Diodes Incorporated FZT657TA

FZT657TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 100mA 5V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 500mA for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 30MHz.This device can take an input voltage of 300V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.

FZT657TA Features
the DC current gain for this device is 50 @ 100mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 30MHz


FZT657TA Applications
There are a lot of Diodes Incorporated
FZT657TA applications of single BJT transistors.


Inverter
Interface
Driver
Muting