Diodes Incorporated FMMTA42TA
- Part Number:
- FMMTA42TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2845128-FMMTA42TA
- Description:
- TRANS NPN 300V 0.2A SOT23-3
- Datasheet:
- FMMTA42TA
Diodes Incorporated FMMTA42TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FMMTA42TA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- SubcategoryOther Transistors
- Voltage - Rated DC300V
- Max Power Dissipation330mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating200mA
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFMMTA42
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation330mW
- Gain Bandwidth Product50MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 30mA 10V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
- Collector Emitter Breakdown Voltage300V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage300V
- Collector Base Voltage (VCBO)300V
- Emitter Base Voltage (VEBO)5V
- hFE Min25
- Continuous Collector Current200mA
- Height1mm
- Length3.05mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FMMTA42TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 30mA 10V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 200mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 200mA.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 200mA volts at its maximum.
FMMTA42TA Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
a transition frequency of 50MHz
FMMTA42TA Applications
There are a lot of Diodes Incorporated
FMMTA42TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 30mA 10V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 200mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 200mA.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 200mA volts at its maximum.
FMMTA42TA Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
a transition frequency of 50MHz
FMMTA42TA Applications
There are a lot of Diodes Incorporated
FMMTA42TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FMMTA42TA More Descriptions
FMMTA42 Series NPN 0.2 A 300 V SMT Silicon High Voltage Transistor - SOT-23
Transistor: NPN; bipolar; 300V; 200mA; 330mW; SOT23
Small Signal Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 300V 0.2A Automotive 3-Pin SOT-23
NPN Transistor,200mA,300V, SOT23 | Diodes Inc FMMTA42TA
Transistor: NPN; bipolar; 300V; 200mA; 330mW; SOT23
Small Signal Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 300V 0.2A Automotive 3-Pin SOT-23
NPN Transistor,200mA,300V, SOT23 | Diodes Inc FMMTA42TA
The three parts on the right have similar specifications to FMMTA42TA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeHTS CodeReach Compliance CodeReference StandardQualification StatusPolarityTransistor ApplicationJESD-30 CodeConfigurationPower - MaxFrequency - TransitionVCEsat-MaxTurn Off Time-Max (toff)Turn On Time-Max (ton)Collector-Base Capacitance-MaxView Compare
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FMMTA42TA15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)2007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealedOther Transistors300V330mWDUALGULL WING260200mA50MHz40FMMTA4231Single330mW50MHzNPNNPN300V200mA40 @ 30mA 10V100nA ICBO500mV @ 2mA, 20mA300V50MHz500mV300V300V5V25200mA1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead Free---------------
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-Surface MountSurface MountTO-236-3, SC-59, SOT-23-33-SILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR99MATTE TIN-30V330mWDUALGULL WING260300mA-40FMMTA1331Single330mW--NPN - Darlington900mV300mA10000 @ 100mA 5V100nA900mV @ 100μA, 100mA40V100MHz--40V10V-300mA---No SVHC-RoHS CompliantLead Free8541.21.00.95unknownCECCNot QualifiedNPNSWITCHING--------
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13 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)2014e3-Active1 (Unlimited)3EAR99Matte Tin (Sn)--625mWDUALGULL WING------1---PNPPNP330mV1A250 @ 500mA 10V100nA330mV @ 150mA, 1A100V200MHz-----------ROHS3 Compliant---AEC-Q101--SWITCHINGR-PDSO-G3SINGLE625mW200MHz0.33 V760ns50ns20pF
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15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed-100V330mWDUALGULL WING260500mA40MHz40FMMT415-1Single330mW40MHz-NPN - Avalanche Mode100V500mA25 @ 10mA 10V100nA ICBO500mV @ 1mA, 10mA100V40MHz500mV100V320V6V-500mA1.1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead Free----NPNSWITCHING--------
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