Diodes Incorporated FMMTA92TA
- Part Number:
- FMMTA92TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2464650-FMMTA92TA
- Description:
- TRANS PNP 300V 0.2A SOT23-3
- Datasheet:
- FMMTA92TA
Diodes Incorporated FMMTA92TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FMMTA92TA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- Voltage - Rated DC-300V
- Max Power Dissipation330mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-200mA
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFMMTA92
- Reference StandardCECC50002-245
- Number of Elements1
- Voltage300V
- Element ConfigurationSingle
- Current200mA
- Power Dissipation330mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product50MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 30mA 10V
- Current - Collector Cutoff (Max)250nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
- Collector Emitter Breakdown Voltage300V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage-500mV
- Max Breakdown Voltage300V
- Collector Base Voltage (VCBO)300V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current-200mA
- Height1mm
- Length3.05mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FMMTA92TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 25 @ 30mA 10V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -200mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -200mA.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 200mA volts at its maximum.
FMMTA92TA Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -200mA
a transition frequency of 50MHz
FMMTA92TA Applications
There are a lot of Diodes Incorporated
FMMTA92TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 25 @ 30mA 10V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -200mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -200mA.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 200mA volts at its maximum.
FMMTA92TA Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -200mA
a transition frequency of 50MHz
FMMTA92TA Applications
There are a lot of Diodes Incorporated
FMMTA92TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FMMTA92TA More Descriptions
Single Bipolar Transistor, PNP, 300 V, 200 mA, 350 mW, SOT-23, 3 Pins, Surface Mount
FMMTA92 Series PNP 0.2 A 300 V SMT Silicon High Voltage Transistor - SOT-23
Small Signal Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 300V 0.2A 350mW 3-Pin SOT-23 T/R
Transistor, PNP,200mA,300V, SOT23 | Diodes Inc FMMTA92TA
PNP TRANSISTOR 300V 0,2A SOT23
FMMTA92 Series PNP 0.2 A 300 V SMT Silicon High Voltage Transistor - SOT-23
Small Signal Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 300V 0.2A 350mW 3-Pin SOT-23 T/R
Transistor, PNP,200mA,300V, SOT23 | Diodes Inc FMMTA92TA
PNP TRANSISTOR 300V 0,2A SOT23
The three parts on the right have similar specifications to FMMTA92TA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberReference StandardNumber of ElementsVoltageElement ConfigurationCurrentPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSubcategoryPin CountCurrent - Collector (Ic) (Max)PolarityFrequency - TransitionMax Junction Temperature (Tj)View Compare
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FMMTA92TA15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed-300V330mWDUALGULL WING260-200mA50MHz40FMMTA92CECC50002-2451300VSingle200mA330mWSWITCHING50MHzPNPPNP300V200mA25 @ 30mA 10V250nA ICBO500mV @ 2mA, 20mA300V50MHz-500mV300V300V5V-200mA1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead Free-------
-
-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mg--55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)--Matte Tin (Sn) - annealed-12V625mW----2.5A--FMMT717---Single---110MHzPNPPNP220mV2.5A300 @ 100mA 2V100nA220mV @ 50mA, 2.5A12V80MHz-180mV--12V5V-2.5A1mm3.05mm1.4mmNo SVHC-RoHS CompliantLead FreeOther Transistors32.5A---
-
15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed100V625mWDUALGULL WING260900mA-40FMMT634-1-Single-625mW---NPN - Darlington100V900mA20000 @ 100mA 5V100nA960mV @ 5mA, 1A115V-850mV100V120V12V900mA1.1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead FreeOther Transistors3-NPN140MHz150°C
-
15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed100V330mWDUALGULL WING260500mA40MHz40FMMT415-1-Single-330mWSWITCHING40MHz-NPN - Avalanche Mode100V500mA25 @ 10mA 10V100nA ICBO500mV @ 1mA, 10mA100V40MHz500mV100V320V6V500mA1.1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead Free---NPN--
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