FQP47P06

Fairchild/ON Semiconductor FQP47P06

Part Number:
FQP47P06
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2482967-FQP47P06
Description:
MOSFET P-CH 60V 47A TO-220
ECAD Model:
Datasheet:
TO220B03 Pkg Drawing

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Specifications
Fairchild/ON Semiconductor FQP47P06 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQP47P06.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Weight
    1.8g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    QFET®
  • Published
    2001
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    26mOhm
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -60V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    -47A
  • Number of Elements
    1
  • Power Dissipation-Max
    160W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    160W
  • Turn On Delay Time
    50 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    26m Ω @ 23.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3600pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    47A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    110nC @ 10V
  • Rise Time
    450ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±25V
  • Fall Time (Typ)
    195 ns
  • Turn-Off Delay Time
    100 ns
  • Continuous Drain Current (ID)
    47A
  • Threshold Voltage
    -4V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    25V
  • Drain to Source Breakdown Voltage
    -60V
  • Avalanche Energy Rating (Eas)
    820 mJ
  • Nominal Vgs
    -4 V
  • Height
    9.4mm
  • Length
    10.1mm
  • Width
    4.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FQP47P06 Applications This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconducto?’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

FQP47P06 Benefits - 47 A, - 60 V, RDS(on) = 26 m? @ VGS = - 10 V,  ID = - 23.5 A Low Gate Charge (Typ. 84 nC) Low Crss ( yp. 320 pF) 100% Avalanche Tested 175°C Maximum Junction Temrature Rating.

FQP47P06 More Descriptions
Power MOSFET, P-Channel, QFET®, -60 V, -47 A, 26 mΩ, TO-220
Trans MOSFET P-CH 60V 47A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
Transistor, P-channel, QFET MOSFET, -60V, -47A, 26 mOhm, 175C max, TO-220-3LD | ON Semiconductor FQP47P06
P-Channel 60 V 0.026 Ohm Through Hole Mosfet - TO-220
Power Field-Effect Transistor, 47A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:47A; On Resistance, Rds(on):0.026ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:3-TO-220 ;RoHS Compliant: Yes
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Product Comparison
The three parts on the right have similar specifications to FQP47P06.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Surface Mount
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Configuration
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    View Compare
  • FQP47P06
    FQP47P06
    ACTIVE (Last Updated: 3 days ago)
    8 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    1.8g
    SILICON
    -55°C~175°C TJ
    Tube
    QFET®
    2001
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    26mOhm
    Tin (Sn)
    Other Transistors
    -60V
    MOSFET (Metal Oxide)
    -47A
    1
    160W Tc
    Single
    ENHANCEMENT MODE
    160W
    50 ns
    P-Channel
    SWITCHING
    26m Ω @ 23.5A, 10V
    4V @ 250μA
    3600pF @ 25V
    47A Tc
    110nC @ 10V
    450ns
    60V
    10V
    ±25V
    195 ns
    100 ns
    47A
    -4V
    TO-220AB
    25V
    -60V
    820 mJ
    -4 V
    9.4mm
    10.1mm
    4.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FQP4N50
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -
    -55°C~150°C TJ
    Tube
    QFET®
    2000
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    500V
    MOSFET (Metal Oxide)
    3.4A
    1
    70W Tc
    Single
    -
    70W
    -
    N-Channel
    -
    2.7Ohm @ 1.7A, 10V
    5V @ 250μA
    460pF @ 25V
    3.4A Tc
    13nC @ 10V
    45ns
    500V
    10V
    ±30V
    30 ns
    20 ns
    3.4A
    -
    -
    30V
    500V
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    TO-220-3
    150°C
    -55°C
    460pF
    2.7Ohm
    2.7 Ω
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FQP47P06_NW82049
    -
    -
    -
    Through Hole
    TO-220-3
    -
    -
    -
    -55°C~175°C TJ
    Tube
    QFET®
    2013
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    160W Tc
    -
    -
    -
    -
    P-Channel
    -
    26mOhm @ 23.5A, 10V
    4V @ 250μA
    3600pF @ 25V
    47A Tc
    110nC @ 10V
    -
    60V
    10V
    ±25V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    TO-220-3
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FQP4N90
    -
    -
    -
    Through Hole
    TO-220-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tube
    QFET®
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    -
    -
    MATTE TIN
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    140W Tc
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    3.3 Ω @ 2.1A, 10V
    5V @ 250μA
    1.1pF @ 25V
    4.2A Tc
    30nC @ 10V
    -
    900V
    10V
    ±30V
    -
    -
    -
    -
    TO-220AB
    -
    -
    570 mJ
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    NO
    SINGLE
    NOT APPLICABLE
    unknown
    NOT APPLICABLE
    3
    R-PSFM-T3
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    4.2A
    3.1Ohm
    16.8A
    900V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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