Diodes Incorporated FZT649TA
- Part Number:
- FZT649TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2462931-FZT649TA
- Description:
- TRANS NPN 25V 3A SOT-223
- Datasheet:
- FZT649TA
Diodes Incorporated FZT649TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FZT649TA.
- Factory Lead Time15 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2006
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC25V
- Max Power Dissipation2W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codenot_compliant
- Current Rating3A
- Frequency240MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFZT649
- Qualification StatusNot Qualified
- Number of Elements1
- Voltage25V
- Element ConfigurationSingle
- Current3A
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product240MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)25V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1A 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 300mA, 3A
- Collector Emitter Breakdown Voltage25V
- Transition Frequency240MHz
- Collector Emitter Saturation Voltage400mV
- Max Breakdown Voltage25V
- Collector Base Voltage (VCBO)35V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current3A
- Height1.65mm
- Length6.7mm
- Width3.7mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FZT649TA Overview
This device has a DC current gain of 100 @ 1A 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 400mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 3A is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 3A.In this part, there is a transition frequency of 240MHz.As a result, it can handle voltages as low as 25V volts.The maximum collector current is 3A volts.
FZT649TA Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 240MHz
FZT649TA Applications
There are a lot of Diodes Incorporated
FZT649TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 1A 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 400mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 3A is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 3A.In this part, there is a transition frequency of 240MHz.As a result, it can handle voltages as low as 25V volts.The maximum collector current is 3A volts.
FZT649TA Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 240MHz
FZT649TA Applications
There are a lot of Diodes Incorporated
FZT649TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FZT649TA More Descriptions
Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
Trans GP BJT NPN 25V 3A 3000mW Automotive 4-Pin(3 Tab) SOT-223 T/R
FZT649 Series NPN 3 A 25 V SMT Silicon High Performance Transistor - SOT-223
NPN Transistor,3A,25V, SOT223 | Diodes Inc FZT649TA
Trans GP BJT NPN 25V 3A 3000mW Automotive 4-Pin(3 Tab) SOT-223 T/R
FZT649 Series NPN 3 A 25 V SMT Silicon High Performance Transistor - SOT-223
NPN Transistor,3A,25V, SOT223 | Diodes Inc FZT649TA
The three parts on the right have similar specifications to FZT649TA.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberQualification StatusNumber of ElementsVoltageElement ConfigurationCurrentPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthRoHS StatusLead FreeTerminal FinishAdditional FeatureReference StandardConfigurationPower - MaxFrequency - TransitionHTS CodeJESD-30 CodeREACH SVHCTerminationhFE MinRadiation HardeningView Compare
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FZT649TA15 WeeksTinSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3noActive1 (Unlimited)4EAR99Other Transistors25V2WDUALGULL WING260not_compliant3A240MHz40FZT649Not Qualified125VSingle3A2WCOLLECTORSWITCHING240MHzNPNNPN25V3A100 @ 1A 2V100nA ICBO600mV @ 300mA, 3A25V240MHz400mV25V35V5V3A1.65mm6.7mm3.7mmROHS3 CompliantLead Free-------------
-
13 Weeks-Surface MountSurface MountTO-261-4, TO-261AA4-SILICON-55°C~150°C TJTape & Reel (TR)1997e3noActive1 (Unlimited)4EAR99Other Transistors-3WDUALGULL WING260not_compliant--40--1----COLLECTOR--NPNNPN600mV3A100 @ 500mA 2V100nA ICBO600mV @ 300mA, 3A60V175MHz-60V------ROHS3 Compliant-Matte Tin (Sn)HIGH RELIABILITYAEC-Q101SINGLE3W175MHz------
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--Surface MountSurface MountTO-261-4, TO-261AA--SILICON-55°C~150°C TJTape & Reel (TR)2012e3-Obsolete1 (Unlimited)4EAR99-20V2WDUALGULL WING260-3A-40FZT689Not Qualified1---2WCOLLECTORSWITCHING-NPNNPN450mV3A400 @ 2A 2V100nA ICBO450mV @ 20mA, 3A20V150MHz--20V5V3A---RoHS CompliantLead FreeMatte Tin (Sn)--SINGLE-150MHz8541.29.00.75R-PDSO-G4No SVHC---
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13 WeeksTinSurface MountSurface MountTO-261-4, TO-261AA37.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99Other Transistors70V2WDUALGULL WING260-1A-40FZT692-1-Single-2WCOLLECTORSWITCHING150MHzNPNNPN70V2A150 @ 1A 2V100nA500mV @ 200mA, 2A70V150MHz500mV70V70V5V2A1.65mm6.7mm3.7mmROHS3 CompliantLead Free-HIGH RELIABILITY-----R-PDSO-G4No SVHCSMD/SMT400No
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