Diodes Incorporated FMMTA92TC
- Part Number:
- FMMTA92TC
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2846879-FMMTA92TC
- Description:
- TRANS PNP 300V 0.2A SOT23-3
- ECAD Model:
-
- Datasheet:
- FMMTA92TC
Diodes Incorporated FMMTA92TC technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FMMTA92TC.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Weight7.994566mg
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2017
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Voltage - Rated DC-300V
- Max Power Dissipation330mW
- Current Rating-200mA
- Base Part NumberFMMTA92
- Element ConfigurationSingle
- Gain Bandwidth Product50MHz
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)500mV
- Max Collector Current200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 30mA 10V
- Current - Collector Cutoff (Max)250nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
- Collector Emitter Breakdown Voltage300V
- Current - Collector (Ic) (Max)200mA
- Collector Emitter Saturation Voltage-500mV
- Collector Base Voltage (VCBO)-300V
- Emitter Base Voltage (VEBO)-5V
- Continuous Collector Current-200mA
- Height1mm
- Length3.05mm
- Width1.4mm
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
FMMTA92TC Overview
In this device, the DC current gain is 25 @ 30mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 2mA, 20mA.Maintaining the continuous collector voltage at -200mA is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-200mA).Maximum collector currents can be below 200mA volts.
FMMTA92TC Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
FMMTA92TC Applications
There are a lot of Diodes Incorporated
FMMTA92TC applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 25 @ 30mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 2mA, 20mA.Maintaining the continuous collector voltage at -200mA is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-200mA).Maximum collector currents can be below 200mA volts.
FMMTA92TC Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
FMMTA92TC Applications
There are a lot of Diodes Incorporated
FMMTA92TC applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FMMTA92TC More Descriptions
Bipolar Transistors - BJT PNP High Voltage
TRANS PNP 300V 0.2A SOT23-3
TRANS PNP 300V 0.2A SOT23-3
The three parts on the right have similar specifications to FMMTA92TC.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Voltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberElement ConfigurationGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCurrent - Collector (Ic) (Max)Collector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRoHS StatusLead FreeTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsPolarityFrequency - TransitionTransistor ApplicationPolarity/Channel TypeTransition FrequencyFactory Lead TimeNumber of PinsPbfree CodeSubcategoryPower DissipationMax Breakdown VoltageMax Junction Temperature (Tj)Radiation HardeningView Compare
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FMMTA92TCSurface MountSurface MountTO-236-3, SC-59, SOT-23-37.994566mg-55°C~150°C TJTape & Reel (TR)2017Obsolete1 (Unlimited)-300V330mW-200mAFMMTA92Single50MHzPNP500mV200mA25 @ 30mA 10V250nA ICBO500mV @ 2mA, 20mA300V200mA-500mV-300V-5V-200mA1mm3.05mm1.4mmNo SVHCRoHS CompliantLead Free----------------------------- -
Surface MountSurface MountTO-236-3, SC-59, SOT-23-37.994566mg-55°C~150°C TJTape & Reel (TR)-Obsolete1 (Unlimited)100V625mW900mAFMMT634Single-NPN - Darlington960mV900mA20000 @ 100mA 5V100nA960mV @ 5mA, 1A100V--120V12V900mA1mm3.05mm1.4mm-RoHS CompliantLead FreeSILICONe33EAR99MATTE TIN8541.21.00.95DUALGULL WING260unknown403R-PDSO-G3Not Qualified1NPN140MHz-----------
-
Surface MountSurface MountTO-236-3, SC-59, SOT-23-37.994566mg-55°C~150°C TJTape & Reel (TR)-Obsolete1 (Unlimited)150V625mW1AFMMT625Single135MHzNPN300mV1A300 @ 200mA 10V100nA300mV @ 50mA, 1A150V--150V5V1A1mm3.05mm1.4mmNo SVHCRoHS CompliantLead FreeSILICONe33EAR99Matte Tin (Sn) - annealed-DUALGULL WING260-40-R-PDSO-G3Not Qualified1--SWITCHINGNPN135MHz--------
-
Surface MountSurface MountTO-236-3, SC-59, SOT-23-37.994566mg-55°C~150°C TJCut Tape (CT)2006Active1 (Unlimited)100V625mW900mAFMMT634Single-NPN - Darlington100V900mA20000 @ 100mA 5V100nA960mV @ 5mA, 1A115V-850mV120V12V900mA1.1mm3.05mm1.4mmNo SVHCROHS3 CompliantLead FreeSILICONe33EAR99Matte Tin (Sn) - annealed-DUALGULL WING260-403--1NPN140MHz---15 Weeks3yesOther Transistors625mW100V150°CNo
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