Fairchild/ON Semiconductor FQPF5N60C

Name: FQPF5N60C
Brand: Fairchild/ON Semiconductor
SKU: 2480467-FQPF5N60C
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FQPF5N60C

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2480467-FQPF5N60C

Description:: MOSFET N-CH 600V 4.5A TO-220F

ECAD Model:

Datasheet:: FQPF5N60C

Specifications

Fairchild/ON Semiconductor FQPF5N60C technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQPF5N60C.

Lifecycle Status
ACTIVE, NOT REC (Last Updated: 4 days ago)
Factory Lead Time
4 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Weight
2.27g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
QFET®
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Voltage - Rated DC
600V
Technology
MOSFET (Metal Oxide)
Current Rating
4.5A
Number of Elements
1
Power Dissipation-Max
33W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
33W
Case Connection
ISOLATED
Turn On Delay Time
10 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2.5 Ω @ 2.25A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
670pF @ 25V
Current - Continuous Drain (Id) @ 25°C
4.5A Tc
Gate Charge (Qg) (Max) @ Vgs
19nC @ 10V
Rise Time
42ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
46 ns
Turn-Off Delay Time
38 ns
Continuous Drain Current (ID)
4.5A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
600V
Height
9.19mm
Length
10.16mm
Width
4.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FQPF5N60C Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

FQPF5N60C Features
?4.5 A, 600 V, RDS(on), 2.5 Q, @VGS= 10 V, lD = 2.25 A
? Minimal Gate Fee (Typ. 15 nC)
?Small Crss (Typ. 6.5 pF)
?Avalanche tested in full

FQPF5N60C Applications
Switching applications

FQPF5N60C More Descriptions

Power MOSFET, N-Channel, QFET®, 600 V, 4.5 A, 2.5 Ω, TO-220F
Trans MOSFET N-CH 600V 4.5A 3-Pin(3 Tab) TO-220FP Tube
MOSFET, N, TO-220F; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 2.5ohm; Rds(on) Test V; Available until stocks are exhausted Alternative available
Power Field-Effect Transistor, 4.5A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, N, To-220F; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:4.5A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:33W Rohs Compliant: Yes |Onsemi FQPF5N60C.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Product Comparison

The three parts on the right have similar specifications to FQPF5N60C.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Supplier Device Package

View Compare
FQPF5N60C

Fairchild/ON Semiconductor

ACTIVE, NOT REC (Last Updated: 4 days ago)

4 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

2.27g

SILICON

-55°C~150°C TJ

Tube

QFET®

2013

e3

yes

Not For New Designs

1 (Unlimited)

3

EAR99

Tin (Sn)

600V

MOSFET (Metal Oxide)

4.5A

1

33W Tc

Single

ENHANCEMENT MODE

33W

ISOLATED

10 ns

N-Channel

SWITCHING

2.5 Ω @ 2.25A, 10V

4V @ 250μA

670pF @ 25V

4.5A Tc

19nC @ 10V

42ns

10V

±30V

46 ns

38 ns

4.5A

4V

TO-220AB

30V

600V

9.19mm

10.16mm

4.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FQPF34N20L

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-220-3 Full Pack

-

-

SILICON

-55°C~150°C TJ

Tube

QFET®

-

e3

yes

Obsolete

1 (Unlimited)

3

-

TIN

-

MOSFET (Metal Oxide)

-

1

55W Tc

-

ENHANCEMENT MODE

-

ISOLATED

-

N-Channel

SWITCHING

75m Ω @ 8.75A, 10V

2V @ 250μA

3.9pF @ 25V

17.5A Tc

72nC @ 5V

-

5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

NO

SINGLE

NOT SPECIFIED

unknown

NOT SPECIFIED

3

R-PSFM-T3

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

200V

17.5A

0.08Ohm

70A

200V

640 mJ

-

FQPF5N60C vs FQPF34N20L
FQPF10N60CYDTU

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-220-3 Full Pack

-

-

-

-55°C~150°C TJ

Tube

QFET®

2007

-

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

50W Tc

-

-

-

-

-

N-Channel

-

730mOhm @ 4.75A, 10V

4V @ 250μA

2040pF @ 25V

9.5A Tc

57nC @ 10V

-

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

600V

-

-

-

-

-

TO-220F

FQPF5N60C vs FQPF10N60CYDTU
FQPF19N20T

Fairchild/ON Semiconductor

-

-

Through Hole

Through Hole

TO-220-3 Full Pack

-

-

-

-55°C~150°C TJ

Tube

QFET®

-

-

-

Obsolete

1 (Unlimited)

-

-

-

100V

MOSFET (Metal Oxide)

19A

-

50W Tc

Single

-

50W

-

-

N-Channel

-

150m Ω @ 5.9A, 10V

5V @ 250μA

1600pF @ 25V

11.8A Tc

40nC @ 10V

190ns

10V

±30V

80 ns

55 ns

11.8A

-

-

30V

200V

-

-

-

-

-

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FQPF5N60C vs FQPF19N20T