Diodes Incorporated FMMT591ATC
- Part Number:
- FMMT591ATC
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2467007-FMMT591ATC
- Description:
- TRANS PNP 40V 1A SOT23-3
- Datasheet:
- FMMT591ATC
Diodes Incorporated FMMT591ATC technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FMMT591ATC.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published1997
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- Voltage - Rated DC-40V
- Max Power Dissipation500mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-1A
- Frequency150MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFMMT591A
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation500mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product150MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage40V
- Transition Frequency150MHz
- Collector Emitter Saturation Voltage-500mV
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current-1A
- Height1mm
- Length3.05mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FMMT591ATC Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 100mA 5V DC current gain.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -1A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 150MHz in the part.When collector current reaches its maximum, it can reach 1A volts.
FMMT591ATC Features
the DC current gain for this device is 300 @ 100mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 150MHz
FMMT591ATC Applications
There are a lot of Diodes Incorporated
FMMT591ATC applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 100mA 5V DC current gain.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -1A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 150MHz in the part.When collector current reaches its maximum, it can reach 1A volts.
FMMT591ATC Features
the DC current gain for this device is 300 @ 100mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 150MHz
FMMT591ATC Applications
There are a lot of Diodes Incorporated
FMMT591ATC applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FMMT591ATC More Descriptions
FMMT591A 40 V 1 A PNP Medium Power High Performance Transistor - SOT-23-3
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 40V 1A 500mW 3-Pin SOT-23 T/R
Trans, Pnp, 40V, 1A, 150Deg C, 0.5W Rohs Compliant: Yes |Diodes Inc. FMMT591ATC
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 40V 1A 500mW 3-Pin SOT-23 T/R
Trans, Pnp, 40V, 1A, 150Deg C, 0.5W Rohs Compliant: Yes |Diodes Inc. FMMT591ATC
The three parts on the right have similar specifications to FMMT591ATC.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeHTS CodeReach Compliance CodeReference StandardJESD-30 CodeQualification StatusSubcategoryPolarityMax Breakdown VoltageFrequency - TransitionMax Junction Temperature (Tj)View Compare
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FMMT591ATC15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)1997e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed-40V500mWDUALGULL WING260-1A150MHz40FMMT591A31Single500mWSWITCHING150MHzPNPPNP40V1A300 @ 100mA 5V100nA500mV @ 100mA, 1A40V150MHz-500mV40V5V-1A1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead Free-----------
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-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR99MATTE TIN80V330mWDUALGULL WING260500mA-40FMMTA0631Single--100MHzNPNNPN250mV500mA50 @ 10mA 1V100nA250mV @ 10mA, 100mA80V100MHz250mV80V4V500mA1mm3.05mm1.4mmNo SVHC-RoHS CompliantLead Free8541.21.00.95unknownCECC50002-240R-PDSO-G3Not Qualified-----
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15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed100V625mWDUALGULL WING260900mA-40FMMT63431Single625mW---NPN - Darlington100V900mA20000 @ 100mA 5V100nA960mV @ 5mA, 1A115V-850mV120V12V900mA1.1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead Free-----Other TransistorsNPN100V140MHz150°C
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15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed100V330mWDUALGULL WING260500mA40MHz40FMMT415-1Single330mWSWITCHING40MHz-NPN - Avalanche Mode100V500mA25 @ 10mA 10V100nA ICBO500mV @ 1mA, 10mA100V40MHz500mV320V6V500mA1.1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead Free------NPN100V--
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