Fairchild/ON Semiconductor FQPF47P06

Name: FQPF47P06
Brand: Fairchild/ON Semiconductor
SKU: 3070046-FQPF47P06
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FQPF47P06

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3070046-FQPF47P06

Description:: MOSFET P-CH 60V 30A TO-220F

ECAD Model:

Datasheet:: FQPF47P06

Specifications

Fairchild/ON Semiconductor FQPF47P06 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQPF47P06.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
9 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Weight
2.27g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
QFET®
Published
2001
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
-30A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
62W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
62W
Case Connection
ISOLATED
Turn On Delay Time
50 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
26m Ω @ 15A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3600pF @ 25V
Current - Continuous Drain (Id) @ 25°C
30A Tc
Gate Charge (Qg) (Max) @ Vgs
110nC @ 10V
Rise Time
450ns
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
195 ns
Turn-Off Delay Time
100 ns
Continuous Drain Current (ID)
30A
Threshold Voltage
-4V
Gate to Source Voltage (Vgs)
25V
Drain-source On Resistance-Max
0.026Ohm
Drain to Source Breakdown Voltage
-60V
Avalanche Energy Rating (Eas)
820 mJ
Height
9.19mm
Length
10.16mm
Width
4.7mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FQPF47P06 Description

The P-Channel enhancement mode power MOSFET FQPF47P06 is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. FQPF47P06 is suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

FQPF47P06 Features

-30A, -60V, RDS(on) = 26mΩ(Max.) @VGS = -10 V, ID = -15A
100% avalanche tested
175°C maximum junction temperature rating
Low gate charge ( Typ. 84nC)
Low Crss ( Typ. 320pF)

FQPF47P06 Applications

switched mode power supplies
audio amplifier
LCD TV
DC motor control
variable switching power applications

FQPF47P06 More Descriptions

Power MOSFET, P-Channel, QFET®, -60 V, -30 A, 26 mΩ, TO-220F
Trans MOSFET P-CH 60V 30A 3-Pin(3 Tab) TO-220F Rail - Rail/Tube
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Product Comparison

The three parts on the right have similar specifications to FQPF47P06.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Surface Mount

Terminal Finish

Terminal Position

Pin Count

JESD-30 Code

Configuration

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

HTS Code

View Compare
FQPF47P06

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

9 Weeks

Tin

Through Hole

Through Hole

TO-220-3 Full Pack

3

2.27g

SILICON

-55°C~175°C TJ

Tube

QFET®

2001

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

-60V

MOSFET (Metal Oxide)

NOT SPECIFIED

not_compliant

-30A

NOT SPECIFIED

Not Qualified

1

62W Tc

Single

ENHANCEMENT MODE

62W

ISOLATED

50 ns

P-Channel

SWITCHING

26m Ω @ 15A, 10V

4V @ 250μA

3600pF @ 25V

30A Tc

110nC @ 10V

450ns

60V

10V

±25V

195 ns

100 ns

30A

-4V

25V

0.026Ohm

-60V

820 mJ

9.19mm

10.16mm

4.7mm

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
FQPF13N50

Fairchild/ON Semiconductor

-

-

-

-

Through Hole

TO-220-3 Full Pack

-

-

SILICON

-55°C~150°C TJ

Tube

QFET®

-

e3

yes

Obsolete

1 (Unlimited)

3

-

-

-

MOSFET (Metal Oxide)

NOT SPECIFIED

unknown

-

NOT SPECIFIED

COMMERCIAL

1

56W Tc

-

ENHANCEMENT MODE

-

ISOLATED

-

N-Channel

SWITCHING

430m Ω @ 6.25A, 10V

5V @ 250μA

2.3pF @ 25V

12.5A Tc

60nC @ 10V

-

500V

10V

±30V

-

-

-

-

-

0.48Ohm

-

860 mJ

-

-

-

-

ROHS3 Compliant

-

NO

MATTE TIN

SINGLE

3

R-PSFM-T3

SINGLE WITH BUILT-IN DIODE

TO-220AB

13A

52A

500V

-

FQPF47P06 vs FQPF13N50
FQPF18N20V2

Fairchild/ON Semiconductor

-

-

-

-

Through Hole

TO-220-3 Full Pack

-

-

SILICON

-55°C~150°C TJ

Tube

QFET®

-

e3

yes

Obsolete

1 (Unlimited)

3

-

-

-

MOSFET (Metal Oxide)

NOT APPLICABLE

-

-

NOT APPLICABLE

COMMERCIAL

1

40W Tc

-

ENHANCEMENT MODE

-

ISOLATED

-

N-Channel

SWITCHING

140m Ω @ 9A, 10V

5V @ 250μA

1.08pF @ 25V

18A Tc

26nC @ 10V

-

200V

10V

±30V

-

-

-

-

-

0.14Ohm

-

340 mJ

-

-

-

-

ROHS3 Compliant

-

NO

MATTE TIN

SINGLE

3

R-PSFM-T3

SINGLE WITH BUILT-IN DIODE

-

18A

72A

200V

-

FQPF47P06 vs FQPF18N20V2
FQPF10N60CF

Fairchild/ON Semiconductor

-

-

-

-

Through Hole

TO-220-3 Full Pack

-

-

SILICON

-55°C~150°C TJ

Tube

FRFET®

2007

e3

-

Obsolete

1 (Unlimited)

3

EAR99

-

-

MOSFET (Metal Oxide)

NOT SPECIFIED

compliant

-

NOT SPECIFIED

-

1

50W Tc

-

ENHANCEMENT MODE

-

ISOLATED

-

N-Channel

SWITCHING

800m Ω @ 4.5A, 10V

4V @ 250μA

2040pF @ 25V

9A Tc

57nC @ 10V

-

600V

10V

±30V

-

-

-

-

-

0.73Ohm

-

700 mJ

-

-

-

-

RoHS Compliant

-

NO

Matte Tin (Sn)

SINGLE

-

R-PSFM-T3

SINGLE WITH BUILT-IN DIODE

TO-220AB

9.5A

38A

600V

8541.29.00.95

FQPF47P06 vs FQPF10N60CF