Diodes Incorporated FMMT589TA
- Part Number:
- FMMT589TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3553760-FMMT589TA
- Description:
- TRANS PNP 30V 1A SOT23-3
- Datasheet:
- FMMT589TA
Diodes Incorporated FMMT589TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FMMT589TA.
- Factory Lead Time15 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Voltage - Rated DC-30V
- Max Power Dissipation500mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-1A
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFMMT589
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation500mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 500mA 2V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic650mV @ 200mA, 2A
- Collector Emitter Breakdown Voltage30V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage-650mV
- Max Breakdown Voltage30V
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current-1A
- Height1.1mm
- Length3mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FMMT589TA Overview
DC current gain in this device equals 100 @ 500mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -650mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 200mA, 2A.Single BJT transistor is essential to maintain the continuous collector voltage at -1A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1A current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 1A volts.
FMMT589TA Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 100MHz
FMMT589TA Applications
There are a lot of Diodes Incorporated
FMMT589TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 100 @ 500mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -650mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 200mA, 2A.Single BJT transistor is essential to maintain the continuous collector voltage at -1A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1A current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 1A volts.
FMMT589TA Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 100MHz
FMMT589TA Applications
There are a lot of Diodes Incorporated
FMMT589TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FMMT589TA More Descriptions
FMMT589 Series PNP 1 A 30 V SMT Silicon Medium Power Transistor - SOT-23-3
Small Signal Bipolar Transistor, 0.001A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 30V 1A 500mW 3-Pin SOT-23 T/R
Trans, Pnp, 30V, 1A, 150Deg C, 0.5W Rohs Compliant: Yes |Diodes Inc. FMMT589TA
PNP medium power TX SOT23, FMMT589TA | Diodes Inc FMMT589TA
Small Signal Bipolar Transistor, 0.001A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 30V 1A 500mW 3-Pin SOT-23 T/R
Trans, Pnp, 30V, 1A, 150Deg C, 0.5W Rohs Compliant: Yes |Diodes Inc. FMMT589TA
PNP medium power TX SOT23, FMMT589TA | Diodes Inc FMMT589TA
The three parts on the right have similar specifications to FMMT589TA.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishHTS CodeReach Compliance CodeJESD-30 CodeQualification StatusPolarityFrequency - TransitionCurrent - Collector (Ic) (Max)View Compare
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FMMT589TA15 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3yesActive1 (Unlimited)3EAR99HIGH RELIABILITYOther Transistors-30V500mWDUALGULL WING260-1A100MHz40FMMT58931Single500mWSWITCHING100MHzPNPPNP30V1A100 @ 500mA 2V100nA650mV @ 200mA, 2A30V100MHz-650mV30V50V5V-1A1.1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead Free---------
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--Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR99--100V625mWDUALGULL WING260900mA-40FMMT63431Single----NPN - Darlington960mV900mA20000 @ 100mA 5V100nA960mV @ 5mA, 1A100V---120V12V900mA1mm3.05mm1.4mm--RoHS CompliantLead FreeMATTE TIN8541.21.00.95unknownR-PDSO-G3Not QualifiedNPN140MHz-
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--Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mg--55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)---Other Transistors-12V625mW----2.5A--FMMT7173-Single--110MHzPNPPNP220mV2.5A300 @ 100mA 2V100nA220mV @ 50mA, 2.5A12V80MHz-180mV--12V5V-2.5A1mm3.05mm1.4mmNo SVHC-RoHS CompliantLead FreeMatte Tin (Sn) - annealed------2.5A
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15 Weeks-Surface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3yesActive1 (Unlimited)3EAR99--100V330mWDUALGULL WING260500mA40MHz40FMMT415-1Single330mWSWITCHING40MHz-NPN - Avalanche Mode100V500mA25 @ 10mA 10V100nA ICBO500mV @ 1mA, 10mA100V40MHz500mV100V320V6V500mA1.1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead FreeMatte Tin (Sn) - annealed----NPN--
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