Diodes Incorporated FMMT597TA
- Part Number:
- FMMT597TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3068785-FMMT597TA
- Description:
- TRANS PNP 300V 0.2A SOT23-3
- Datasheet:
- FMMT597TA
Diodes Incorporated FMMT597TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FMMT597TA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- SeriesAutomotive, AEC-Q101
- Published2000
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- SubcategoryOther Transistors
- Voltage - Rated DC-300V
- Max Power Dissipation500mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-200mA
- Frequency75MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFMMT597
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation500mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product75MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 50mA 10V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 20mA, 100mA
- Collector Emitter Breakdown Voltage300V
- Transition Frequency75MHz
- Collector Emitter Saturation Voltage-250mV
- Max Breakdown Voltage300V
- Collector Base Voltage (VCBO)300V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current-200mA
- Height1.1mm
- Length3mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FMMT597TA Overview
This device has a DC current gain of 100 @ 50mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.A VCE saturation (Max) of 250mV @ 20mA, 100mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -200mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -200mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 75MHz.A breakdown input voltage of 300V volts can be used.A maximum collector current of 200mA volts is possible.
FMMT597TA Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 20mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -200mA
a transition frequency of 75MHz
FMMT597TA Applications
There are a lot of Diodes Incorporated
FMMT597TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 50mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.A VCE saturation (Max) of 250mV @ 20mA, 100mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -200mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -200mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 75MHz.A breakdown input voltage of 300V volts can be used.A maximum collector current of 200mA volts is possible.
FMMT597TA Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 20mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -200mA
a transition frequency of 75MHz
FMMT597TA Applications
There are a lot of Diodes Incorporated
FMMT597TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FMMT597TA More Descriptions
FMMT597 Series PNP 0.2 A 300 V SMT Silicon High Voltage Transistor - SOT-23
Small Signal Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 300V 0.2A 500mW Automotive 3-Pin SOT-23 T/R
Transistor, PNP,0.2A,300V, SOT23 | Diodes Inc FMMT597TA
TRANSISTOR, PNP, -300V, -0.2A, SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -300V; Transition Frequency ft: 75MHz; Power Dissipation Pd: 500mW; DC Collector Current: -200mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Small Signal Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 300V 0.2A 500mW Automotive 3-Pin SOT-23 T/R
Transistor, PNP,0.2A,300V, SOT23 | Diodes Inc FMMT597TA
TRANSISTOR, PNP, -300V, -0.2A, SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -300V; Transition Frequency ft: 75MHz; Power Dissipation Pd: 500mW; DC Collector Current: -200mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
The three parts on the right have similar specifications to FMMT597TA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeHTS CodeReach Compliance CodePin CountReference StandardQualification StatusPolarityFrequency - TransitionMax Junction Temperature (Tj)View Compare
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FMMT597TA15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)Automotive, AEC-Q1012000e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealedOther Transistors-300V500mWDUALGULL WING260-200mA75MHz40FMMT5971Single500mWSWITCHING75MHzPNPPNP300V200mA100 @ 50mA 10V100nA250mV @ 20mA, 100mA300V75MHz-250mV300V300V5V-200mA1.1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead Free---------
-
-Surface MountSurface MountTO-236-3, SC-59, SOT-23-33-SILICON-55°C~150°C TJTape & Reel (TR)--e3-Obsolete1 (Unlimited)3EAR99MATTE TIN-30V330mWDUALGULL WING260300mA-40FMMTA131Single330mWSWITCHING--NPN - Darlington900mV300mA10000 @ 100mA 5V100nA900mV @ 100μA, 100mA40V100MHz--40V10V300mA---No SVHC-RoHS CompliantLead Free8541.21.00.95unknown3CECCNot QualifiedNPN--
-
15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)-2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealedOther Transistors100V625mWDUALGULL WING260900mA-40FMMT6341Single625mW---NPN - Darlington100V900mA20000 @ 100mA 5V100nA960mV @ 5mA, 1A115V-850mV100V120V12V900mA1.1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead Free--3--NPN140MHz150°C
-
15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)-2012e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed-100V330mWDUALGULL WING260500mA40MHz40FMMT4151Single330mWSWITCHING40MHz-NPN - Avalanche Mode100V500mA25 @ 10mA 10V100nA ICBO500mV @ 1mA, 10mA100V40MHz500mV100V320V6V500mA1.1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead Free-----NPN--
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