Fairchild/ON Semiconductor FQPF8N80C
- Part Number:
- FQPF8N80C
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2483137-FQPF8N80C
- Description:
- MOSFET N-CH 800V 8A TO-220F
- Datasheet:
- FQPF8N80C
Fairchild/ON Semiconductor FQPF8N80C technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQPF8N80C.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Weight2.27g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesQFET®
- Published2003
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance1.55Ohm
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC800V
- TechnologyMOSFET (Metal Oxide)
- Current Rating8A
- Number of Elements1
- Power Dissipation-Max59W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation59W
- Case ConnectionISOLATED
- Turn On Delay Time40 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.55 Ω @ 4A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2050pF @ 25V
- Current - Continuous Drain (Id) @ 25°C8A Tc
- Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
- Rise Time110ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)70 ns
- Turn-Off Delay Time65 ns
- Continuous Drain Current (ID)8A
- Threshold Voltage5V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)30V
- Drain Current-Max (Abs) (ID)8A
- Drain to Source Breakdown Voltage800V
- Avalanche Energy Rating (Eas)850 mJ
- Height9.19mm
- Length10.16mm
- Width4.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FQPF8N80C Description
This N-channel enhanced power MOSFET is produced using on Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specifically tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
FQPF8N80C Features 8A, 800V, RDS(on) = 1.55Ω(Max.) @VGS = 10 V, ID = 4A Low gate charge ( Typ. 35nC) Low Crss ( Typ. 13pF) 100% avalanche tested RoHS compliant
FQPF8N80C Applications
LCD TV LED TV Home Audio System Components Lighting Desktop PC AC-DC Merchant Power Supply - Desktop PC
This N-channel enhanced power MOSFET is produced using on Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specifically tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
FQPF8N80C Features 8A, 800V, RDS(on) = 1.55Ω(Max.) @VGS = 10 V, ID = 4A Low gate charge ( Typ. 35nC) Low Crss ( Typ. 13pF) 100% avalanche tested RoHS compliant
FQPF8N80C Applications
LCD TV LED TV Home Audio System Components Lighting Desktop PC AC-DC Merchant Power Supply - Desktop PC
FQPF8N80C More Descriptions
Power MOSFET, N-Channel, QFET®, 800 V, 8 A, 1.55 Ω, TO-220F
Trans MOSFET N-CH 800V 8A 3-Pin(3 Tab) TO-220F Rail - Rail/Tube
Power Field-Effect Transistor, 8A I(D), 800V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.55ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:8A; No. of Transistors:1; Package / Case:TO-220F; Power Dissipation Pd:59W; Power Dissipation Pd:59W; Pulse Current Idm:32A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Trans MOSFET N-CH 800V 8A 3-Pin(3 Tab) TO-220F Rail - Rail/Tube
Power Field-Effect Transistor, 8A I(D), 800V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.55ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:8A; No. of Transistors:1; Package / Case:TO-220F; Power Dissipation Pd:59W; Power Dissipation Pd:59W; Pulse Current Idm:32A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
The three parts on the right have similar specifications to FQPF8N80C.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageAvalanche Energy Rating (Eas)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationDrain to Source Voltage (Vdss)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinView Compare
-
FQPF8N80CACTIVE (Last Updated: 3 days ago)8 WeeksThrough HoleThrough HoleTO-220-3 Full Pack32.27gSILICON-55°C~150°C TJTubeQFET®2003e3yesActive1 (Unlimited)3EAR991.55OhmTin (Sn)FET General Purpose Power800VMOSFET (Metal Oxide)8A159W TcSingleENHANCEMENT MODE59WISOLATED40 nsN-ChannelSWITCHING1.55 Ω @ 4A, 10V5V @ 250μA2050pF @ 25V8A Tc45nC @ 10V110ns10V±30V70 ns65 ns8A5VTO-220AB30V8A800V850 mJ9.19mm10.16mm4.7mmNo SVHCNoROHS3 CompliantLead Free--------------
-
---Through HoleTO-220-3 Full Pack--SILICON-55°C~150°C TJTubeQFET®-e3yesObsolete1 (Unlimited)3--MATTE TIN--MOSFET (Metal Oxide)-156W Tc-ENHANCEMENT MODE-ISOLATED-N-ChannelSWITCHING430m Ω @ 6.25A, 10V5V @ 250μA2.3pF @ 25V12.5A Tc60nC @ 10V-10V±30V----TO-220AB-13A-860 mJ-----ROHS3 Compliant-NOSINGLENOT SPECIFIEDunknownNOT SPECIFIED3R-PSFM-T3COMMERCIALSINGLE WITH BUILT-IN DIODE500V0.48Ohm52A500V
-
---Through HoleTO-220-3 Full Pack--SILICON-55°C~150°C TJTubeQFET®-e3yesObsolete1 (Unlimited)3--TIN--MOSFET (Metal Oxide)-155W Tc-ENHANCEMENT MODE-ISOLATED-N-ChannelSWITCHING75m Ω @ 8.75A, 10V2V @ 250μA3.9pF @ 25V17.5A Tc72nC @ 5V-5V 10V±20V------17.5A-640 mJ-----ROHS3 Compliant-NOSINGLENOT SPECIFIEDunknownNOT SPECIFIED3R-PSFM-T3COMMERCIALSINGLE WITH BUILT-IN DIODE200V0.08Ohm70A200V
-
ACTIVE, NOT REC (Last Updated: 3 days ago)-Through HoleThrough HoleTO-220-3 Full Pack32.27gSILICON-55°C~150°C TJTubeQFET®2007e3yesObsolete1 (Unlimited)3EAR99-Tin (Sn)-600VMOSFET (Metal Oxide)12A151W TcSingleENHANCEMENT MODE51WISOLATED-N-ChannelSWITCHING650m Ω @ 6A, 10V4V @ 250μA2290pF @ 25V12A Tc63nC @ 10V85ns10V±30V90 ns155 ns12A4VTO-220AB30V-600V870 mJ---No SVHC-RoHS CompliantLead Free--NOT SPECIFIED-NOT SPECIFIED--Not Qualified--0.65Ohm48A-
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
10 April 2024
STM32F103CBT6 Microcontroller Features, Application and STM32F103CBT6 vs CKS32F103C8T6
Ⅰ. Description of STM32F103CBT6Ⅱ. Low-power modes of STM32F103CBT6Ⅲ. Functional features of STM32F103CBT6Ⅳ. Application fields of STM32F103CBT6Ⅴ. GPIO attributes and configuration process of STM32F103CBT6Ⅵ. How to program and debug... -
11 April 2024
A Complete Guide to IR2104 Half-Bridge Driver
Ⅰ. IR2104 descriptionⅡ. IR2104 half-bridge driver circuit characteristicsⅢ. IR2104 half-bridge driver working principleⅣ. Practical application of IR2104Ⅴ. Recommended operating conditions of IR2104Ⅵ. What are the heat dissipation measures... -
11 April 2024
74LS138 Decoder Working Principle, Application Scenarios and 7AHC138 vs 74LS138
Ⅰ. Introduction to 74LS138Ⅱ. What is the meaning of the 74LS138 naming?Ⅲ. Working principle of 74LS138Ⅳ. Example of application circuit diagram of 74LS138Ⅴ. Application scenarios of 74LS138 decoderⅥ.... -
12 April 2024
L298N DC Motor Drive Module: Features, Pinout, Usage and Application
Ⅰ. Introduction to L298NⅡ. Functional features of L298NⅢ. L298N circuit diagramⅣ. Control method of L298NⅤ. Pin diagram and functions of L298NⅥ. How to use L298N?Ⅶ. How to use...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.