Fairchild/ON Semiconductor FQPF4N90C
- Part Number:
- FQPF4N90C
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2848832-FQPF4N90C
- Description:
- MOSFET N-CH 900V 4A TO-220F
- Datasheet:
- FQPF4N90C
Fairchild/ON Semiconductor FQPF4N90C technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQPF4N90C.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Weight2.27g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesQFET®
- Published2003
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- Voltage - Rated DC900V
- TechnologyMOSFET (Metal Oxide)
- Current Rating4A
- Number of Elements1
- Power Dissipation-Max47W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation47W
- Case ConnectionISOLATED
- Turn On Delay Time25 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4.2 Ω @ 2A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds960pF @ 25V
- Current - Continuous Drain (Id) @ 25°C4A Tc
- Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
- Rise Time50ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)35 ns
- Turn-Off Delay Time40 ns
- Continuous Drain Current (ID)4A
- Threshold Voltage5V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)30V
- Drain Current-Max (Abs) (ID)4A
- Drain to Source Breakdown Voltage900V
- Avalanche Energy Rating (Eas)570 mJ
- Height9.19mm
- Length10.16mm
- Width4.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FQPF4N90C Description
The N-Channel enhancement mode power MOSFET FQPF4N90C is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQPF4N90C Features
4A, 900V, RDS(on) = 4.2Ω(Max.) @VGS = 10 V, ID = 2A
Low gate charge ( Typ. 17nC)
Low Crss ( Typ. 5.6pF)
100% avalanche tested
FQPF4N90C Applications
LCD TV
LED TV
Desktop PC
AC-DC Merchant Power Supply - Desktop PC
The N-Channel enhancement mode power MOSFET FQPF4N90C is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQPF4N90C Features
4A, 900V, RDS(on) = 4.2Ω(Max.) @VGS = 10 V, ID = 2A
Low gate charge ( Typ. 17nC)
Low Crss ( Typ. 5.6pF)
100% avalanche tested
FQPF4N90C Applications
LCD TV
LED TV
Desktop PC
AC-DC Merchant Power Supply - Desktop PC
FQPF4N90C More Descriptions
Power MOSFET, N-Channel, QFET®, 900 V, 4 A, 4.2 Ω, TO-220F
Single N-Channel 900 V 4.2 Ohm 22 nC 47 W DMOS Flange Mount Mosfet - TO-220F
Power Field-Effect Transistor, 4A I(D), 900V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 900V, 4A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 3.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Single N-Channel 900 V 4.2 Ohm 22 nC 47 W DMOS Flange Mount Mosfet - TO-220F
Power Field-Effect Transistor, 4A I(D), 900V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 900V, 4A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 3.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
The three parts on the right have similar specifications to FQPF4N90C.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageAvalanche Energy Rating (Eas)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationDrain to Source Voltage (Vdss)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinSupplier Device PackageView Compare
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FQPF4N90CACTIVE (Last Updated: 3 days ago)4 WeeksTinThrough HoleThrough HoleTO-220-3 Full Pack32.27gSILICON-55°C~150°C TJTubeQFET®2003e3yesActive1 (Unlimited)3EAR99FET General Purpose Power900VMOSFET (Metal Oxide)4A147W TcSingleENHANCEMENT MODE47WISOLATED25 nsN-ChannelSWITCHING4.2 Ω @ 2A, 10V5V @ 250μA960pF @ 25V4A Tc22nC @ 10V50ns10V±30V35 ns40 ns4A5VTO-220AB30V4A900V570 mJ9.19mm10.16mm4.7mmNo SVHCNoROHS3 CompliantLead Free--------------
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----Through HoleTO-220-3 Full Pack--SILICON-55°C~150°C TJTubeQFET®-e3yesObsolete1 (Unlimited)3---MOSFET (Metal Oxide)-128W Tc-ENHANCEMENT MODE---P-ChannelSWITCHING10.5 Ω @ 515mA, 10V5V @ 250μA350pF @ 25V1.03A Tc14nC @ 10V-10V±30V------1.03A-110 mJ-----ROHS3 Compliant-NOMATTE TINSINGLENOT APPLICABLENOT APPLICABLE3R-PSFM-T3COMMERCIALSINGLE WITH BUILT-IN DIODE500V4.12A500V-
-
----Through HoleTO-220-3 Full Pack----55°C~150°C TJTubeQFET®2007--Obsolete1 (Unlimited)----MOSFET (Metal Oxide)--50W Tc-----N-Channel-730mOhm @ 4.75A, 10V4V @ 250μA2040pF @ 25V9.5A Tc57nC @ 10V-10V±30V-------------------------600V--TO-220F
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---Through HoleThrough HoleTO-220-3 Full Pack----55°C~150°C TJTubeQFET®---Obsolete1 (Unlimited)---100VMOSFET (Metal Oxide)19A-50W TcSingle-50W--N-Channel-150m Ω @ 5.9A, 10V5V @ 250μA1600pF @ 25V11.8A Tc40nC @ 10V190ns10V±30V80 ns55 ns11.8A--30V-200V------RoHS CompliantLead Free-------------
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