

1A

unknown

FZT649 vs FZT694BTC