Diodes Incorporated FMMT617TA
- Part Number:
- FMMT617TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2845129-FMMT617TA
- Description:
- TRANS NPN 15V 3A SOT23-3
- Datasheet:
- FMMT617TA
Diodes Incorporated FMMT617TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FMMT617TA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published1997
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- Voltage - Rated DC15V
- Max Power Dissipation625mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating3A
- Frequency120MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFMMT617
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation625mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product120MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)15V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 200mA 2V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic200mV @ 50mA, 3A
- Collector Emitter Breakdown Voltage15V
- Transition Frequency120MHz
- Collector Emitter Saturation Voltage200mV
- Max Breakdown Voltage15V
- Collector Base Voltage (VCBO)15V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current3A
- Height1.1mm
- Length3mm
- Width1.4mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FMMT617TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 200mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 200mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 50mA, 3A.Continuous collector voltages of 3A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 120MHz.Single BJT transistor can take a breakdown input voltage of 15V volts.During maximum operation, collector current can be as low as 3A volts.
FMMT617TA Features
the DC current gain for this device is 300 @ 200mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 50mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 120MHz
FMMT617TA Applications
There are a lot of Diodes Incorporated
FMMT617TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 200mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 200mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 50mA, 3A.Continuous collector voltages of 3A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 120MHz.Single BJT transistor can take a breakdown input voltage of 15V volts.During maximum operation, collector current can be as low as 3A volts.
FMMT617TA Features
the DC current gain for this device is 300 @ 200mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 50mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 120MHz
FMMT617TA Applications
There are a lot of Diodes Incorporated
FMMT617TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FMMT617TA More Descriptions
15V 625mW 300@200mA,2V 3A NPN SOT-23 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 15V 3A 625mW Automotive 3-Pin SOT-23 T/R
FMMT617 Series NPN 3 A 15 V SMT Silicon Power Transistor - SOT-23
Small Signal Bipolar Transistor, 3A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon
SMT NPN transistor, FMMT617 3A Ic 2Vce | Diodes Inc FMMT617TA
Trans GP BJT NPN 15V 3A 625mW Automotive 3-Pin SOT-23 T/R
FMMT617 Series NPN 3 A 15 V SMT Silicon Power Transistor - SOT-23
Small Signal Bipolar Transistor, 3A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon
SMT NPN transistor, FMMT617 3A Ic 2Vce | Diodes Inc FMMT617TA
The three parts on the right have similar specifications to FMMT617TA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSubcategoryPin CountCurrent - Collector (Ic) (Max)REACH SVHCHTS CodeReach Compliance CodeReference StandardJESD-30 CodeQualification StatusPolarityFrequency - TransitionMax Junction Temperature (Tj)View Compare
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FMMT617TA15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)1997e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed15V625mWDUALGULL WING2603A120MHz40FMMT6171Single625mWSWITCHING120MHzNPNNPN15V3A300 @ 200mA 2V100nA200mV @ 50mA, 3A15V120MHz200mV15V15V5V3A1.1mm3mm1.4mmNoROHS3 CompliantLead Free-------------
-
-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mg--55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)--Matte Tin (Sn) - annealed-12V625mW----2.5A--FMMT717-Single--110MHzPNPPNP220mV2.5A300 @ 100mA 2V100nA220mV @ 50mA, 2.5A12V80MHz-180mV--12V5V-2.5A1mm3.05mm1.4mm-RoHS CompliantLead FreeOther Transistors32.5ANo SVHC--------
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-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR99MATTE TIN80V330mWDUALGULL WING260500mA-40FMMTA061Single--100MHzNPNNPN250mV500mA50 @ 10mA 1V100nA250mV @ 10mA, 100mA80V100MHz250mV-80V4V500mA1mm3.05mm1.4mm-RoHS CompliantLead Free-3-No SVHC8541.21.00.95unknownCECC50002-240R-PDSO-G3Not Qualified---
-
15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed100V625mWDUALGULL WING260900mA-40FMMT6341Single625mW---NPN - Darlington100V900mA20000 @ 100mA 5V100nA960mV @ 5mA, 1A115V-850mV100V120V12V900mA1.1mm3.05mm1.4mmNoROHS3 CompliantLead FreeOther Transistors3-No SVHC-----NPN140MHz150°C
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