Fairchild/ON Semiconductor FQD4P25TM_WS
- Part Number:
- FQD4P25TM_WS
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2481350-FQD4P25TM_WS
- Description:
- MOSFET P-CH 250V 3.1A DPAK
- Datasheet:
- FQD4P25TM_WS
Fairchild/ON Semiconductor FQD4P25TM_WS technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQD4P25TM_WS.
- Vgs(th) (Max) @ Id:5V @ 250µA
- Vgs (Max):±30V
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:D-Pak
- Series:QFET®
- Rds On (Max) @ Id, Vgs:2.1 Ohm @ 1.55A, 10V
- Power Dissipation (Max):2.5W (Ta), 45W (Tc)
- Packaging:Tape & Reel (TR)
- Package / Case:TO-252-3, DPak (2 Leads Tab), SC-63
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds:420pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs:14nC @ 10V
- FET Type:P-Channel
- FET Feature:-
- Drive Voltage (Max Rds On, Min Rds On):10V
- Drain to Source Voltage (Vdss):250V
- Current - Continuous Drain (Id) @ 25°C:3.1A (Tc)
Images are for reference only.See Product Specifications for product details.If you are interested to buy FQD4P25TM_WS.
FQD4P25TM_WS More Descriptions
Trans MOSFET P-CH 250V 3.1A 3-Pin(2 Tab) DPAK T/R
Power Field-Effect Transistor, 3.1A I(D), 250V, 2.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 3.1A I(D), 250V, 2.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
The three parts on the right have similar specifications to FQD4P25TM_WS.
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ImagePart NumberManufacturerVgs(th) (Max) @ Id:Vgs (Max):Technology:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power Dissipation (Max):Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drive Voltage (Max Rds On, Min Rds On):Drain to Source Voltage (Vdss):Current - Continuous Drain (Id) @ 25°C:Lifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageAvalanche Energy Rating (Eas)Radiation HardeningRoHS StatusLead FreeSupplier Device PackagePublishedView Compare
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FQD4P25TM_WS5V @ 250µA±30VMOSFET (Metal Oxide)D-PakQFET®2.1 Ohm @ 1.55A, 10V2.5W (Ta), 45W (Tc)Tape & Reel (TR)TO-252-3, DPak (2 Leads Tab), SC-63-55°C ~ 150°C (TJ)Surface Mount420pF @ 25V14nC @ 10VP-Channel-10V250V3.1A (Tc)--------------------------------------------------------
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------------------ACTIVE (Last Updated: 1 day ago)8 WeeksTinSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633260.37mgSILICON-55°C~150°C TJTape & Reel (TR)QFET®e3yesActive1 (Unlimited)2EAR99Other Transistors-400VMOSFET (Metal Oxide)GULL WING260-2.7A30R-PSSO-G212.5W Ta 50W TcSingleENHANCEMENT MODE2.5WDRAIN13 nsP-ChannelSWITCHING3.1 Ω @ 1.35A, 10V5V @ 250μA680pF @ 25V2.7A Tc23nC @ 10V55ns400V10V±30V37 ns35 ns2.7A30V-400V260 mJNoROHS3 CompliantLead Free--
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----------------------Surface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~150°C TJTape & Reel (TR)QFET®--Obsolete1 (Unlimited)----MOSFET (Metal Oxide)------2.5W Ta 30W Tc-----N-Channel-1.4Ohm @ 1.5A, 10V5V @ 250μA220pF @ 25V3A Tc6.5nC @ 10V-200V10V±30V---------D-Pak2016
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5V @ 250µA±30VMOSFET (Metal Oxide)D-PakQFET®3.1 Ohm @ 1.35A, 10V2.5W (Ta), 50W (Tc)Tape & Reel (TR)TO-252-3, DPak (2 Leads Tab), SC-63-55°C ~ 150°C (TJ)Surface Mount680pF @ 25V23nC @ 10VP-Channel-10V400V2.7A (Tc)-------------------------------------------------------
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