FQPF4N90C

Fairchild/ON Semiconductor FQPF4N90C

Part Number:
FQPF4N90C
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2848832-FQPF4N90C
Description:
MOSFET N-CH 900V 4A TO-220F
ECAD Model:
Datasheet:
FQPF4N90C

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Specifications
Fairchild/ON Semiconductor FQPF4N90C technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQPF4N90C.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Number of Pins
    3
  • Weight
    2.27g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    QFET®
  • Published
    2003
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    900V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    4A
  • Number of Elements
    1
  • Power Dissipation-Max
    47W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    47W
  • Case Connection
    ISOLATED
  • Turn On Delay Time
    25 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4.2 Ω @ 2A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    960pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    4A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    22nC @ 10V
  • Rise Time
    50ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    35 ns
  • Turn-Off Delay Time
    40 ns
  • Continuous Drain Current (ID)
    4A
  • Threshold Voltage
    5V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    30V
  • Drain Current-Max (Abs) (ID)
    4A
  • Drain to Source Breakdown Voltage
    900V
  • Avalanche Energy Rating (Eas)
    570 mJ
  • Height
    9.19mm
  • Length
    10.16mm
  • Width
    4.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FQPF4N90C Description

The N-Channel enhancement mode power MOSFET FQPF4N90C is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQPF4N90C Features

4A, 900V, RDS(on) = 4.2Ω(Max.) @VGS = 10 V, ID = 2A
Low gate charge ( Typ. 17nC)
Low Crss ( Typ. 5.6pF)
100% avalanche tested
FQPF4N90C Applications

LCD TV
LED TV
Desktop PC
AC-DC Merchant Power Supply - Desktop PC
FQPF4N90C More Descriptions
Power MOSFET, N-Channel, QFET®, 900 V, 4 A, 4.2 Ω, TO-220F
Single N-Channel 900 V 4.2 Ohm 22 nC 47 W DMOS Flange Mount Mosfet - TO-220F
Power Field-Effect Transistor, 4A I(D), 900V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 900V, 4A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 3.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Product Comparison
The three parts on the right have similar specifications to FQPF4N90C.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Finish
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Configuration
    Drain to Source Voltage (Vdss)
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Supplier Device Package
    View Compare
  • FQPF4N90C
    FQPF4N90C
    ACTIVE (Last Updated: 3 days ago)
    4 Weeks
    Tin
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    2.27g
    SILICON
    -55°C~150°C TJ
    Tube
    QFET®
    2003
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    FET General Purpose Power
    900V
    MOSFET (Metal Oxide)
    4A
    1
    47W Tc
    Single
    ENHANCEMENT MODE
    47W
    ISOLATED
    25 ns
    N-Channel
    SWITCHING
    4.2 Ω @ 2A, 10V
    5V @ 250μA
    960pF @ 25V
    4A Tc
    22nC @ 10V
    50ns
    10V
    ±30V
    35 ns
    40 ns
    4A
    5V
    TO-220AB
    30V
    4A
    900V
    570 mJ
    9.19mm
    10.16mm
    4.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FQPF1P50
    -
    -
    -
    -
    Through Hole
    TO-220-3 Full Pack
    -
    -
    SILICON
    -55°C~150°C TJ
    Tube
    QFET®
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    28W Tc
    -
    ENHANCEMENT MODE
    -
    -
    -
    P-Channel
    SWITCHING
    10.5 Ω @ 515mA, 10V
    5V @ 250μA
    350pF @ 25V
    1.03A Tc
    14nC @ 10V
    -
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    1.03A
    -
    110 mJ
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    NO
    MATTE TIN
    SINGLE
    NOT APPLICABLE
    NOT APPLICABLE
    3
    R-PSFM-T3
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    500V
    4.12A
    500V
    -
  • FQPF10N60CYDTU
    -
    -
    -
    -
    Through Hole
    TO-220-3 Full Pack
    -
    -
    -
    -55°C~150°C TJ
    Tube
    QFET®
    2007
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    50W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    730mOhm @ 4.75A, 10V
    4V @ 250μA
    2040pF @ 25V
    9.5A Tc
    57nC @ 10V
    -
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    600V
    -
    -
    TO-220F
  • FQPF19N20T
    -
    -
    -
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    -
    -
    -
    -55°C~150°C TJ
    Tube
    QFET®
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    100V
    MOSFET (Metal Oxide)
    19A
    -
    50W Tc
    Single
    -
    50W
    -
    -
    N-Channel
    -
    150m Ω @ 5.9A, 10V
    5V @ 250μA
    1600pF @ 25V
    11.8A Tc
    40nC @ 10V
    190ns
    10V
    ±30V
    80 ns
    55 ns
    11.8A
    -
    -
    30V
    -
    200V
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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