Diodes Incorporated FMMT597TC
- Part Number:
- FMMT597TC
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2468585-FMMT597TC
- Description:
- TRANS PNP 300V 0.2A SOT23-3
- Datasheet:
- FMMT597TC
Diodes Incorporated FMMT597TC technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FMMT597TC.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Weight7.994566mg
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2012
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Voltage - Rated DC-300V
- Max Power Dissipation500mW
- Current Rating-200mA
- Base Part NumberFMMT597
- Element ConfigurationSingle
- Gain Bandwidth Product75MHz
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)250mV
- Max Collector Current200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 50mA 10V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 20mA, 100mA
- Collector Emitter Breakdown Voltage300V
- Current - Collector (Ic) (Max)200mA
- Collector Base Voltage (VCBO)-300V
- Emitter Base Voltage (VEBO)-5V
- Continuous Collector Current-200mA
- Height1.1mm
- Length3mm
- Width1.4mm
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
FMMT597TC Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 50mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 20mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at -200mA in order to achieve high efficiency.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -200mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
FMMT597TC Features
the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 250mV @ 20mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
FMMT597TC Applications
There are a lot of Diodes Incorporated
FMMT597TC applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 50mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 20mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at -200mA in order to achieve high efficiency.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -200mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
FMMT597TC Features
the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 250mV @ 20mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
FMMT597TC Applications
There are a lot of Diodes Incorporated
FMMT597TC applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FMMT597TC More Descriptions
TRANS PNP 300V 0.2A SOT23-3
The three parts on the right have similar specifications to FMMT597TC.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseWeightOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Voltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberElement ConfigurationGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCurrent - Collector (Ic) (Max)Collector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRoHS StatusLead FreeJESD-609 CodeTerminal FinishSubcategoryPin CountPolarity/Channel TypeTransition FrequencyCollector Emitter Saturation VoltageTransistor Element MaterialNumber of TerminationsECCN CodeHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Reference StandardJESD-30 CodeQualification StatusNumber of ElementsFactory Lead TimeNumber of PinsPbfree CodePolarityPower DissipationMax Breakdown VoltageFrequency - TransitionMax Junction Temperature (Tj)Radiation HardeningView Compare
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FMMT597TCSurface MountSurface MountTO-236-3, SC-59, SOT-23-37.994566mg-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012012Obsolete1 (Unlimited)-300V500mW-200mAFMMT597Single75MHzPNP250mV200mA100 @ 50mA 10V100nA250mV @ 20mA, 100mA300V200mA-300V-5V-200mA1.1mm3mm1.4mmNo SVHCRoHS CompliantLead Free------------------------------
-
Surface MountSurface MountTO-236-3, SC-59, SOT-23-37.994566mg-55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)-12V625mW-2.5AFMMT717Single110MHzPNP220mV2.5A300 @ 100mA 2V100nA220mV @ 50mA, 2.5A12V2.5A-12V5V-2.5A1mm3.05mm1.4mmNo SVHCRoHS CompliantLead Freee3Matte Tin (Sn) - annealedOther Transistors3PNP80MHz-180mV----------------------
-
Surface MountSurface MountTO-236-3, SC-59, SOT-23-37.994566mg-55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)80V330mW500mAFMMTA06Single100MHzNPN250mV500mA50 @ 10mA 1V100nA250mV @ 10mA, 100mA80V-80V4V500mA1mm3.05mm1.4mmNo SVHCRoHS CompliantLead Freee3MATTE TIN-3NPN100MHz250mVSILICON3EAR998541.21.00.95DUALGULL WING260unknown40CECC50002-240R-PDSO-G3Not Qualified1---------
-
Surface MountSurface MountTO-236-3, SC-59, SOT-23-37.994566mg-55°C~150°C TJCut Tape (CT)-2006Active1 (Unlimited)100V625mW900mAFMMT634Single-NPN - Darlington100V900mA20000 @ 100mA 5V100nA960mV @ 5mA, 1A115V-120V12V900mA1.1mm3.05mm1.4mmNo SVHCROHS3 CompliantLead Freee3Matte Tin (Sn) - annealedOther Transistors3--850mVSILICON3EAR99-DUALGULL WING260-40---115 Weeks3yesNPN625mW100V140MHz150°CNo
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