Fairchild/ON Semiconductor FQP47P06
- Part Number:
- FQP47P06
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2482967-FQP47P06
- Description:
- MOSFET P-CH 60V 47A TO-220
- Datasheet:
- TO220B03 Pkg Drawing
Fairchild/ON Semiconductor FQP47P06 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQP47P06.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight1.8g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesQFET®
- Published2001
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance26mOhm
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-60V
- TechnologyMOSFET (Metal Oxide)
- Current Rating-47A
- Number of Elements1
- Power Dissipation-Max160W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation160W
- Turn On Delay Time50 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs26m Ω @ 23.5A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3600pF @ 25V
- Current - Continuous Drain (Id) @ 25°C47A Tc
- Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
- Rise Time450ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±25V
- Fall Time (Typ)195 ns
- Turn-Off Delay Time100 ns
- Continuous Drain Current (ID)47A
- Threshold Voltage-4V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)25V
- Drain to Source Breakdown Voltage-60V
- Avalanche Energy Rating (Eas)820 mJ
- Nominal Vgs-4 V
- Height9.4mm
- Length10.1mm
- Width4.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FQP47P06 Applications
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconducto?’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
FQP47P06 Benefits - 47 A, - 60 V, RDS(on) = 26 m? @ VGS = - 10 V, ID = - 23.5 A Low Gate Charge (Typ. 84 nC) Low Crss ( yp. 320 pF) 100% Avalanche Tested 175°C Maximum Junction Temrature Rating.
FQP47P06 Benefits - 47 A, - 60 V, RDS(on) = 26 m? @ VGS = - 10 V, ID = - 23.5 A Low Gate Charge (Typ. 84 nC) Low Crss ( yp. 320 pF) 100% Avalanche Tested 175°C Maximum Junction Temrature Rating.
FQP47P06 More Descriptions
Power MOSFET, P-Channel, QFET®, -60 V, -47 A, 26 mΩ, TO-220
Trans MOSFET P-CH 60V 47A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
Transistor, P-channel, QFET MOSFET, -60V, -47A, 26 mOhm, 175C max, TO-220-3LD | ON Semiconductor FQP47P06
P-Channel 60 V 0.026 Ohm Through Hole Mosfet - TO-220
Power Field-Effect Transistor, 47A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:47A; On Resistance, Rds(on):0.026ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:3-TO-220 ;RoHS Compliant: Yes
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Trans MOSFET P-CH 60V 47A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
Transistor, P-channel, QFET MOSFET, -60V, -47A, 26 mOhm, 175C max, TO-220-3LD | ON Semiconductor FQP47P06
P-Channel 60 V 0.026 Ohm Through Hole Mosfet - TO-220
Power Field-Effect Transistor, 47A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:47A; On Resistance, Rds(on):0.026ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:3-TO-220 ;RoHS Compliant: Yes
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
The three parts on the right have similar specifications to FQP47P06.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageAvalanche Energy Rating (Eas)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureInput CapacitanceDrain to Source ResistanceRds On MaxSurface MountTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinView Compare
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FQP47P06ACTIVE (Last Updated: 3 days ago)8 WeeksThrough HoleThrough HoleTO-220-331.8gSILICON-55°C~175°C TJTubeQFET®2001e3yesActive1 (Unlimited)3EAR9926mOhmTin (Sn)Other Transistors-60VMOSFET (Metal Oxide)-47A1160W TcSingleENHANCEMENT MODE160W50 nsP-ChannelSWITCHING26m Ω @ 23.5A, 10V4V @ 250μA3600pF @ 25V47A Tc110nC @ 10V450ns60V10V±25V195 ns100 ns47A-4VTO-220AB25V-60V820 mJ-4 V9.4mm10.1mm4.7mmNo SVHCNoROHS3 CompliantLead Free--------------------
-
--Through HoleThrough HoleTO-220-33---55°C~150°C TJTubeQFET®2000--Obsolete1 (Unlimited)-----500VMOSFET (Metal Oxide)3.4A170W TcSingle-70W-N-Channel-2.7Ohm @ 1.7A, 10V5V @ 250μA460pF @ 25V3.4A Tc13nC @ 10V45ns500V10V±30V30 ns20 ns3.4A--30V500V-------RoHS CompliantLead FreeTO-220-3150°C-55°C460pF2.7Ohm2.7 Ω-------------
-
---Through HoleTO-220-3----55°C~175°C TJTubeQFET®2013--Obsolete1 (Unlimited)------MOSFET (Metal Oxide)--160W Tc----P-Channel-26mOhm @ 23.5A, 10V4V @ 250μA3600pF @ 25V47A Tc110nC @ 10V-60V10V±25V----------------TO-220-3------------------
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---Through HoleTO-220-3--SILICON-55°C~150°C TJTubeQFET®-e3yesObsolete1 (Unlimited)3--MATTE TIN--MOSFET (Metal Oxide)-1140W Tc-ENHANCEMENT MODE--N-ChannelSWITCHING3.3 Ω @ 2.1A, 10V5V @ 250μA1.1pF @ 25V4.2A Tc30nC @ 10V-900V10V±30V----TO-220AB--570 mJ------ROHS3 Compliant-------NOSINGLENOT APPLICABLEunknownNOT APPLICABLE3R-PSFM-T3COMMERCIALSINGLE WITH BUILT-IN DIODE4.2A3.1Ohm16.8A900V
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