Diodes Incorporated FMMT720TA
- Part Number:
- FMMT720TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2465252-FMMT720TA
- Description:
- TRANS PNP 40V 1.5A SOT23-3
- Datasheet:
- FMMT720TA
Diodes Incorporated FMMT720TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FMMT720TA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- SubcategoryOther Transistors
- Voltage - Rated DC-40V
- Max Power Dissipation625mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-1.5A
- Frequency190MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFMMT720
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation625mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product190MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 100mA 2V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic330mV @ 100mA, 1.5A
- Collector Emitter Breakdown Voltage40V
- Transition Frequency190MHz
- Collector Emitter Saturation Voltage-245mV
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current-1.5A
- Height1mm
- Length3.05mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FMMT720TA Overview
In this device, the DC current gain is 300 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -245mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 330mV @ 100mA, 1.5A.Maintaining the continuous collector voltage at -1.5A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1.5A).190MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 1.5A volts.
FMMT720TA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of -245mV
the vce saturation(Max) is 330mV @ 100mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -1.5A
a transition frequency of 190MHz
FMMT720TA Applications
There are a lot of Diodes Incorporated
FMMT720TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 300 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -245mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 330mV @ 100mA, 1.5A.Maintaining the continuous collector voltage at -1.5A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1.5A).190MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 1.5A volts.
FMMT720TA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of -245mV
the vce saturation(Max) is 330mV @ 100mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -1.5A
a transition frequency of 190MHz
FMMT720TA Applications
There are a lot of Diodes Incorporated
FMMT720TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FMMT720TA More Descriptions
Trans GP BJT PNP 40V 1.5A 3-Pin SOT-23 T/R Trans GP BJT PNP 40V 1.5A 3-Pin SOT-23 T/R
FMMT720 Series PNP 1.5 A 40 V Surface Mount Silicon Power Transistor - SOT-23-3
Small Signal Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
Transistor PNP FMMT720/FMMT720TA ZETEX RoHS Ampere=1.5 V=40 SOt23
PNP transistor, FMMT720 1.5A | Diodes Inc FMMT720TA
TRANSISTOR, PNP, REEL 3K; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 190MHz; Power Dissipation Pd: 625mW; DC Collector Current: 1.5A; DC Current Gain hFE: 480hFE; Transistor Cas
TRANSISTOR, PNP, REEL 3K; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:625mW; DC Collector Current:1.5A; DC Current Gain hFE:480; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:330mV; Continuous Collector Current Ic Max:1.5A; Current Ic Continuous a Max:1.5A; Current Ic hFE:100mA; Device Marking:MT720; Gain Bandwidth ft Min:150MHz; Gain Bandwidth ft Typ:190MHz; Hfe Min:300; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Reel Quantity:3000; SMD Marking:720; Tape Width:8mm; Termination Type:SMD; Turn Off Time:435ns; Turn On Time:40ns; Voltage Vcbo:40V
FMMT720 Series PNP 1.5 A 40 V Surface Mount Silicon Power Transistor - SOT-23-3
Small Signal Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
Transistor PNP FMMT720/FMMT720TA ZETEX RoHS Ampere=1.5 V=40 SOt23
PNP transistor, FMMT720 1.5A | Diodes Inc FMMT720TA
TRANSISTOR, PNP, REEL 3K; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 190MHz; Power Dissipation Pd: 625mW; DC Collector Current: 1.5A; DC Current Gain hFE: 480hFE; Transistor Cas
TRANSISTOR, PNP, REEL 3K; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:625mW; DC Collector Current:1.5A; DC Current Gain hFE:480; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:330mV; Continuous Collector Current Ic Max:1.5A; Current Ic Continuous a Max:1.5A; Current Ic hFE:100mA; Device Marking:MT720; Gain Bandwidth ft Min:150MHz; Gain Bandwidth ft Typ:190MHz; Hfe Min:300; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Reel Quantity:3000; SMD Marking:720; Tape Width:8mm; Termination Type:SMD; Turn Off Time:435ns; Turn On Time:40ns; Voltage Vcbo:40V
The three parts on the right have similar specifications to FMMT720TA.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeJESD-30 CodeQualification StatusPolarityFrequency - TransitionMax Junction Temperature (Tj)View Compare
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FMMT720TA15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealedOther Transistors-40V625mWDUALGULL WING260-1.5A190MHz40FMMT72031Single625mWSWITCHING190MHzPNPPNP40V1.5A300 @ 100mA 2V100nA330mV @ 100mA, 1.5A40V190MHz-245mV40V40V5V-1.5A1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead Free------
-
-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR99Matte Tin (Sn) - annealed-150V625mWDUALGULL WING2601A-40FMMT625-1Single-SWITCHING135MHzNPNNPN300mV1A300 @ 200mA 10V100nA300mV @ 50mA, 1A150V135MHz--150V5V1A1mm3.05mm1.4mmNo SVHC-RoHS CompliantLead FreeR-PDSO-G3Not Qualified---
-
-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mg--55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)----60V500mW---1A--FMMT451--Single--150MHz-NPN350mV1A50 @ 150mA 10V100nA ICBO350mV @ 15mA, 150mA60V-350mV-80V5V1A1.1mm3mm1.4mmNo SVHC-RoHS CompliantLead Free-----
-
15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealedOther Transistors100V625mWDUALGULL WING260900mA-40FMMT63431Single625mW---NPN - Darlington100V900mA20000 @ 100mA 5V100nA960mV @ 5mA, 1A115V-850mV100V120V12V900mA1.1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead Free--NPN140MHz150°C
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