Diodes Incorporated FMMT624TA
- Part Number:
- FMMT624TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2462899-FMMT624TA
- Description:
- TRANS NPN 125V 1A SOT23-3
- Datasheet:
- FMMT624TA
Diodes Incorporated FMMT624TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FMMT624TA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2010
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- SubcategoryOther Transistors
- Voltage - Rated DC125V
- Max Power Dissipation625mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating1A
- Frequency155MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFMMT624
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation625mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product155MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)125V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 200mA 10V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 50mA, 1A
- Collector Emitter Breakdown Voltage125V
- Transition Frequency155MHz
- Collector Emitter Saturation Voltage165mV
- Max Breakdown Voltage125V
- Collector Base Voltage (VCBO)125V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current1A
- Height1mm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FMMT624TA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 300 @ 200mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 165mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 50mA, 1A.Single BJT transistor is recommended to keep the continuous collector voltage at 1A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 155MHz.The breakdown input voltage is 125V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
FMMT624TA Features
the DC current gain for this device is 300 @ 200mA 10V
a collector emitter saturation voltage of 165mV
the vce saturation(Max) is 250mV @ 50mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 155MHz
FMMT624TA Applications
There are a lot of Diodes Incorporated
FMMT624TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 300 @ 200mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 165mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 50mA, 1A.Single BJT transistor is recommended to keep the continuous collector voltage at 1A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 155MHz.The breakdown input voltage is 125V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
FMMT624TA Features
the DC current gain for this device is 300 @ 200mA 10V
a collector emitter saturation voltage of 165mV
the vce saturation(Max) is 250mV @ 50mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 155MHz
FMMT624TA Applications
There are a lot of Diodes Incorporated
FMMT624TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FMMT624TA More Descriptions
Trans Gp Bjt NPN 125V 1A 3-PIN SOT-23 T/r Trans Gp Bjt NPN 125V 1A 3-PIN SOT-23 T/r
FMMT624 Series NPN 1 A 125 V Surface Mount Silicon Power Transistor - SOT-23
Small Signal Bipolar Transistor, 1A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon
Transistor, NPN,1A,125V, SOT23 | Diodes Inc FMMT624TA
TRANSISTOR,NPN,125V,1A,SOT23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency Typ ft:155MHz; Power Dissipation Pd:625mW; DC Collector Current:1A; DC Current Gain hFE:450; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; Gain Bandwidth ft Typ:155MHz
FMMT624 Series NPN 1 A 125 V Surface Mount Silicon Power Transistor - SOT-23
Small Signal Bipolar Transistor, 1A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon
Transistor, NPN,1A,125V, SOT23 | Diodes Inc FMMT624TA
TRANSISTOR,NPN,125V,1A,SOT23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency Typ ft:155MHz; Power Dissipation Pd:625mW; DC Collector Current:1A; DC Current Gain hFE:450; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; Gain Bandwidth ft Typ:155MHz
The three parts on the right have similar specifications to FMMT624TA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeHTS CodeReach Compliance CodeJESD-30 CodeQualification StatusPolarityFrequency - TransitionView Compare
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FMMT624TA15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2010e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealedOther Transistors125V625mWDUALGULL WING2601A155MHz40FMMT62431Single625mWSWITCHING155MHzNPNNPN125V1A300 @ 200mA 10V100nA250mV @ 50mA, 1A125V155MHz165mV125V125V5V1A1mm2.9mm1.3mmNo SVHCNoROHS3 CompliantLead Free-------
-
-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR99MATTE TIN-100V625mWDUALGULL WING260900mA-40FMMT63431Single----NPN - Darlington960mV900mA20000 @ 100mA 5V100nA960mV @ 5mA, 1A100V---120V12V900mA1mm3.05mm1.4mm--RoHS CompliantLead Free8541.21.00.95unknownR-PDSO-G3Not QualifiedNPN140MHz
-
-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mg--55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)----60V500mW---1A--FMMT451--Single--150MHz-NPN350mV1A50 @ 150mA 10V100nA ICBO350mV @ 15mA, 150mA60V-350mV-80V5V1A1.1mm3mm1.4mmNo SVHC-RoHS CompliantLead Free------
-
15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed-100V330mWDUALGULL WING260500mA40MHz40FMMT415-1Single330mWSWITCHING40MHz-NPN - Avalanche Mode100V500mA25 @ 10mA 10V100nA ICBO500mV @ 1mA, 10mA100V40MHz500mV100V320V6V500mA1.1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead Free----NPN-
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