FQD4P25TM_WS

Fairchild/ON Semiconductor FQD4P25TM_WS

Part Number:
FQD4P25TM_WS
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2481350-FQD4P25TM_WS
Description:
MOSFET P-CH 250V 3.1A DPAK
ECAD Model:
Datasheet:
FQD4P25TM_WS

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Specifications
Fairchild/ON Semiconductor FQD4P25TM_WS technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQD4P25TM_WS.
  • Vgs(th) (Max) @ Id:
    5V @ 250µA
  • Vgs (Max):
    ±30V
  • Technology:
    MOSFET (Metal Oxide)
  • Supplier Device Package:
    D-Pak
  • Series:
    QFET®
  • Rds On (Max) @ Id, Vgs:
    2.1 Ohm @ 1.55A, 10V
  • Power Dissipation (Max):
    2.5W (Ta), 45W (Tc)
  • Packaging:
    Tape & Reel (TR)
  • Package / Case:
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Operating Temperature:
    -55°C ~ 150°C (TJ)
  • Mounting Type:
    Surface Mount
  • Input Capacitance (Ciss) (Max) @ Vds:
    420pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs:
    14nC @ 10V
  • FET Type:
    P-Channel
  • FET Feature:
    -
  • Drive Voltage (Max Rds On, Min Rds On):
    10V
  • Drain to Source Voltage (Vdss):
    250V
  • Current - Continuous Drain (Id) @ 25°C:
    3.1A (Tc)
Description
Images are for reference only.See Product Specifications for product details.If you are interested to buy FQD4P25TM_WS.
FQD4P25TM_WS More Descriptions
Trans MOSFET P-CH 250V 3.1A 3-Pin(2 Tab) DPAK T/R
Power Field-Effect Transistor, 3.1A I(D), 250V, 2.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Product Comparison
The three parts on the right have similar specifications to FQD4P25TM_WS.
  • Image
    Part Number
    Manufacturer
    Vgs(th) (Max) @ Id:
    Vgs (Max):
    Technology:
    Supplier Device Package:
    Series:
    Rds On (Max) @ Id, Vgs:
    Power Dissipation (Max):
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Input Capacitance (Ciss) (Max) @ Vds:
    Gate Charge (Qg) (Max) @ Vgs:
    FET Type:
    FET Feature:
    Drive Voltage (Max Rds On, Min Rds On):
    Drain to Source Voltage (Vdss):
    Current - Continuous Drain (Id) @ 25°C:
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Published
    View Compare
  • FQD4P25TM_WS
    FQD4P25TM_WS
    5V @ 250µA
    ±30V
    MOSFET (Metal Oxide)
    D-Pak
    QFET®
    2.1 Ohm @ 1.55A, 10V
    2.5W (Ta), 45W (Tc)
    Tape & Reel (TR)
    TO-252-3, DPak (2 Leads Tab), SC-63
    -55°C ~ 150°C (TJ)
    Surface Mount
    420pF @ 25V
    14nC @ 10V
    P-Channel
    -
    10V
    250V
    3.1A (Tc)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
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    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FQD4P40TM
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ACTIVE (Last Updated: 1 day ago)
    8 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    260.37mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Other Transistors
    -400V
    MOSFET (Metal Oxide)
    GULL WING
    260
    -2.7A
    30
    R-PSSO-G2
    1
    2.5W Ta 50W Tc
    Single
    ENHANCEMENT MODE
    2.5W
    DRAIN
    13 ns
    P-Channel
    SWITCHING
    3.1 Ω @ 1.35A, 10V
    5V @ 250μA
    680pF @ 25V
    2.7A Tc
    23nC @ 10V
    55ns
    400V
    10V
    ±30V
    37 ns
    35 ns
    2.7A
    30V
    -400V
    260 mJ
    No
    ROHS3 Compliant
    Lead Free
    -
    -
  • FQD4N20TF
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    2.5W Ta 30W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    1.4Ohm @ 1.5A, 10V
    5V @ 250μA
    220pF @ 25V
    3A Tc
    6.5nC @ 10V
    -
    200V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    D-Pak
    2016
  • FQD4P40TM_AM002
    5V @ 250µA
    ±30V
    MOSFET (Metal Oxide)
    D-Pak
    QFET®
    3.1 Ohm @ 1.35A, 10V
    2.5W (Ta), 50W (Tc)
    Tape & Reel (TR)
    TO-252-3, DPak (2 Leads Tab), SC-63
    -55°C ~ 150°C (TJ)
    Surface Mount
    680pF @ 25V
    23nC @ 10V
    P-Channel
    -
    10V
    400V
    2.7A (Tc)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
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Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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