Fairchild/ON Semiconductor FQPF85N06

Name: FQPF85N06
Brand: Fairchild/ON Semiconductor
SKU: 2483268-FQPF85N06
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FQPF85N06

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2483268-FQPF85N06

Description:: MOSFET N-CH 60V 53A TO-220F

ECAD Model:

Datasheet:: FQPF85N06

Specifications

Fairchild/ON Semiconductor FQPF85N06 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQPF85N06.

Package / Case
TO-220F
Packaging
Tube-packed
RoHS Status
RoHS Compliant

Description

FQPF85N06 Overview
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet FQPF85N06 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of FQPF85N06. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

FQPF85N06 More Descriptions

Power MOSFET, N-Channel, QFET®, 60 V, 53 A, 10 mΩ, TO-220F
N-Channel 60 V 0.01 Ohm Through Hole Mosfet - TO-220F
Trans MOSFET N-CH 60V 53A 3-Pin(3 Tab) TO-220F Rail - Rail/Tube
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:60V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:62W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:53A; Package / Case:TO-220F; Power Dissipation Pd:62W; Power Dissipation Pd:62W; Pulse Current Idm:212A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Product Comparison

The three parts on the right have similar specifications to FQPF85N06.

Image

Part Number

Manufacturer

Package / Case

Packaging

RoHS Status

Mounting Type

Surface Mount

Transistor Element Material

Operating Temperature

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

HTS Code

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Supplier Device Package

Lifecycle Status

Mount

Number of Pins

Weight

Pbfree Code

Voltage - Rated DC

Current Rating

Qualification Status

Element Configuration

Power Dissipation

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

REACH SVHC

Lead Free

View Compare
FQPF85N06

Fairchild/ON Semiconductor

TO-220F

Tube-packed

RoHS Compliant

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FQPF10N60CF

Fairchild/ON Semiconductor

TO-220-3 Full Pack

Tube

RoHS Compliant

Through Hole

NO

SILICON

-55°C~150°C TJ

FRFET®

2007

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

8541.29.00.95

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

compliant

NOT SPECIFIED

R-PSFM-T3

1

SINGLE WITH BUILT-IN DIODE

50W Tc

ENHANCEMENT MODE

ISOLATED

N-Channel

SWITCHING

800m Ω @ 4.5A, 10V

4V @ 250μA

2040pF @ 25V

9A Tc

57nC @ 10V

600V

10V

±30V

TO-220AB

9.5A

0.73Ohm

38A

600V

700 mJ

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FQPF85N06 vs FQPF10N60CF
FQPF10N60CYDTU

Fairchild/ON Semiconductor

TO-220-3 Full Pack

Tube

-

Through Hole

-

-

-55°C~150°C TJ

QFET®

2007

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

50W Tc

-

-

N-Channel

-

730mOhm @ 4.75A, 10V

4V @ 250μA

2040pF @ 25V

9.5A Tc

57nC @ 10V

600V

10V

±30V

-

-

-

-

-

-

TO-220F

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FQPF85N06 vs FQPF10N60CYDTU
FQPF12N60C

Fairchild/ON Semiconductor

TO-220-3 Full Pack

Tube

RoHS Compliant

Through Hole

-

SILICON

-55°C~150°C TJ

QFET®

2007

e3

Obsolete

1 (Unlimited)

3

EAR99

Tin (Sn)

-

MOSFET (Metal Oxide)

-

NOT SPECIFIED

-

NOT SPECIFIED

-

1

-

51W Tc

ENHANCEMENT MODE

ISOLATED

N-Channel

SWITCHING

650m Ω @ 6A, 10V

4V @ 250μA

2290pF @ 25V

12A Tc

63nC @ 10V

-

10V

±30V

TO-220AB

-

0.65Ohm

48A

-

870 mJ

-

ACTIVE, NOT REC (Last Updated: 3 days ago)

Through Hole

3

2.27g

yes

600V

12A

Not Qualified

Single

51W

85ns

90 ns

155 ns

12A

4V

30V

600V

No SVHC

Lead Free

FQPF85N06 vs FQPF12N60C