Fairchild/ON Semiconductor FQPF6N50
- Part Number:
- FQPF6N50
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3586659-FQPF6N50
- Description:
- MOSFET N-CH 500V 3.6A TO-220F
- ECAD Model:
-
- Datasheet:
- FQPF6N50
Fairchild/ON Semiconductor FQPF6N50 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQPF6N50.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesQFET®
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT APPLICABLE
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT APPLICABLE
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max42W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.3 Ω @ 1.8A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds790pF @ 25V
- Current - Continuous Drain (Id) @ 25°C3.6A Tc
- Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
- Drain to Source Voltage (Vdss)500V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Drain Current-Max (Abs) (ID)3.6A
- Pulsed Drain Current-Max (IDM)14.4A
- DS Breakdown Voltage-Min500V
- Avalanche Energy Rating (Eas)340 mJ
- RoHS StatusROHS3 Compliant
FQPF6N50 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 340 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 790pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 3.6A.Peak drain current is 14.4A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 500V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
FQPF6N50 Features
the avalanche energy rating (Eas) is 340 mJ
based on its rated peak drain current 14.4A.
a 500V drain to source voltage (Vdss)
FQPF6N50 Applications
There are a lot of Rochester Electronics, LLC
FQPF6N50 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 340 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 790pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 3.6A.Peak drain current is 14.4A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 500V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
FQPF6N50 Features
the avalanche energy rating (Eas) is 340 mJ
based on its rated peak drain current 14.4A.
a 500V drain to source voltage (Vdss)
FQPF6N50 Applications
There are a lot of Rochester Electronics, LLC
FQPF6N50 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
FQPF6N50 More Descriptions
MOSFET N-CH 500V 3.6A TO-220F
MOSFETs 500V N-Channel QFET
OEMs, CMs ONLY (NO BROKERS)
Contact for details
MOSFETs 500V N-Channel QFET
OEMs, CMs ONLY (NO BROKERS)
Contact for details
The three parts on the right have similar specifications to FQPF6N50.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusPublishedECCN CodeHTS CodeJEDEC-95 CodeDrain-source On Resistance-MaxSupplier Device PackageMountVoltage - Rated DCCurrent RatingElement ConfigurationPower DissipationRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageLead FreeView Compare
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FQPF6N50Through HoleTO-220-3 Full PackNOSILICON-55°C~150°C TJTubeQFET®e3yesObsolete1 (Unlimited)3MATTE TINMOSFET (Metal Oxide)SINGLENOT APPLICABLEunknownNOT APPLICABLE3R-PSFM-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE42W TcENHANCEMENT MODEISOLATEDN-ChannelSWITCHING1.3 Ω @ 1.8A, 10V5V @ 250μA790pF @ 25V3.6A Tc22nC @ 10V500V10V±30V3.6A14.4A500V340 mJROHS3 Compliant------------------- -
Through HoleTO-220-3 Full PackNOSILICON-55°C~150°C TJTubeFRFET®e3-Obsolete1 (Unlimited)3Matte Tin (Sn)MOSFET (Metal Oxide)SINGLENOT SPECIFIEDcompliantNOT SPECIFIED-R-PSFM-T3-1SINGLE WITH BUILT-IN DIODE50W TcENHANCEMENT MODEISOLATEDN-ChannelSWITCHING800m Ω @ 4.5A, 10V4V @ 250μA2040pF @ 25V9A Tc57nC @ 10V600V10V±30V9.5A38A600V700 mJRoHS Compliant2007EAR998541.29.00.95TO-220AB0.73Ohm-------------
-
Through HoleTO-220-3 Full Pack---55°C~150°C TJTubeQFET®--Obsolete1 (Unlimited)--MOSFET (Metal Oxide)---------50W Tc--N-Channel-730mOhm @ 4.75A, 10V4V @ 250μA2040pF @ 25V9.5A Tc57nC @ 10V600V10V±30V-----2007----TO-220F------------
-
Through HoleTO-220-3 Full Pack---55°C~150°C TJTubeQFET®--Obsolete1 (Unlimited)--MOSFET (Metal Oxide)---------50W Tc--N-Channel-150m Ω @ 5.9A, 10V5V @ 250μA1600pF @ 25V11.8A Tc40nC @ 10V-10V±30V----RoHS Compliant------Through Hole100V19ASingle50W190ns80 ns55 ns11.8A30V200VLead Free
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