Diodes Incorporated FMMT591TA
- Part Number:
- FMMT591TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2462872-FMMT591TA
- Description:
- TRANS PNP 60V 1A SOT23-3
- Datasheet:
- FMMT591TA
Diodes Incorporated FMMT591TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FMMT591TA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2012
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- SubcategoryOther Transistors
- Voltage - Rated DC-60V
- Max Power Dissipation500mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-1A
- Frequency150MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFMMT591
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation500mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product150MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 500mA 5V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic350mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency150MHz
- Collector Emitter Saturation Voltage-295mV
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current-1A
- Height1.02mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FMMT591TA Overview
In this device, the DC current gain is 100 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -295mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 100mA, 1A.Maintaining the continuous collector voltage at -1A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).150MHz is present in the transition frequency.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
FMMT591TA Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -295mV
the vce saturation(Max) is 350mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 150MHz
FMMT591TA Applications
There are a lot of Diodes Incorporated
FMMT591TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 100 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -295mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 100mA, 1A.Maintaining the continuous collector voltage at -1A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).150MHz is present in the transition frequency.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
FMMT591TA Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -295mV
the vce saturation(Max) is 350mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 150MHz
FMMT591TA Applications
There are a lot of Diodes Incorporated
FMMT591TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FMMT591TA More Descriptions
60V 500mW 100@500mA,5V 1A PNP SOT-23 Bipolar Transistors - BJT ROHS
Trans GP BJT PNP 60V 1A 500mW 3-Pin SOT-23 T/R / TRANS PNP 60V 1A SOT23-3
FMMT591 Series PNP 1 A 60 V SMT Silicon Medium Power Transistor - SOT-23-3
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
TRANSISTOR, PNP, REEL 3K; Transistor Type:Bipolar; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:60V; Current Ic Continuous a Max:1A; Voltage, Vce Sat Max:180mV; Power Dissipation:500mW; Min Hfe:100; ft, Typ:150MHz; Case Style:SOT-23; Termination Type:SMD; Operating Temperature Range:-55°C to 150°C; Current Ic Max:1A; Current Ic hFE:500mA; Device Marking:MT591; No. of Pins:3; Power, Ptot:0.5W; Quantity, Reel:3000; SMD Marking:591; Transistors, No. of:1; Voltage, Vcbo:80V; Width, Tape:8mm; ft, Min:150MHz
Trans GP BJT PNP 60V 1A 500mW 3-Pin SOT-23 T/R / TRANS PNP 60V 1A SOT23-3
FMMT591 Series PNP 1 A 60 V SMT Silicon Medium Power Transistor - SOT-23-3
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
TRANSISTOR, PNP, REEL 3K; Transistor Type:Bipolar; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:60V; Current Ic Continuous a Max:1A; Voltage, Vce Sat Max:180mV; Power Dissipation:500mW; Min Hfe:100; ft, Typ:150MHz; Case Style:SOT-23; Termination Type:SMD; Operating Temperature Range:-55°C to 150°C; Current Ic Max:1A; Current Ic hFE:500mA; Device Marking:MT591; No. of Pins:3; Power, Ptot:0.5W; Quantity, Reel:3000; SMD Marking:591; Transistors, No. of:1; Voltage, Vcbo:80V; Width, Tape:8mm; ft, Min:150MHz
The three parts on the right have similar specifications to FMMT591TA.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeHTS CodeReach Compliance CodeReference StandardQualification StatusPolarityJESD-30 CodeConfigurationPower - MaxFrequency - TransitionVCEsat-MaxTurn Off Time-Max (toff)Turn On Time-Max (ton)Collector-Base Capacitance-MaxMax Junction Temperature (Tj)View Compare
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FMMT591TA15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)2012e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealedOther Transistors-60V500mWDUALGULL WING260-1A150MHz40FMMT59131Single500mWSWITCHING150MHzPNPPNP40V1A100 @ 500mA 5V100nA350mV @ 100mA, 1A60V150MHz-295mV60V40V5V-1A1.02mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free---------------
-
-Surface MountSurface MountTO-236-3, SC-59, SOT-23-33-SILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR99MATTE TIN-30V330mWDUALGULL WING260300mA-40FMMTA1331Single330mWSWITCHING--NPN - Darlington900mV300mA10000 @ 100mA 5V100nA900mV @ 100μA, 100mA40V100MHz--40V10V300mA---No SVHC-RoHS CompliantLead Free8541.21.00.95unknownCECCNot QualifiedNPN---------
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13 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)2014e3-Active1 (Unlimited)3EAR99Matte Tin (Sn)--625mWDUALGULL WING------1--SWITCHING-PNPPNP330mV1A250 @ 500mA 10V100nA330mV @ 150mA, 1A100V200MHz----------ROHS3 Compliant---AEC-Q101--R-PDSO-G3SINGLE625mW200MHz0.33 V760ns50ns20pF-
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15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealedOther Transistors100V625mWDUALGULL WING260900mA-40FMMT63431Single625mW---NPN - Darlington100V900mA20000 @ 100mA 5V100nA960mV @ 5mA, 1A115V-850mV100V120V12V900mA1.1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead Free----NPN---140MHz----150°C
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